La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method

A lanthanum manganate thin film and epitaxial growth technology is applied in the field of epitaxial growth heterojunction thin film materials, and can solve the problems of doping lanthanum manganate epitaxial growth and the like
CN1722390AInactive Publication Date: 2006-01-18INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2006-01-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

This invention relates to a material with manganic acid lanthanum film and heterojunction on the silicon sheet and its preparing method. The material comprises a layer of P type doping manganic acid lanthanum La1-xAxMnO3 film on the n type silicon sheet to form p-n heterojunction material; wherein, A is Ca, Sr, Ba, Pb or Sn, any x ranges from 0.05 to 0.5; or a layer of n type doping manganic acid lanthanum La1-xBxMnO3 film on the p type silicon sheet to form p-n type heterojunction, wherein, B is Ce, Pr, Te, Nb, Sb or Ta, any x ranges from 0.05 to 0.5. The preparing method adopts two steps: epitaxial growing the manganic acid lanthanum or doped manganic acid lanthanum material on the silicon bulk, or used as breaker, then, epitaxial grow other perovskite oxide compound film, or multiple films.
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Description

technical field

[0001] The invention relates to an epitaxial growth heterojunction thin film material, in particular to an epitaxial growth doped lanthanum manganate thin film and heterojunction material on a silicon chip and a preparation method. Background technique

[0002] Doped lanthanum manganate (LaMnO 3 ) is a functional material with giant magnetoresistance properties, as document 1: Ken-ichi Chahara, Toshiyuki Ohno, Masahiro Kafai and Yuzoo Kozono, Appl.Phys.Lett.63, 1990 (1993); and document 2: S .Jin, T.H.Tiefel, M.McCormack, R.A.Fastnacht, R.Ramesh, and L.H.Chen, Science 264, 423 (1994)). The material has a wide range of applications in magnetic heads, magnetic storage, sensors and magnetic control, such as literature 3: M.Rajeswari, A.Goyal, A.K.Raychaudhuri, M.C.Robson, G.C.Xiong, C.Kwon, R.Ramesh, R.L.Greene and T. Venkatesan, Appl. Phys. Lett. 69, 851 (1996). For example, Chinese Patent No.: ZL 98101982.X discloses a material with a giant magnetoresistive...

Claims

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