High-frequency semiconductor device

Inactive Publication Date: 2005-02-24
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0020] As in the configuration mentioned above, this configuration achieves an increase in the mounting density, an increase in device reliability such as in the mechanical resistance and in the

Problems solved by technology

However, with structures where semiconductor elements and chip components are simply mounted onto the ceramic multilayer substrate 2, as is the case with the conventional high-frequency semiconductor device described above, the desired reduction in the pa

Method used

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Examples

Experimental program
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first embodiment

[0031] First Embodiment

[0032]FIG. 1 is a cross-sectional view of a high-frequency semiconductor device according to Embodiment 1 of the present invention. FIG. 2 is a perspective view of the high-frequency semiconductor device of FIG. 1 seen from its rear side.

[0033] In FIG. 1, the numeral 1a denotes a gallium-arsenide power semiconductor element serving as a power amplifier, 1b denotes a gallium-arsenide semiconductor element serving as a switching element, and 1c denotes a silicon semiconductor element for circuit control. Numeral 2 denotes a non-shrinkage ceramic multilayer substrate, which incorporates in its inner layers printed resistors 8 and printed capacitors 9 formed by printing a paste material that includes metal, and which may be formed by baking at a low temperature. Numeral 3 denotes a chip component such as, for example, a chip capacitor for fine-tuning the high-frequency circuit constants. Numeral 5 denotes metal wires, and 10 denotes a composite resin material lay...

embodiment 2

[0046] Embodiment 2

[0047] Embodiment 2 of the present invention is described with reference to the cross-sectional view of the high-frequency semiconductor device shown in FIG. 3.

[0048] The device of FIG. 3 differs from that according to Embodiment 1 shown in FIG. 1 in that the gallium-arsenide power semiconductor element 1a, the gallium-arsenide semiconductor element 1b, and the silicon semiconductor element 1c are flip-chip connected on the circuit pattern on the bottom surface of the ceramic multilayer substrate 2 via bumps 13 having a metal core.

[0049] The bumps 13 are formed through SBB (stud ball bonding) using gold wire, and maintain a gap of approximately 40 μm between the semiconductor elements 1a, 1b, and 1c and the ceramic multilayer substrate 2. Other techniques that can be employed to provide the bumps 13 include a technique employing plating around a copper core material serving as the core and adhering with a conductive resin, a technique employing an ACF (anisotrop...

embodiment 3

[0052] Embodiment 3

[0053] Embodiment 3 of the invention is described in reference to the cross-sectional view of the high-frequency semiconductor device shown in FIG. 4 and the perspective view of the device of FIG. 4 seen from its rear side shown in FIG. 5.

[0054] The device of FIG. 4 differs from that according to Embodiment 2 shown in FIG. 3 in that interlayer connector via holes 21 are formed directly below the gallium-arsenide power semiconductor element 1a, which is a power amplifier, and a heat-release electrode 14 is formed on the bottom surface of the composite resin material layer 10 in alignment with the positions of the interlayer connector via holes 21. As shown in FIG. 5, a plurality of electrodes 4 for connecting to the outside and the heat release electrode 14, which has a larger area than the electrodes 4 for connecting to the outside, are formed on the bottom surface of the composite resin material layer 10. Accordingly, heat can be released effectively from the el...

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Abstract

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to structures for high-frequency semiconductor devices on which high-frequency semiconductor elements, control integrated circuit elements, and surrounding circuits are mounted, and in particular to packaging structures thereof. [0003] 2. Description of the Related Art [0004] There is an increasing demand for high-frequency semiconductor devices employed primarily in mobile communications equipment, such as portable telephones, as “all-in-one” RF modules with receiving and transmitting systems formed into a single unit. According to such situation, a need has arisen for a reduction in packaging size, under the condition that the number of semiconductor elements and chip components that are mounted increases due to the provision of high-frequency semiconductor elements, control integrated circuit elements and surrounding circuitry in order to incorporate receiving and transmitting system...

Claims

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Application Information

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IPC IPC(8): H01L23/29H01L23/31H01L23/538H01L23/66H01L25/04H01L25/18H05K1/03H05K1/11H05K1/18H05K3/28H05K3/46
CPCH01L23/3121H01L23/5389H01L2924/12041H01L2224/45144H01L2924/01019H01L24/48H05K3/4629H05K3/4614H05K3/284H01L23/66H01L2224/16225H01L2224/48091H01L2224/48227H01L2924/01057H01L2924/01078H01L2924/01079H01L2924/09701H01L2924/16152H01L2924/19041H01L2924/19105H01L2924/3011H01L2924/3025H05K1/0306H05K1/112H05K1/183H05K1/186H01L2924/00014H01L2924/00015H01L2924/00H01L2924/14H01L24/45H01L2924/181H01L2224/45015H01L2924/207
Inventor TAKEHARA, HIDEKIYOSHIKAWA, NORIYUKIKANAZAWA, KUNIHIKONAKATANI, SEIICHI
Owner PANASONIC CORP
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