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Preparation method of high performance lead zirconium titanate thin film

A lead zirconate titanate, high-performance technology, applied in the field of preparation of ferroelectric functional ceramic materials, can solve the problems of difficulty in obtaining piezoelectric properties, long heat treatment time, poor preferred orientation, etc., and achieve excellent film properties and high solution utilization. , Excellent piezoelectric effect

Inactive Publication Date: 2004-07-21
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the commonly used preparation methods of PZT ferroelectric thin films, the thin films prepared by the sol-gel method have excellent piezoelectric and dielectric properties, but during the heat treatment process of the wet film, due to the large shrinkage of the film volume, As a result, a large internal stress is generated inside the film and between the film and the substrate, resulting in a maximum non-cracking single-layer film thickness of only 0.1-0.2 microns, and when there are too many layers of the film, the heat treatment time will be too long, resulting in Pt The bottom electrode diffuses into the PZT, so it is difficult to obtain a PZT ferroelectric film with a thickness of more than 2 microns; other preparation methods, such as: magnetron sputtering, laser pulse deposition, hydrothermal method, chemical vapor deposition, etc., although PZT ferroelectric films with a thickness of more than 2 microns can be produced, but the equipment is complicated, the cost is high, and it is difficult to obtain excellent piezoelectric properties (poor preferred orientation)

Method used

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  • Preparation method of high performance lead zirconium titanate thin film
  • Preparation method of high performance lead zirconium titanate thin film
  • Preparation method of high performance lead zirconium titanate thin film

Examples

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Effect test

example 1

[0019] Anhydrous lead acetate is dissolved in acetic acid, and then zirconium propoxide and titanium isopropoxide are sequentially added according to the molar concentration ratio of lead, zirconium and titanium in the ratio of Pb:Zr:Ti=1:0.53:0.47. After stirring evenly with ultrasonic vibration, add a mixed solution of deionized water, acetic acid and isopropanol in a volume ratio of deionized water: acetic acid: isopropanol = 3:5:10. After being uniformly stirred by ultrasonic vibration, the solution was diluted to 0.4 mol / L with acetic acid and isopropanol. The prepared precursor solution was added to the electroatomization device, the flow rate was controlled at 0.6 ml / hour, the inner diameter of the atomization nozzle was 0.25 mm, the distance between the nozzle and the substrate was 5 cm, and a DC voltage of 4500 volts was applied. The substrate used is: SiO was prepared on a Si substrate according to the previous thermal oxidation method 2 film, sputtering method to p...

example 2

[0021] Other conditions are the same as Example 1, the control flow rate is 0.8 ml / hour, the inner diameter of the atomizing nozzle is 0.4 mm, the distance between the nozzle and the substrate is 6 cm, and a DC voltage of 4800 volts is added. The substrate temperature is set at 100°C, and the coating time is 20 minutes. For every 10 minutes of coating (about 1 micron thick), the substrate and film are placed in a resistance furnace and baked at 350°C for 40 minutes, and then baked at 600°C. Baking for 20 minutes, and then annealing the substrate and the film with the desired thickness in a PbO saturated atmosphere at 600°C for 4 hours to obtain a PZT iron with a thickness of 2 microns that is completely perovskite and strongly oriented along the (100) crystal direction. Electric film.

example 3

[0023] Other conditions are the same as Example 1, the control flow rate is 1 ml / hour, the inner diameter of the atomizing nozzle is 0.6 mm, the distance between the nozzle and the substrate is 7 cm, and a DC voltage of 5500 volts is added. The substrate temperature is set at 350°C, and the coating time is 40 minutes, among which the substrate and film are placed in a resistance furnace for 20 minutes (about 2 microns thick) and baked at 600°C for 15 minutes, and then the substrate and The film with the desired thickness was annealed in a PbO saturated atmosphere at 600° C. for 2 hours to obtain a PZT ferroelectric film with a thickness of 4 microns that was completely perovskite and preferentially oriented along the (100) crystal direction.

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Abstract

A process for preparing the high-performance ferroelectric lead zirconate titanate (PZT) film includes preparing its precursor solution by sol-gel method, preparing the substrte with PZT crystal seed layer, atomizing and accelerating said precursor solution to deposit it on said substrate to become film, and heat treating. Its advantages are high growth speed, low cost, great thickness and excellent piezoelectric and dielectric performance.

Description

Technical field: [0001] The invention belongs to a preparation method of a ferroelectric functional ceramic material, in particular to a preparation method of a lead zirconate titanate ferroelectric thin film. Background technique: [0002] Lead zirconate titanate (molecular formula is Pb(Zr x Ti 1-x )O 3 , referred to as PZT), as a ferroelectric material with excellent performance, has been widely used in microelectronics technology, such as the manufacture of non-volatile dynamic random access memory (FRAM). In recent years, with the development of microsystem technology, the advantages of high piezoelectric constant and high dielectric constant of PZT are very suitable for making microsensors and microdrivers in microsystems, and are considered to be the most promising in the field of microsystems. One of the sensing and driving materials. The PZT ferroelectric thin film used in the production of micro-drivers should have excellent piezoelectric properties and a film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/49C04B35/491C04B35/622C04B41/81
Inventor 褚家如鲁健黄文浩
Owner UNIV OF SCI & TECH OF CHINA
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