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Producing technology for non-rusting agent pattern and thickening material thereof and semiconductor device producing technology

A resist pattern and process technology, applied in the process field of manufacturing semiconductor devices, can solve problems such as not being developed

Inactive Publication Date: 2005-07-13
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Therefore, the current situation is that a light source capable of using an ArF excimer laser as an exposure device during patterning that can sufficiently thicken ArF that cannot be thickened by using a resist swelling agent used in RELACS technology has not yet been developed. Resist patterns, etc., and a technology that can easily form fine space patterns at low cost

Method used

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  • Producing technology for non-rusting agent pattern and thickening material thereof and semiconductor device producing technology
  • Producing technology for non-rusting agent pattern and thickening material thereof and semiconductor device producing technology
  • Producing technology for non-rusting agent pattern and thickening material thereof and semiconductor device producing technology

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0230] -Preparation of resist pattern thickening material-

[0231] The resist pattern thickening material A-I of the present invention having the composition shown in Table 1 was prepared. Note that in Table 1, the numerical units in parentheses are parts by mass. In the "Resin" column, "KW-3" is a polyvinyl acetal resin (manufactured by Sekisui Chemical Co., Ltd.). In the column of "phase transfer catalyst", "tetramethylammonium acetate", "tetrabutylammonium acetate" and "tetramethylammonium chloride" were obtained from Sigma-Aldrich Corporation. In the "crosslinking agent" column, "biurea" means tetramethoxymethyl glycoluril. In the "surfactant" column, "PC-6" is a nonionic surfactant (polynuclear phenol surfactant manufactured by Asahi Denka Co., Ltd.) and "TN-80" is a nonionic surfactant (manufactured by Asahi Denka Co., Ltd. Co., Ltd. primary alcohol ethoxylate surfactant). In addition, a mixed solution of pure water (deionized water) and isopropanol (the mass ratio ...

example 2

[0267] As shown in FIG. 9 , an interlayer insulating film 12 is formed on a silicon substrate 11 . As shown in FIG. 10, a titanium film 13 is formed on the interlayer insulating film 12 by a sputtering method. Secondly, if Figure 11 As shown in , a resist pattern 14 is formed. By using the resist pattern 14 as a mask, the titanium film 13 is patterned by reactive ion etching to thereby form the opening 15a. Subsequently, if Figure 12 As shown in , the resist pattern 14 is removed by reactive ion etching, and an opening 15b is formed in the interlayer insulating film 12 by using the titanium film 13 as a mask.

[0268] Secondly, the titanium film 13 is removed by a wet process, such as Figure 13 As shown in , a TiN film 16 is formed on the interlayer insulating film 12 by a sputtering method. Subsequently, Cu film 17 is grown on TiN film 16 by electrolytic plating. Next, as shown in FIG. 14, planarization is performed by CMP so that the barrier metal and the Cu film (f...

example 3

[0273] -Flash memory and its manufacturing process-

[0274] Example 3 is an example of the semiconductor device of the present invention and its manufacturing process using the resist pattern thickening material of the present invention. Note that in Example 3, the resist films 26, 27, 29, and 32 to be described below are resists thickened by the same process as in Examples 1 and 2 using the resist pattern thickening material of the present invention. membrane.

[0275] Figure 18 and 19 It is a top view (plan view) of a FLASH EPROM called a FLOTOX type or ETOX type. Notice Figures 20 to 2 8 is a schematic cross-sectional view for explaining an example of a process for manufacturing a FLASH EPROM. exist Figures 20 to 2 8, the illustration on the left is the memory cell portion (first element region), which is the gate lateral direction of the portion where the MOS transistor with the floating gate electrode is formed ( Figure 18 and 19 Schematic diagram of the cros...

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Abstract

The present invention provides a resist pattern thickening material capable of thickening a resist pattern and forming fine space patterns beyond the exposure limit of exposure used during patterning. The resist pattern thickening material includes a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, in which the resist pattern thickening material of the present invention is suitably utilized.

Description

[0001] Cross reference to related applications [0002] This application is based upon and claims the benefit of priority from earlier International Patent Application No. PCT / JP03 / 09867 filed August 4, 2003, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a resist pattern thickening material applied over a resist pattern to be thickened and capable of thickening the resist pattern to be thickened, and the resist pattern thickening material capable of forming fine spacer pattern, and exceeds the exposure limit of the light source of the existing exposure device (here, spacer pattern is defined as a hole, groove, groove or any other blank space formed by developing (removing) the resist). The present invention also relates to a process for forming a resist pattern and a process for manufacturing a semiconductor device, all of which use the resist pattern thickening material. Background technique [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/32G03F7/00G03F7/40G11B5/17G11B5/31H01L21/027H01L21/033H01L21/311H01L21/3213H01L21/8247H01L27/115
CPCG03F7/0035G03F7/40G11B5/17G11B5/313G11B5/3163H01L21/0273H01L21/0337H01L21/0338H01L21/31144H01L21/32139Y10S430/106Y10S430/114H10B69/00H10B41/30H10B41/40H10B41/48H01L21/0332H01L21/0334
Inventor 野崎耕司小泽美和
Owner FUJITSU LTD
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