Inductive coupling type plasma device

Abstract

An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.

Description

technical field [0001] The present invention relates to an inductively coupled plasma system used in chemical vapor deposition (CVD). Background technique [0002] The plasma treatment of semiconductor workpieces has the advantage of low treatment temperatures and high efficiency. Such as SiO 2 Deposition can be done using O 2 Plasma source and SiH 4 The gas is carried out at a temperature below 200° C. with a deposition rate of about 100-500 nm / min. However, in order to deposit large areas (up to 300 mm diameter wafers) with high coating uniformity, the plasma source must have a high throughput and form the plasma with a uniform flux. These requirements are met by several high density plasma sources (HDP) available in the art. [0003] Although historically HDPs were developed from electron cyclotron resonance (ECR) plasmas, most recent applications are based on radio frequency (RF) excited inductively coupled plasmas (ICP). The various ICP sources are simple in desig...

AI Technical Summary

Problems solved by technology

Positioning the sensors outside the chamber has certain disadvantages:

[0007] 1. It requires some huge, complex dielectric vacuum vessel for a helical inductor, or some large area dielectric orifice in the case of a flat spiral inductor

[0008] 2. An external sensor is not compatible with ultra high voltage (UHV) designs

[0009] 3. The ratio of the conductive portion of the chamber to a wafer susceptor is too small, although it is desirable to have a susceptor surface area much smaller than the ground surface area to achieve control of negative bias on a substrate without applying high RF energy Chance

[0010] 4. It is difficult to scale up the system

However, this treatment is not very effective if one of the precursors, i.e. the stable compound, has a low probability of sticking

Images