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Method of preparing Ti ceramic nano membrane on medical stainless steel

A technology of stainless steel and nano-membrane, applied in ion implantation plating, metal material coating process, coating, etc., can solve problems such as insufficient wear resistance, poor adhesion between the film and the base material, and insufficient corrosion resistance , to achieve the effect of uniform and dense film and good surface morphology

Inactive Publication Date: 2006-09-20
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problems that limit its clinical application are that the surface hardness is not high enough (generally 3.0GPa), the wear resistance is not good enough, and the corrosion resistance is not strong enough (the potential of the passivation zone is about 600mV), and the corrosion resistance after it is implanted into the human body question is a key question
However, the adhesion between the film and the base material is poor (the delamination critical load is <5.0N), and the smoothness of the polycrystalline surface of the film itself is not good enough, so the compactness is not good enough, which is the main obstacle to realize its application.

Method used

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  • Method of preparing Ti ceramic nano membrane on medical stainless steel
  • Method of preparing Ti ceramic nano membrane on medical stainless steel
  • Method of preparing Ti ceramic nano membrane on medical stainless steel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] Embodiment 1: The specific steps are: before deposition, put the polished and cleaned 317L stainless steel on the water-cooled rotatable sample stage of IBAD equipment, after vacuuming, first use 1keV nitrogen ion beam to carry out sputter cleaning for 15 minutes, and then use Ar at 3keV, 80mA + While ion sputtering the Ti target, bombard it with high energy 20keV, beam current 6mA for 10 minutes, and then use low energy 50eV, beam current 10mA N + Ion beam assisted deposition, the sample stage keeps rotating during the deposition process to improve the uniformity of film formation. In the experiment, the background vacuum is better than 1×10 -3 Pa, nitrogen partial pressure is 8×10 when working -3 Pa, the film forming time is 60 minutes, and the film thickness is about 600nm.

Embodiment 2

[0062] Embodiment 2: The specific steps are: before deposition, put the polished and cleaned 317L stainless steel on the water-cooled rotatable sample stage of IBAD equipment, after vacuuming, first use 1keV nitrogen ion beam to carry out sputter cleaning for 15 minutes, and then use Ar at 3keV, 80mA + While ion sputtering the Ti target, bombard it with high energy 10KeV, beam current 6mA for 15 minutes, and then use low energy 250eV, beam current 20mA N + Ion beam assisted deposition, the sample stage keeps rotating during the deposition process to improve the uniformity of film formation. In the experiment, the background vacuum is better than 1×10 -3 Pa, nitrogen partial pressure is 8×10 when working -3 Pa, the film forming time is 120 minutes, and the film thickness is about 900nm.

Embodiment 3

[0063] Embodiment 3: The specific steps are: before deposition, put the polished and cleaned 317L stainless steel on the water-cooled rotatable sample stage of IBAD equipment, after vacuuming, first use 1keV nitrogen ion beam to carry out sputter cleaning for 15 minutes, and then use Ar at 3keV, 80mA + While ion sputtering the Ti target, first bombard it with high energy 40KeV, beam current 6mA for 20 minutes, and then use low energy 350eV, beam current 30mA N + Ion beam assisted deposition, the sample stage keeps rotating during the deposition process to improve the uniformity of film formation. In the experiment, the background vacuum is better than 1×10 -3 Pa, nitrogen partial pressure is 8×10 when working -3 Pa, the film forming time is 180 minutes, and the film thickness is about 1200nm.

[0064] The process of preparing TiN thin film is: using Ar + While sputtering Ti target with ions, high-energy and low-energy N + The ion beam is used for bombardment, and the samp...

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Abstract

This invention relates to a method for manufacturing titanium ceramic nanofilm on medical stainless steel substrate. The method comprises (1) polishing the medical stainless steel substrate, and placing the substrate on a water-cooling rotatablr sample holder of IBAD equipment, (2) evacuumizing, and sputtering substrate for 15 min by 1 keV nitrogen ion beam, and (3) applying a high-energy ion bombardment (4-60 keV, 2-10 mA) for 10-20 min and a low-energy ion bombardment (50-350 keV, 10-30 mA) for 60-180 min as an assisting deposition while sputtering the titanium target by argon ion beam (3 keV, 80 mA). During the deposition the sample holder keeps rotating, the background vacuum is better than 0.001 Pa, and partial pressure of nitrogen is 0.008 Pa. The obtained TiN nanofilm has such advantages of high hardness, good abrasion resistance and cell compatibility, thus can be used as a substitute for hard tissue to be implanted into human bodies.

Description

technical field [0001] The invention belongs to surface modification and optimization of medical metal materials, in particular to a method for preparing titanium ceramic nano-film on medical stainless steel. Background technique [0002] When the currently known biological materials are in long-term (or temporary) contact with the human body, the compatibility with the biological environment must be fully satisfied, which in turn mainly depends on the interaction between the surface of the material and the biological environment. Therefore, controlling and improving the surface properties of biomaterials is a key way to improve and promote the interaction between surfaces and organisms. Medical stainless steel, especially medical 317L stainless steel, is a brand of medical stainless steel developed in recent years with better clinical application effect. It has excellent load resistance, high strength and fatigue resistance, easy processing and low price. However, the prob...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06
Inventor 赵杰李立
Owner TIANJIN NORMAL UNIVERSITY
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