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Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices

A water-based dispersion and chemical-mechanical technology, applied in semiconductor/solid-state device manufacturing, grinding devices, chemical instruments and methods, etc., can solve problems such as insufficient performance and inability to obtain scratches on insulating films

Inactive Publication Date: 2007-02-28
JSR CORPORATIOON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when forming copper corrugated wiring, it is not possible to obtain a slurry with high stability while suppressing copper dishing, copper corrosion, and insulating film scratches
Therefore, the current status quo cannot sufficiently satisfy the performance required for next-generation LSIs

Method used

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  • Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices
  • Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices
  • Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0160] I. Preparation of water-based dispersion for chemical mechanical grinding

[0161] In a polyethylene bottle, put the water dispersion containing silica gel C25 for abrasive grains in turn, converted into silica equivalent to the amount of 0.5% by mass; for polyvinylpyrrolidone containing PVP K60 aqueous solution, converted The amount of polyvinylpyrrolidone is equivalent to 0.02% by mass; when alanine is used as a water-soluble complex compound generator, the amount is 0.3% by mass; when quinallic acid is used as an insoluble complex compound generator, 0.5% by mass Dosage; when used as a surfactant, potassium dodecylbenzene sulfonate is used in an amount of 0.1% by mass; when used as an oxidant, ammonium persulfate is used in an amount of 2% by mass. After adding potassium hydroxide to make the pH around 9, stir for 15 minutes. Next, ion-exchanged water was added so that the amount of all the constituent components reached 100% by mass, and then filtered with a filter with...

Embodiment 2~18 and comparative example 1~3

[0198] As described in Table 3 and Table 4, the type and amount of each component of the water-based dispersant for chemical mechanical polishing in Example 1 were changed. The others were the same as those in Example 1. The water-based dispersants for chemical mechanical polishing S2~S18 were prepared. And R1~R3. In order to make the pH of the aqueous dispersion approximately 9 as in Example 1, potassium hydroxide was added for adjustment. The pH values ​​in Table 3 and Table 4 are all measured values ​​after adding potassium hydroxide. The "-" in Table 3 means that the component in the corresponding column is not added. In addition, Examples 8-16 and 18 and Comparative Examples 2 and 3 used two kinds of particles in combination as abrasive particles. In Example 17, two water-soluble coordination compound generators were used in combination. In Example 18, two surfactants were used in combination. In Examples 8-15, 17 and 18 and Comparative Examples 2 and 3, two insoluble complex...

Embodiment 19

[0218] I. Tools for preparing water-based dispersions for chemical mechanical grinding

[0219] I-1. Preparation of liquid (I)

[0220] Put it in a bottle made of polyethylene material one by one, converted to silica equivalent to 0.6% by mass, as abrasive particles containing the above-mentioned prepared silica gel C15 water dispersion, and converted to silica equivalent to 0.4 A water dispersion containing silica gel C35 in the amount of mass%; an aqueous solution containing prepared PVP K95 as polyvinylpyrrolidone, equivalent to 0.06% by mass in terms of polyvinylpyrrolidone; propylene as a water-soluble complex compound generator The amount of acid 0.6% by mass; the amount of quinalic acid 0.6% by mass and the amount of quinolinic acid 0.4% by mass as a water-insoluble complex compound generator; and the amount of potassium dodecylbenzene sulfonate 0.2% by mass as a surfactant % And 0.2% by mass of the acetylene glycol surfactant (trade name Surfynol 465, manufactured by Air P...

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Abstract

An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.

Description

Technical field [0001] The present invention relates to a chemical mechanical polishing aqueous dispersion, a chemical mechanical polishing method, and a manufacturing method of a semiconductor device. In particular, it relates to an aqueous dispersion for chemical mechanical polishing of a metal film, a tool for preparing the aqueous dispersion, a chemical mechanical polishing method for a metal film, and a method for manufacturing a semiconductor device using corrugated wiring. Background technique [0002] Copper corrugated wiring with high-performance LSI is formed by chemical mechanical polishing (CMP). CMP mainly performs first polishing to remove copper and second polishing to remove unnecessary metals and insulating films. The first polishing is to polish the copper at 800 nm / min, without actually removing the metal barrier layers such as tantalum and titanium, and it is required to suppress the copper depression below 20 nm. When low-k materials are used as insulating fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/304B24B37/04
CPCB24B37/044C09G1/02H01L21/7684H01L21/3212H01L21/76835
Inventor 仕田裕贵竹村彰浩服部雅幸南幅学福岛大仓嶋延行山本进竖山佳邦矢野博之
Owner JSR CORPORATIOON