Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
A technology of nitride semiconductors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, chemical instruments and methods, etc., can solve problems such as the orientation deviation of nitride semiconductor crystals, and achieve the effect of improving characteristics
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reference example 1
[0036] Even GaN substrates with a small X-ray diffraction half-amplitude on {0002} symmetrical diffraction planes have low luminous luminance of light-emitting diodes (LEDs) using them. substrate formation figure 2 LEDs shown.
[0037] The manufacturing method of the GaN self-supporting substrate of each sample is as follows. After forming a GaN buffer layer and a GaN layer on a 2-inch-diameter sapphire substrate, the sapphire substrate and GaN buffer layer were removed. Both surfaces of the obtained GaN substrate were polished to produce a GaN self-supporting substrate with a thickness of 270 μm. Manufacturing conditions such as heating temperature were changed for each sample to form a GaN buffer layer and a GaN layer.
[0038] The structure of the LED formed on each GaN self-supporting substrate is the same as in Example 8 below. Table 1 shows the relationship between the X-ray diffraction half-width of the {0002} plane of the GaN self-supporting substrates of Samples ...
Embodiment 1
[0042] In the tubular reaction vessel made of quartz provided with a halogen gas supply pipe and a N source supply pipe, a quartz boat containing Ga metal is provided at a position close to the halogen gas supply pipe, and at a position away from the quartz boat and close to For the position of the N source supply pipe, the sapphire base substrate 1 with a diameter of 2 inches perpendicular to the reaction pipe is fixedly arranged on the support.
[0043] While heating the quartz boat containing Ga metal to 900°C, heat the sapphire base substrate 1 to 510°C. In this state, the carrier gas hydrogen and HCl gas are introduced into the tubular reaction vessel from the halogen gas tube, and the tube is supplied from the N source. Supply nitrogen and ammonia as carrier gases. HCl gas reacts with Ga to form GaCl. According to GaCl and NH 3 reaction, a buffer layer made of GaN was grown with a film thickness of 30 nm on the sapphire underlying substrate 1 .
[0044] Raise the temp...
Embodiment 2
[0054] A GaN self-supporting substrate was produced in the same manner as in Example 1 except that a GaAs underlying substrate was used instead of a sapphire underlying substrate. The X-ray diffraction half-amplitudes of the {20-24} plane and the {11-24} plane of GaN are 322 seconds and 336 seconds, respectively, and it is confirmed that although it is slightly inferior to Example 1, it has relatively good crystallinity.
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