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Glass passivating process of silicon semiconductor device

A glass passivation, silicon semiconductor technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as imperfect microstructure processing, and achieve reduced internal stress, high precision, and improved yield and reliability. Effect

Inactive Publication Date: 2005-03-23
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In connection with the above-mentioned glass passivation principle and function, it is not difficult for us to understand that an imperfect or defective glass passivation film will directly affect the passivation effect and the further processing of it by semiconductor back-end processes such as lithography

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Example 1: Glass passivation process for silicon switching diode

[0025] Chip size: table height 30μm-35μm

[0026] Mesa diameter Φ45μm-Φ50μm

[0027] Distance between adjacent dies 300μm

[0028] P + N - Junction depth 5μm-5.5μm

[0029] N - Layer thickness 24μm-25μm

[0030] N - N - Junction depth 100μm-120μm

[0031] Glass powder particle size ≤1μm, preferably ≤100nm

[0032] Process steps:

[0033] 1. Carry out strict chemical cleaning and drying of the silicon device chips on the corroded mesa.

[0034] 2. Using the knife coating method, uniformly coat the prepared ultrafine glass powder (particle diameter≤1μm, preferably≤100nm) on the surface of the silicon device.

[0035] 3. Dried under infrared light and sent to high temperature furnace.

[0036] 4. Under low vacuum (10-10 -1 Pa) Degas in the glass degassing temperature zone (470°C-550°C) for 10 minutes, and preform for 10 minutes in the glass softening temperature zone...

Embodiment 2

[0038] Embodiment 2: Glass passivation process for silicon varactor diode

[0039] Chip size: table height 8μm-10μm

[0040] Mesa diameter Φ105μm-Φ120μm

[0041] Distance between adjacent dies 300μm

[0042] P + N - Junction depth 0.6μm-0.8μm

[0043] N - Layer thickness 2μm-2.5μm

[0044] N - N - Junction depth 100μm-120μm

[0045] Glass powder particle size ≤1μm, preferably ≤100nm

[0046] Process steps:

[0047] 1. Carry out strict chemical cleaning and drying of the silicon device chips on the corroded mesa.

[0048] 2. Using the knife coating method, uniformly coat the prepared ultrafine glass powder (particle diameter≤1μm, preferably≤100nm) on the surface of the silicon device.

[0049] 3. Dried under infrared light and sent to high temperature furnace.

[0050] 4. Under low vacuum (10-10 -1 Pa) Degas in the glass degassing temperature zone (470°C-550°C) for 10 minutes, and preform for 10 minutes in the glass softening temperature...

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Abstract

The invention relates to the glassivation technique of silicon semiconductor device and its features lie in the following: a. make the oxides or corresponding hydroxides or carbonates to confect the passivation glass into the superfine powder with grain's diameter no more than 1mum and choose it as the raw / material; b. after high temperature calcinations, make the passivation glass into the superfine powder with its diameter no more than 1mum and choose it as the glass frit of the passivation device; c. heat it in the vacuum and at the pressure of between 10Pa and 10 to the power -1 Pa during the hot moulding of the glassivation. The invention can produce the glassivation film with uniformity, no microdefect, small internal stress, contact pane etching figures and high precision, reduces the high temperature reverse-leakage current of the glassivation devices and increases the yield and reliability.

Description

Technical field [0001] The invention belongs to the technical field of surface passivation of semiconductor devices, and is mainly applied to the surface passivation of silicon semiconductor devices. Background technique [0002] For high-voltage, high-power or unpackaged silicon semiconductor devices, glass passivation technology is often used in order to obtain high reliability. This is mainly determined by the following unique functions of glass passivation: [0003] Barrier effect: Compared with silicon dioxide film, glass passivation film has a dense structure, so it has stronger water resistance, moisture resistance and blocking the penetration of other impurity ions. [0004] Absorption effect: The glass in the molten state during the high-temperature passivation thermoforming process has a higher affinity and solid solubility for the metal impurities that settle on the silicon surface, so that it can fully absorb the contamination. [0005] Anti-radiation effect: Due to t...

Claims

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Application Information

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IPC IPC(8): H01L21/31
Inventor 林立强
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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