Integration manufacturing method of cantilever beam type dot needle-point based on silicon oxide film

Abstract

A integration Manufacturing method for cantilever beam type spot needlepoint base on silica dioxide film. First growing a layer silica dioxide film by thermal oxidation on the surface of a double-faced mirror polish silicon basal body, then opening a liquid storage groove window on the oxidation film and forming a fluid passage anf forming a fine structure patterns of the cantilever beam and the needle point by two photo resist mask reaction ion etching art work, and then open a window for back etching monocrystalline silicon releasing the cantilever beam on the back side of the silicon in mask chemical etching, using KOH solution aeolotropism masking, getting rid of the silicon basal body under the cantilever beam, releasing the silica dioxide cantilever beam needle point which has been micro machine-shaping. The invention uses thermal oxidation thermal oxidation film replacing general monocrystalline silicon film as constructional material for making cantilever beam type spot needle point, and not only can improve the hydrophilicity of the needle point and the fluid channel, have no inner stress, but also get a convenience and highly effective integration manufacturing process flow.

Description

technical field [0001] The invention relates to a method for manufacturing a needle point required for sample preparation of a biochip, in particular to an integrated manufacturing method for a cantilever beam type sample point needle point based on a silicon dioxide film, which belongs to the field of microfabrication technology and is also a biochip technology category. Background technique [0002] The core of biochip manufacturing is lattice preparation technology. Affymetrix, which has registered the Genechip trademark, has a patented technology for photodeprotection in situ synthesis of biochips, making it a leader in this field, but this method also has low-level Due to problems such as high array cost and high synthesis error rate, its gene chips are currently mainly used in the field of scientific research, and other companies are more likely to use spotting methods to prepare gene chips. [0003] Generally speaking, the sample size of sample preparation is larger ...

AI Technical Summary

Problems solved by technology

Hydrophilicity can be increased by depositing silicon oxide, but the added film may significantly change the stress characteristics of the cantilever, resulting in stress bending of the cantilever after release, and this longer cantilever is sensitive to the internal stress of the film structure The degree is quite high, and a little internal stress can lead to a large amount of bending deformation. In this way, the consistency of the tip of the high-order array cantilever beam faces severe challenges, because the inconsistent position of the array tip will cause it to lose its use value.

[0009] In addition, the cost of SOI silicon wafers is much higher than that of ordinary silicon wafers. The complexity of the above structure determines that it can only use dry back etching to realize the back hollow release operation, so its processing and manufacturing costs are relatively high

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