La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method

A lanthanum manganate thin film and epitaxial growth technology is applied in the field of epitaxial growth heterojunction thin film materials, and can solve the problems of doping lanthanum manganate epitaxial growth and the like

Inactive Publication Date: 2006-01-18
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the giant magnetoresistance materials introduced in the literature have not directly epitaxially grown doped lanthanum manganate on silicon (Si) substrates.

Method used

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  • La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method
  • La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method
  • La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Use conventional laser molecular beam epitaxy equipment to epitaxially grow 500nm thick La on n-type silicon wafers 0.7 Sr 0.3 MnO 3 film.

[0043] The La 0.7 Sr 0.3 MnO 3 The film itself is a magnetic functional material with magnetoresistance properties, and the La 0.7 Sr 0.3 MnO 3 The heterojunction composed of / Si is a p-n thin film heterojunction material with good magnetic function characteristics.

[0044] La in this example 0.7 Sr 0.3 MnO 3 The specific preparation process of thin film heterojunction materials is:

[0045] 1. Choose a no-clean 2-inch single-side polished n-type single crystal Si substrate;

[0046] 2. Use high-temperature sintered p-type La 0.7 Sr 0.3 MnO 3 target;

[0047] 3. After rinsing in 1% hydrofluoric acid washing solution for 10 seconds, directly put the silicon wafer into the epitaxial chamber;

[0048] 4. Vacuum the epitaxial chamber to 2×10 -5 Pa, using an excimer laser with an output energy of 250 mJ, sputtering ~5...

Embodiment 2

[0053] The La of 800nm ​​is prepared by the method for embodiment 1 0.8 Sr 0.2 MnO 3 Film and La 0.8 Sr 0.2 MnO 3 / Si p-p junction thin film heterojunction materials.

[0054] Use p-type silicon wafers as substrates, and use p-type high-temperature sintered La 0.8 Sr 0.2 MnO 3 Target, other conditions are the same as in Example 1, the different conditions: 3 × 10 people in the epitaxial chamber during epitaxial growth -1 Pa reactive oxygen species to prepare 800nm ​​La 0.8 Sr 0.2 MnO 3 Film and La 0.8 Sr 0.2 MnO 3 / Si p-p thin film heterojunction materials.

[0055] figure 2 For the epitaxial growth of 400nm thick La on p-type Si substrate 0.8 Sr 0.2 MnO 3 RHEED diffraction fringes of the film. Sharp and clear RHEED diffraction fringes, illustrating the epitaxially grown La on p-type Si substrate 0.8 Sr 0.2 MnO 3 The film not only has good crystallinity, but also has a smooth surface.

Embodiment 3

[0057] According to the method of embodiment 1, the preparation takes n-type single crystal Si as the substrate, and the La after epitaxial growth 800nm 0.9 Ca 0.1 MnO 3Film and La 0.9 Ca 0.1 MnO 3 / Si p-n heterojunction materials.

[0058] with p-type La 0.9 Ca 0.1 MnO 3 Target material, pass people 3×10 in the epitaxial chamber during epitaxial growth -1 Pa reactive oxygen species to prepare 800nm ​​La 0.9 Ca 0.1 MnO 3 Film and La 0.9 Ca 0.1 MnO 3 / Si p-n junction.

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Abstract

This invention relates to a material with manganic acid lanthanum film and heterojunction on the silicon sheet and its preparing method. The material comprises a layer of P type doping manganic acid lanthanum La1-xAxMnO3 film on the n type silicon sheet to form p-n heterojunction material; wherein, A is Ca, Sr, Ba, Pb or Sn, any x ranges from 0.05 to 0.5; or a layer of n type doping manganic acid lanthanum La1-xBxMnO3 film on the p type silicon sheet to form p-n type heterojunction, wherein, B is Ce, Pr, Te, Nb, Sb or Ta, any x ranges from 0.05 to 0.5. The preparing method adopts two steps: epitaxial growing the manganic acid lanthanum or doped manganic acid lanthanum material on the silicon bulk, or used as breaker, then, epitaxial grow other perovskite oxide compound film, or multiple films.

Description

technical field [0001] The invention relates to an epitaxial growth heterojunction thin film material, in particular to an epitaxial growth doped lanthanum manganate thin film and heterojunction material on a silicon chip and a preparation method. Background technique [0002] Doped lanthanum manganate (LaMnO 3 ) is a functional material with giant magnetoresistance properties, as document 1: Ken-ichi Chahara, Toshiyuki Ohno, Masahiro Kafai and Yuzoo Kozono, Appl.Phys.Lett.63, 1990 (1993); and document 2: S .Jin, T.H.Tiefel, M.McCormack, R.A.Fastnacht, R.Ramesh, and L.H.Chen, Science 264, 423 (1994)). The material has a wide range of applications in magnetic heads, magnetic storage, sensors and magnetic control, such as literature 3: M.Rajeswari, A.Goyal, A.K.Raychaudhuri, M.C.Robson, G.C.Xiong, C.Kwon, R.Ramesh, R.L.Greene and T. Venkatesan, Appl. Phys. Lett. 69, 851 (1996). For example, Chinese Patent No.: ZL 98101982.X discloses a material with a giant magnetoresistive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/36H01L29/82H01L29/12H01L43/00
Inventor 吕惠宾何萌黄延红相文峰陈正豪周岳亮程波林金奎娟杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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