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Characterization system for property measurement of intermediate infrared waveband semiconductor laser

An infrared band and measurement system technology is applied in the field of performance measurement and characterization of semiconductor lasers in the mid-infrared band. high precision effect

Inactive Publication Date: 2002-07-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

Although conventional semiconductor laser measurement systems have developed relatively maturely since the 1970s, and many commercial measurement systems have appeared, they are only suitable for lasers in the visible and near-infrared bands. The adjustment of the measurement band, drive capability and pulse parameters It is difficult to meet the test requirements of mid-infrared band semiconductor lasers that came out in the 1990s.

Method used

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  • Characterization system for property measurement of intermediate infrared waveband semiconductor laser
  • Characterization system for property measurement of intermediate infrared waveband semiconductor laser
  • Characterization system for property measurement of intermediate infrared waveband semiconductor laser

Examples

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Effect test

Embodiment 1

[0032] Example 1 Measurement of 2μm band AlGaAsSb / InGaAsSb multi-quantum well laser

[0033] 1. First place the laser chip on the microprobe test bench controlled by thermoelectric cooling, and directly add the driving current with the microprobe (in this embodiment, the laser is a ridge waveguide type, the waveguide width is 2.5 μm, and the cavity length is 700 μm) .

[0034] 2. Connect each hardware device according to the system block diagram. Inject liquid nitrogen into the InSb detector for cooling.

[0035] 3. Turn on the power of the computer, digital oscilloscope, pulse signal generator, FTIR spectrometer, lock-in amplifier, heat sink temperature controller and other equipment.

[0036] 4. Adjust the temperature of the heat sink to the required temperature (0-60°C in this embodiment, step by 10°C).

[0037] 5. Run the system control software on the computer to initialize the experimental conditions (that is, set the pulse width, period, measurement parameters of the...

Embodiment 2

[0041] 9, fixed drive condition (in the present embodiment, drive current is 200mA, and pulse width is 1 μ s, and cycle is 100KHz), and the lasing spectrum under each condition is recorded by FTIR spectrometer as follows image 3 . Example 2 Measurement of 8 μm band InAlAs / InGaAs / InP quantum cascade laser

[0042] 1. Install the packaged laser chip on the cold head of the helium compression cycle refrigerator, connect the drive line, seal the outer cavity and evacuate it, and start cooling.

[0043] 2. Connect each hardware device according to the system block diagram. Inject liquid nitrogen into the HgcdI detector for cooling.

[0044] 3. Turn on the power of the computer, digital oscilloscope, pulse signal generator, FTIR spectrometer, lock-in amplifier, heat sink temperature controller and other equipment.

[0045] 4. Adjust the temperature of the heat sink to the desired temperature (20-200K in steps of 30K in the embodiment).

[0046] 5. Run the system control softwar...

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Abstract

The present invention relates to a middle-infrared wave band semiconductor laser performance measurement characterization system, belonging to the field of semiconductor measuring and testing techniques, and is characterized by that its hardware portion is formed from 5 portions of Fourier transformer spectrograph and laser spectrum measuring system in which double-modulation technique is introduced, driving system based on wide-range pulse signal generator, measuring moniloring system based on digital oscilloscope current probe and middle-infrared detector, computer control system based on universal parallel interface card and heat sink refrigerator and temp. control system. The programming software of software portion is TESPOINT of CEC company, and adopts programming mode geared to object. It not only has the functions of measuring I-P and I-V characteristics of device and laser spectroscopic characteristics, but also can change driving pulse parameters in wide range to improve output characteristics of device and can make measurement and analysis of heat cahracteristics, and can make continuous measurement of the device.

Description

technical field [0001] The invention relates to a performance measurement and characterization technology of a mid-infrared band semiconductor laser. More precisely, the invention provides a solution for establishing a mid-infrared band semiconductor laser measurement system and related measurement technologies, which belong to the field of semiconductor testing technology. Background technique [0002] Antimonide mid-infrared multi-quantum well lasers (Multi-quantum-well laserdiodes, MQW-LD) in the 2 μm band and InP-based mid-infrared quantum cascade lasers (Quantum cascade lasers, QCL) in the 4 μm band came out in 1991 and 1994, respectively. After that, the QCL lasing wavelength was extended to 8.4 μm (1996), 11 μm (1996), and then appeared DFB structure QCL (1998), 3.4 μm strain compensation QCL (1998), 8 μm high power continuous operation QCL , antimonide QCL, etc. At present, the wavelength of InP-based QCL has been extended to 19 μm. The QCL wavelength of AlGaAs / GaA...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J3/28G01R31/26
Inventor 张永刚南矿军李爱珍
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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