Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Combining method for aluminium nitride and copper

An aluminum nitride and metallization technology, which is applied in the field of ceramic metallization, can solve the problems of reducing the performance of AlN substrates and low thermal conductivity, achieving enhanced thermal shock resistance and thermal stability, high bonding strength, and slowing down thermal stress Effect

Inactive Publication Date: 2002-08-21
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF2 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal conductivity of the oxide interlayer is very low, which greatly reduces the performance of the AlN substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1 Cu-Ag-Ti-Hf system (the main components of the alloy are Cu, Ag, Ti, Hf)

[0019] In proportion (wt%) Cu: 22%, Ag: 75%, Ti: 2.0%, Hf: 1.0%. These powders are uniformly mixed and placed in a slightly reducing atmosphere (a mixed gas of argon and hydrogen, the volume ratio is Ar:H 2 =95:2), solid-phase reaction at 600°C for 5 hours. After the reaction, the alloy powder with a particle size of about 2 μm is obtained by grinding.

[0020] The powder is dissolved in a solvent containing an organic polymer binder to obtain a coating slurry.

[0021] The AlN substrate and the Cu plate were cleaned with ethanol and put into an ultrasonic processor, ultrasonically treated with SiC particles with a particle size of 3 μm for about 2 minutes, taken out and cleaned with ethanol.

[0022] The coating slurry is uniformly coated on the ultrasonic-treated surface of the AlN ceramic substrate, and the coating thickness is about 10 μm.

[0023] Then cover the Cu plate whose surface ...

Embodiment 2

[0027] Example 2 Cu-Ag / Al-Ti / Hf system (the main components of the alloy are Cu, Ag, Al, Ti, Hf)

[0028] In proportion (wt%) Cu: 21%, Ag: 72%, Al: 3.0%, Ti: 3.0%, Hf: 1.0%.

[0029] After uniformly mixing the Ag and Al powders, the solid-phase reaction was carried out at 500° C. for 2 hours in a slightly reducing atmosphere (the conditions were the same as in Example 1). The powder after the reaction is evenly ground.

[0030] The Ag-Al alloy powder after the solid phase reaction was uniformly mixed with Cu, Ti, Hf powder and solid phase reacted in an argon (Ar) atmosphere at 600°C for 5 hours. The reacted alloy was then ground to obtain a particle size of 2μm. Around the powder.

[0031] Ion sputtering was performed on the AlN substrate.

[0032] The eutectic alloy powder is sprayed directly on the surface of the AlN ceramic substrate (the surface is ion-sputtered), and the thickness of the intermediate layer is about 15 μm.

[0033] Cover the Cu plate on the AlN substrate spray...

Embodiment 3

[0036] Example 3 Cu-Ag / Al-Ti-Ni / Co system (the main components of the alloy are Cu, Ag, Al, Ti, Ni, Co)

[0037] In proportion (wt%) Cu: 21%, Ag: 71%, Al: 3.0%, Ti: 3.0%, Ni: 1.0%, Co: 1.0%.

[0038] The Ag and Al powders were uniformly mixed and then solid-phase reacted in an argon (Ar) atmosphere at 500°C for 2 hours. The powder after the reaction is evenly ground.

[0039] The Ag-Al alloy powder after the solid phase reaction was uniformly mixed with Cu, Ti, Ni, Co powder, and then solid-phase reacted in an argon (Ar) atmosphere at 600°C for 5 hours. The reacted alloy was then ground to obtain particles Powder with a diameter of about 2μm.

[0040] The powder is dissolved in a solvent containing an organic polymer binder to obtain a coating slurry.

[0041] The coating slurry is uniformly coated on the surface of the AlN ceramic substrate, and the coating thickness is about 10 μm.

[0042] Then the Cu plate is covered on the substrate coated with the intermediate layer, the Cu ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Bending strengthaaaaaaaaaa
Login to View More

Abstract

The method of combining aluminium nitride and copper includes setting powder of eutectic alloy, which is obtained through solid pyhase reaction and contains non-oxygen compound of active metal, between AIN and CU and subsequent high temperature treatment. The eutective alloy has Ag, Cu and Ti as main components and one or several of Al, Ni Co, Zr, Hf and Mo, and the reaction temperature is 500-650 deg.c and reaction period of 1-6 hr. The ground alloy powder is painted or sprayed to AIN base board, Cu foil is then covered onto it, the combination of finally high temperature treated in vacuum Ar atmosphere or slight reduction atmosphere at 900-1200 deg.c temperature and 0-6 MPa pressure for 2-12 hr. The process can reduce the heat stress and ensure the high combination strength of AIN-Cu and excellent heat shock resistance.

Description

Technical field [0001] The present invention relates to a method for combining aluminum nitride and copper, and more specifically to a method and process for metallization of aluminum nitride (AlN) substrates. It belongs to the field of ceramic metallization. Background technique [0002] At present, the insulating substrate material used in electronic devices is mainly alumina (Al 2 O 3 ) Ceramic, Al 2 O 3 Ceramic has the advantages of high mechanical strength, good thermal stability, low price, etc., and Al 2 O 3 The direct bonding (welding) technology with the electrode material copper (Cu) is also relatively mature. But Al 2 O 3 The low thermal conductivity of only 15-20W / m·K hinders the further improvement of the heat dissipation speed of electronic components and cannot meet the requirements of high-performance electronic devices. In addition, in general heat transfer energy conversion devices (such as thermoelectric conversion devices), due to their low thermal conductivit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B41/52
CPCC04B41/009C04B41/52
Inventor 陈立东柏胜强
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com