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193nm photoresist containing silicon coupling agent and its filming resin

A technology of film-forming resin and silicon coupling agent, which is applied in the field of deep ultraviolet positive chemically amplified photoresist composition, and can solve problems such as failure to expose properly

Inactive Publication Date: 2006-09-06
苏州市成技新材料开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its film-forming resin is completely different from the DUV photoresist film-forming resin based on poly-p-hydroxystyrene (PHS) for 248nm band exposure, because poly-p-hydroxystyrene (PHS) is used as the main body for 248nm light Resists and film-forming resins have strong absorption of light waves at the 193nm band, and cannot be exposed normally

Method used

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  • 193nm photoresist containing silicon coupling agent and its filming resin
  • 193nm photoresist containing silicon coupling agent and its filming resin
  • 193nm photoresist containing silicon coupling agent and its filming resin

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0239] A silicon-containing coupling agent-containing copolymer film-forming resin is prepared from the following comonomers and their contents under the condition of the existence of a free radical initiator, through heating and copolymerization. The chemical formula of the copolymer film-forming resin (not expressing the sequence structure) is as follows:

[0240]

[0241] Tert-Butyl 5-norbornene-2-carboxylate 24.0 grams;

[0242] Maleic anhydride (fresh steamed) 7.5g;

[0243] 22.4 grams of 5-norbornene-2-hydroxyethyl carboxylate;

[0244] 25.8 grams of 1-methylcyclopentyl methacrylate;

[0245] Propyl dimethoxybutyl silyl methacrylate 7.0 grams.

[0246] The preparation method is: in a 1000ml three-necked flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 24.0g of 5-norbornene-2-carboxylate tert-butyl ester, Malay Acid anhydride (fresh steamed) 7.5 g, 5-norbornene-2-hydroxyethyl carboxylate 22.4 g, ...

Embodiment 2

[0248] A silicon-containing coupling agent-containing copolymer film-forming resin is prepared from the following comonomers and their contents under the condition of the existence of a free radical initiator, through heating and copolymerization. The chemical formula of the copolymer film-forming resin (not expressing the sequence structure) is as follows:

[0249]

[0250] Tert-Butyl 5-norbornene-2-carboxylate 38.2 g;

[0251] Maleic anhydride (fresh steamed) 9.8g;

[0252] 32.6 grams of 1-methylcyclohexyl methacrylate;

[0253] Methylene bis(ethyldimethoxyhydroxysilane) methacrylate 7.6 g.

[0254] The preparation method is: in a 1000ml three-necked flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 38.2 g of tert-butyl 5-norbornene-2-carboxylate, Malay Acid anhydride (fresh steamed) 9.8g, methacrylic acid-1-methylcyclohexyl 32.6g, methacrylic acid methylenebis(ethyldimethoxyhydroxysilane) 7.6g, tetr...

Embodiment 3

[0256] A silicon-containing coupling agent-containing copolymer film-forming resin is prepared from the following comonomers and their contents under the condition of the existence of a free radical initiator, through heating and copolymerization. The chemical formula of the copolymer film-forming resin (not expressing the sequence structure) is as follows:

[0257]

[0258] Tert-Butyl 5-norbornene-2-carboxylate 28.7 g;

[0259] 5-Norbornene-2,3-acid anhydride (Nadic Anhydride) 20.3 grams;

[0260] 28.4 grams of tert-butyl methacrylate;

[0261] Propyl tributoxy silane methacrylate 8.7 grams.

[0262] The preparation method is: in a 1000ml three-necked flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 28.7 g of 5-norbornene-2-carboxylate tert-butyl ester, 5- Norbornene-2,3-acid anhydride (Nadic Anhydride) (fresh steamed) 20.3 g, tert-butyl methacrylate 28.4 g, propyl tributoxysilane methacrylate 8.7 g,...

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Abstract

Wherein, it selects the copolymer with silicon-contained acrylic ester and acrylic ester or naphthenic hydrocarbon. This invention improves photoresist adherence and anti-drying etching performance, increases the resolvability by Si-OR group, and enhances the contrast of exposure area and non-exposure area to obtain more clear photo-etching figure.

Description

Technical field [0001] The present invention relates to a copolymer film-forming resin containing a silicon coupling agent (also known as "film-forming agent") and a deep-ultraviolet light source prepared by using this film-forming resin to use ArF laser (193nm) as the exposure light source (DUV) Positive-tone chemically amplified photoresist composition. Background technique [0002] Photoresist is a key functional material for the photolithography process in the large-scale integrated circuit industry. Among them, the film-forming resin is an important part of the photoresist, and its chemical and physical properties directly affect the use effect of the photoresist in the large-scale integrated circuit industry. According to different processes, photoresists are divided into two categories: positive photoresist and negative photoresist. The so-called positive photoresist refers to the photoresist film in the photolithography process, the exposed part of the pattern is finally ...

Claims

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Application Information

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IPC IPC(8): G03F7/027G03F7/004
Inventor 冉瑞成沈吉孙小侠
Owner 苏州市成技新材料开发有限公司
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