Preparation method of high performance lead zirconium titanate thin film

Abstract

A process for preparing the high-performance ferroelectric lead zirconate titanate (PZT) film includes preparing its precursor solution by sol-gel method, preparing the substrte with PZT crystal seed layer, atomizing and accelerating said precursor solution to deposit it on said substrate to become film, and heat treating. Its advantages are high growth speed, low cost, great thickness and excellent piezoelectric and dielectric performance.

Description

Technical field: [0001] The invention belongs to a preparation method of a ferroelectric functional ceramic material, in particular to a preparation method of a lead zirconate titanate ferroelectric thin film. Background technique: [0002] Lead zirconate titanate (molecular formula is Pb(Zr x Ti 1-x )O 3 , referred to as PZT), as a ferroelectric material with excellent performance, has been widely used in microelectronics technology, such as the manufacture of non-volatile dynamic random access memory (FRAM). In recent years, with the development of microsystem technology, the advantages of high piezoelectric constant and high dielectric constant of PZT are very suitable for making microsensors and microdrivers in microsystems, and are considered to be the most promising in the field of microsystems. One of the sensing and driving materials. The PZT ferroelectric thin film used in the production of micro-drivers should have excellent piezoelectric properties and a film ...

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Problems solved by technology

In the commonly used preparation methods of PZT ferroelectric thin films, the thin films prepared by the sol-gel method have excellent piezoelectric and dielectric properties, but during the heat treatment process of the wet film, due to the large shrinkage of the film volume, As a result, a large internal stress is generated inside the film and between the film and the substrate, resulting in a maximum non-cracking single-layer film thickness of only 0.1-0.2 microns, and when there are too many layers of the film, the heat treatment time will be too long, resulting in Pt The bottom electrode diffuses into the PZT, so it is difficult to obtain a PZT ferroelectric film with a thickness of more than 2 microns; other preparation methods, such as: magnetron sputtering, laser pulse deposition, hydrothermal method, chemical vapor deposition, etc., although PZT ferroelectric films with a thickness of more than 2 microns can be produced, but the equipment is complicated, the cost is high, and it is difficult to obtain excellent piezoelectric properties (poor preferred orientation)

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