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Two-layer film and method of forming pattern with the same

a two-layer film and resist technology, applied in the field of photofabrication, can solve the problems of difficult to observe the resist pattern with a light microscope, difficult to control the resist pattern profile in general, and failure of hdd, so as to improve the productivity of workpieces, confirm the undercut profile, and release easily

Inactive Publication Date: 2007-10-25
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a two-layer laminate and a patterning method using it. The two-layer laminate includes a resist layer (I) made from a positive radiation-sensitive resin composition and a resist layer (II) made from a different composition. The patterning method involves forming a pattern in the laminate using UV light exposure or electron beam lithography, developing it to form an undercut resist pattern, and depositing or sputtering a thin layer on the patterned laminate. The resist layer (I) is made from a composition that is insoluble in water and soluble in alkaline aqueous solution, while the resist layer (II) is made from a composition that is soluble in the same solvent. The patterning method can be used to create patterns on a magnetic head slider or other substrates.

Problems solved by technology

The burrs on the DLC layers can scratch the magnetic recording disks of HDD (hard disk drive) or can be a foreign object to cause HDD failures.
However, this method in general has a difficult control of the resist pattern profile.
Further, it is difficult to observe the resist pattern with a light microscope and also to release the resist layer which has been hardened.
Because of this, it has been difficult to form a resist layer in uniform thickness.
Since these row bars have a gap between the neighboring ones, a direct application of a liquid resist is impossible; therefore, a resist film such as a dry film is generally employed instead.

Method used

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  • Two-layer film and method of forming pattern with the same
  • Two-layer film and method of forming pattern with the same
  • Two-layer film and method of forming pattern with the same

Examples

Experimental program
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examples

[0206] The present invention will be hereinafter described in detail by the following Examples, but it should be construed that the invention is in no way limited to those Examples Hereinafter, “parts” and “%” are by weight unless otherwise mentioned.

preparation examples

Preparation of Compositions 1 and 2

[0207] The following is a description of the components (A) to (H) that were used in the preparation of compositions (1-1) to (1-7) for lower layer production and compositions (2-1) to (2-2) for upper layer production.

(Synthesis of Radical Polymer A-1)

[0208] A flask equipped with a dry ice / methanol reflux condenser and a thermometer was purged with nitrogen. The flask was charged with a polymerization initiator: 3.0 g of 2,2′-azobisisobutyronitrile, and a solvent: 150 g of ethyl 2-hydroxypropionate. They were stirred together until the polymerization initiator dissolved in the solvent. Subsequently, 43 g of 4-isopropenylphenol (monomer I), 30.8 g of n-butyl acrylate (monomer III), 2.9 g of acrylic acid (monomer II) and 23.3 g of 2-hydroxyethyl crylate (monomer I) were introduced into the flask. The contents were stirred slowly to give a solution, which thereafter was heated to 70° C. Thus, polymerization was carried out at the temperature for 3 ...

example 1

Spin Coating / Spin Coating Process

[0268] The composition (1-1) was dropped on a silicon wafer and spin coated thereon. The resultant coating was baked on a hot plate at 100° C. for 10 minutes to give a resist layer (I) (under layer) Thereafter, the composition (2-1) was dropped and spin coated on the above-formed under layer. The coating was baked on a hot plate at 100° C. for 5 minutes to give a resist layer (II) (upper layer). A two-layer laminate was thus obtained.

[0269] After the lower and upper layers had been formed on the substrate, the top surface of the laminate was observed with a light microscope. The surface condition was evaluated as either A or B based on the following criteria. The results are set forth in Table 3. [0270] Application properties A: the layers were uniform overall on the substrate [0271] B: the layers had released partially and had holes, i.e., the layers were not uniform overall on the substrate

[0272] The substrate having the layers evaluated above ...

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PUM

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Abstract

The invention concerns a lift-off process for patterning layers that are deposited and / or sputtered. The invention provides a two-layer resist and a patterning method using the resist. The patterning method can readily produce burr-free layers on a substrate. The method comprises the steps of: sequentially applying positive radiation-sensitive resin compositions 1 and 2 to form a two-layer laminate; subjecting the two-layer resist to single exposure and development to produce fine patterns having an undercut cross section; depositing and / or sputtering an organic or inorganic thin layer with use of the resist pattern as a mask; and lifting off the resist pattern to leave a pattern of the thin layer in desired shape.

Description

FIELD OF THE INVENTION [0001] The present invention relates to photofabrication, in other words precision microfabrication by photolithography technique. More particularly, the invention relates to a lift-off process using a two-layer resist. BACKGROUND OF THE INVENTION [0002] Lift-off is a general term for a process of forming a pattern of organic or inorganic thin layers by: [0003] applying a resist onto a workpiece surface; [0004] patterning the resist layer by a photolithography technique; [0005] depositing and / or sputtering an organic or inorganic substance over the resist layer and areas in which the resist has been cleared; and [0006] releasing the resist layer together with the overlying organic or inorganic thin layer. [0007] As a consequence, the organic or inorganic substance found in the orifices of the resist layer remains there to form a desired pattern. [0008] In this lift-off process, the resist pattern profile is very important. For example, positive resists will ty...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03C5/18G03F7/023G03F7/095G03F7/40
CPCG03F7/0233G03F7/40G03F7/095G03F7/0236G03F7/26
Inventor OHTA, MASARUITO, ATSUSHIMOCHIZUKI, ISAMUINOMATA, KATSUMIIWANAGA, SHIN-ICHIRO
Owner JSR CORPORATIOON
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