Heterojunction pn diode based on silicon nanoline and producing method thereof

A silicon nanowire and pn junction technology, applied in the fields of nanomaterials and electronic materials, can solve problems that have not been reported before, and achieve the effects of increasing the recombination probability, low forward turn-on voltage, and large specific surface area.
CN1889275AInactive Publication Date: 2007-01-03WUHAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
WUHAN UNIV
Publication Date
2007-01-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to a heterogenous pn junction diode based on silicon nano wire and preparation method. Said diode features that it is p- silicon nano wire / n- wide bandgap oxide heterogenous pn junction formed by depositing n-type wide bandgap oxide in vertical orientation grown p - type silicon nano wire array. Said diode preparation method is: using non - electrode metal electrochemical deposition method to etch forming p type silicon nano wire on p type silicon wafer, then using formed vertical arrangement p type silicon nano array as templet depositing n-type wide bandgap oxide, finally respectively sputtering metal electrode on p type silicon back and n-type zinc oxide surface, forming ohmic contact electrode through annealing alloying. Said method prepared p - Si / n wide bandgap oxide heterogenous pn junction diode fully utilizes nano structure possessed large specific surface area, increasing carrier recombination probability and having lower positive direction cut-in voltage and large forward current density.
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Description

technical field

[0001] The invention relates to a novel silicon nanowire-based heterogeneous pn junction diode and a preparation method thereof, belonging to the field of nanometer materials and also the field of electronic materials. Background technique

[0002] Existing pn junction diodes are usually planar pn junction diodes. It is reported that Peng Kuiqing and Zhu Jing's research group from the Department of Materials Science and Technology of Tsinghua University have grown a layer of n-type silicon on the upper part of the p-type silicon wafer by CVD to form a p-n junction structure, and made a p-n junction nanowire array. After analyzing the I-V curve of the p-n junction nanowire, it is found that the p-n junction nanowire has a rectifying effect unique to the p-n junction. The I-V curve of the p-n junction nanowire is tested by AFM. The nanowires are not cured, and no metal electrodes are used on the surface of the silicon nanowires. However, p-Si / n-wide bandgap ...

Claims

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