Positive resist composition suitable for lift-off technique and pattern forming method

Abstract

A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.

Description

[0001] 1. Field of the Invention[0002] This invention relates to a positive resist composition which lends itself to a lift-off technique.[0003] 2. Prior Art[0004] In the prior art, dry and wet etching processes are commonly used in forming conductor patterns such as aluminum electrodes on semiconductor substrates. The process is illustrated in FIG. 3 as comprising metal layer sputtering and resist-patterning to form a resist pattern 3 on a metallization layer 2 on a substrate 1. The exposed area of the metallization layer 2, that is, those metallization portions which are not covered with the resist pattern 3 are etched away. By treating the structure with a stripping solution, the resist pattern 3 is stripped off to leave a conductor pattern 2 on the substrate 1.[0005] The above-mentioned process, however, suffers from low processing precision and a problem associated with etching procedure where difficult-to-etch metals such as gold and tantalum are used as the metallization. To ...

AI Technical Summary

Benefits of technology

The composition enables the formation of reliable conductor patterns with high precision and heat resistance through a simple process, independent of light source wavelength, while maintaining low costs and ensuring effective resist stripping without residues, thus enhancing processing reliability and precision.

Problems solved by technology

The above-mentioned process, however, suffers from low processing precision and a problem associated with etching procedure where difficult-to-etch metals such as gold and tantalum are used as the metallization.

However, where patterns are formed by the lift-off technique using conventional positive resist compositions, the resist stripping step does not effectively take place and can leave resist residues, arising a problem of reliability.

Therefore, the lift-off technique often employs a step requiring complex, cumbersome operations, for example, a dual layer resist process and an image reversal resist process.

If a novolak resin is synthesized to a lower average molecular weight, the resulting resist layer is improved in resolution, but becomes poor in heat resistance and film retention.

As the light source of an aligner shifts from g-line to i-line, light is not easily transmitted by a resist layer containing a conventionally used benzophenone photosensitive agent.

However, in order that a resist material for the lift-off technique having higher resolution as well as satisfactory dimensional control, heat resistance, and film retention be accomplished by combining such measures, many additional steps are necessary in the resist preparation process and undesirably cause a cost increase.

With a percent esterification of less than 2.5 mol %, film retention is poor and a resist composition cannot be configured to a pattern and ceases to be useful.

A novolak resin with a percent esterification of more than 27 mol % is less soluble in solvents such as ethyl cellosolve acetate, and a resist composition can not be prepared therefrom.

With a weight average molecular weight of less than 200, a resist film becomes extremely poor in heat resistance.

If the amount of the dissolution promoter is more than 60 parts, the effect of inhibiting dissolution of unexposed areas in an alkaline developer would become insufficient, permitting the pattern to be dissolved away.

Baking temperatures above 130.degree. C. would render resist stripping difficult.

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