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Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient

A nanoparticle and gas-phase synthesis technology, applied in the field of gas-phase synthesis of nanoparticle arrays, can solve the problems of inability to obtain nanoparticle diameter gradient distribution, high efficiency and low cost, etc., and achieve the effect of large compatibility

Inactive Publication Date: 2006-08-02
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, gradient distributions of nanoparticle diameters cannot be obtained
Therefore, for the large-scale preparation of nanoparticle arrays with one-dimensional gradient distribution of size and concentration at the micron to submicron scale, there is no general method with high efficiency and low cost.

Method used

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  • Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient
  • Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient
  • Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1. has the gas-phase synthesis method of the nanoparticle array of the gradient distribution of single size and number density, and its synthetic steps are as follows:

[0034] (1) Use mica flakes about 1 micron thick to press figure 2 The structure of (a) is used to make a blocking mask (11), the mask is 20mm wide, 20mm high, and the transmission window width is 3 microns, 3 microns apart from the bottom end of the mask, and the mask (11) is pressed image 3 The configuration is vertically placed close to the surface of the amorphous carbon film substrate (7), and fixed on the rotatable substrate holder, and then the substrate holder is sealed in a suitable position in the high vacuum deposition chamber (6);

[0035] (2) adopt magnetron plasma gas phase aggregation source to produce tin nanoparticles, in the condensation chamber (2) of liquid nitrogen cooling, produce high-density tin atoms by magnetron sputtering (8) under the argon gas pressure of 200Pa, ti...

Embodiment 2

[0040] Embodiment 2. has the gas-phase synthesis method of the nanoparticle array of size and number density gradient that repeats alternately, and its synthetic steps are as follows:

[0041] (1) Use a stainless steel sheet with a thickness of about 2 microns to press figure 2 The structure of (b) makes a blocking mask (11), the mask is 20mm wide and 20mm high, the width of each transmission window is 3 microns, the bottom transmission window is 3 microns from the bottom of the mask, and the repetition period of the transmission windows is 5 Micron, the mask (11) is pressed image 3 The configuration is vertically placed close to the surface of the substrate (7) of the monocrystalline silicon wafer, and fixed on the rotatable substrate holder, and then the substrate holder is sealed in an appropriate position in the high vacuum deposition chamber (6);

[0042] Steps (2), (3), (4), (5) are the same as in Example 1;

[0043] (6) control the nanoparticle beam current (5) afte...

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Abstract

The present invention obtains nanometer particle array with one-dimensional diameter and number density gradient through gas phase aggregation process to generate nanometer particle, adiabatic expansion to obtain nanometer particle beam, collimating with collimator to a high vacuum deposit chamber to form highly oriented nanometer particle beam, rotating the substrate seat to form a nanometer particle beam incoming angle of 10 deg to the substrate while maintaining the substrate and the blocking mask inside the shoot area of the nanometer particle beam, and controlling the deposition of the nanometer particle beam on the substrate for 30 sec. The method has high efficiency, low cost, simple technological process and other features, and can deposit the gradient nanometer particle array in decades of seconds under common technological parameter condition.

Description

1. Technical field [0001] The invention relates to a gas-phase synthesis of nanometer materials, in particular to a gas-phase synthesis method of a nanoparticle array with a one-dimensional gradient of diameter and number density. 2. Background technology [0002] So far, the synthesis technology still cannot control the nanoparticles ranging in size from a few nanometers to tens of nanometers. Although it is not uncommon to obtain nanoparticle arrays of uniform size through specific processes for specific materials, it is necessary to carefully select and obtain nanoparticles in a size range of several nanometers to tens of nanometers, which spans an order of magnitude. Controlled alignment remains a technical challenge. Some existing nanostructure preparation technologies based on exposure and etching, such as electron beam exposure or focused ion beam etching, can theoretically achieve this goal, but the cost is extremely high and the efficiency is very low. Can it be ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00C23C14/24
Inventor 韩民陈征许长辉杨玲宋凤麒贺龙兵
Owner NANJING UNIV
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