Chemical mechanical polishing method and method of manufacturing semiconductor device

a technology of mechanical polishing and semiconductor devices, which is applied in the direction of manufacturing tools, lapping machines, other chemical processes, etc., can solve the problem of not being able to achieve the flatness of the first organic film b>9/b>, and achieve the effect of reducing the resistance of metal interconnects and wire-to-wire capacitance, reducing the number of steps, and increasing yield
US20070128874A1Inactive Publication Date: 2007-06-07JSR CORPORATIOON +1
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
JSR CORPORATIOON
Publication Date
2007-06-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.
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Description

[0001] Japanese Patent Application No. 2005-345790 filed on Nov. 30, 2005, is hereby incorporated by reference in its entirety. BACKGROUND OF THE INVENTION

[0002] The present invention relates to a chemical mechanical polishing method and a method of manufacturing a semiconductor device.

[0003] In the manufacturing process of semiconductor devices, a resist film is used to form a desired structure. The resist film is required to have a uniform thickness over the entire wafer. For example, a desired structure is obtained by forming a trench in a semiconductor substrate or a hole in an insulating film, applying a photoresist to form a resist film, and recessing or removing the resist film.

[0004] In this case, the resist film is required to have a uniform thickness over the entire wafer.

[0005] A variation in thickness of the resist film is increased during the subsequent recess step to cause the device shape to deteriorate. Moreover, a decrease in depth of focus or yield occurs. [000...

Claims

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