Methd for preparing monocrystalline silicon nano membrane for nano photon technique

A nano-photon and nano-membrane technology, which is applied in the field of preparation of single-crystal silicon nano-membranes, can solve problems such as the inability to ensure optical isolation, and achieve the effect of high thickness uniformity

Inactive Publication Date: 2005-12-21
ZHEJIANG UNIV
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although silicon-on-insulator materials based on Smart Cut technology can be used in the research of silicon nanophotonic devices to a certain extent, the limited thickness of the oxide isolation layer in silicon-on-insulator materials limits the size of silicon nanowires. When the silicon layer is extremely thin, the optical isolation effect cannot be guaranteed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1: A silicon-on-insulator wafer with a 200 nm thick top layer of silicon is used, and a silicon wafer with a 15 μm thick silicon dioxide layer is used as a substrate, which is cleaned and dried after conventional cleaning. Stack the top layer silicon of the silicon-on-insulator wafer and the silicon dioxide layer of the silicon wafer facing each other, place them on a bonding machine for thermal bonding, and the bonding temperature is between 800°C. After bonding, put the bonded chips into a 40% potassium hydroxide solution for wet etching to etch the underlying silicon of the silicon chip on the insulator. The chip is further put into a hydrofluoric acid solution for wet etching to remove the oxide isolation layer of the silicon chip on the insulator. Finally, a silicon nano-film material with a silicon substrate, an optical isolation layer with a thickness of 15 μm of silicon dioxide, and a silicon film of about 200 nm can be prepared.

Embodiment 2

[0022] Embodiment 2: A silicon-on-insulator wafer with 100nm top layer of silicon is used, and a glass wafer is used as the substrate, which is cleaned and dried after conventional cleaning. Stack the top layer of silicon on the silicon-on-insulator wafer and the polished surface of the glass wafer, and place them on an electrostatic bonding machine for electrostatic bonding. The bonding temperature is between 300°C and the bonding voltage is 900 volts. After bonding, the silicon-on-insulator (SOI) side of the bonded wafers is placed upwards, placed in a dry etching device, and the underlying silicon of the silicon-on-insulator wafers is etched away by dry etching. Thus, a silicon nano-membrane material with a silicon film of about 100 nm is prepared, which uses glass as a substrate, and has a silicon dioxide layer as an upper limiting layer on the top layer.

Embodiment 3

[0023] Embodiment 3: A silicon-on-insulator wafer with a 50nm top layer of silicon is used, and the silicon wafer is used as the substrate, and is dried after conventional cleaning. First grow a silicon nitride layer with a thickness of 15 μm on the silicon-on-insulator wafer, then stack the grown silicon-on-insulator wafer and the polished surface of the silicon wafer opposite each other, and place them on a bonding machine for thermal bonding. The bonding temperature is 900°C between. After bonding, use a combined method to first grind and polish the silicon side of the bonded sheet insulator. When the thickness of the silicon layer is 50-100 μm, put it into a 40% concentration of potassium hydroxide solution for wet etching to etch away The underlying silicon of a silicon-on-insulator wafer. Thus, a silicon nano-membrane material with silicon as the substrate, an optical isolation layer with a thickness of 15 μm silicon nitride layer, a silicon dioxide layer as the upper l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a production technique of single crystal silicon nano film for nanometer photon technology. After clean and bake the insulator upper silicon plate of thickness of several to hundreds nanometer, joint the basal plate with one side of top layer silicon while removing the bottom silicon layer, acquiring single crystal silicon nano film. Single crystal silicon nano film produced with above technique has various thickness from several to hundreds nanometer, with a highly uniform thickness. There is enough thickness for light insulation on the lower light restrain layer and it is available for nano silicon photon device develop. According to actual needs the joint face of the silicon plate can take pre-process such as electrode placing or specified figure drawing.

Description

technical field [0001] The invention relates to a preparation method of nanometer materials, in particular to a preparation method of a single crystal silicon nanofilm used in nanophoton technology. Background technique [0002] Nanophotonic technology based on silicon materials is an important technical means to realize high-density photonic integration and high-speed optical interconnection. The preparation of silicon nanophotonic materials is the basis for silicon nanophotonic technology research. The basic idea of ​​preparing silicon nanophotonic materials includes bottom-up method and top-down method. The bottom-up method mainly uses the method of chemical growth to prepare silicon-based nanophotonic materials including silicon nanowires, silicon nanobelts and silicon nanotubes. Although this is an important development direction, at present, from nanophotonics From the perspective of technical requirements, these silicon nanophotonic materials are far from being able...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06
Inventor 杨建义李广波肖思淼李宇波江晓清王明华
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap