Sb-Te-Based Alloy Sintered Compact Sputtering Target

a technology of compact sputtering target and te-based alloy, which is applied in the direction of diaphragms, metallic material coating processes, and recording information storage, etc., can solve the problems of affecting the film affecting the quality and yield of the thin film as the recording medium, and affecting the quality of the sputtered film. , to achieve the effect of improving the uniformity of the sputtered film, preventing
US20120279857A1Inactive Publication Date: 2012-11-08JX NIPPON MINING& METALS CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
JX NIPPON MINING& METALS CORP
Publication Date
2012-11-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

Provided is an Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 μm or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 μm or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y / X is within the range of 0.1 to 0.5. The present invention aims to improve the structure of the Sb—Te-based alloy sputtering target, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing in the sputtering process.
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Description

TECHNICAL FIELD

[0001] The present invention relates to an Sb—Te-based alloy sintered compact sputtering target containing carbon or boron and capable of effectively inhibiting the generation of particles.BACKGROUND ART

[0002] In recent years, a thin film formed from an Sb—Te-based material is being used as a material for use in phase change recording; that is, as a medium for recording information by using phase transformation. As a method of forming this thin film formed from the Sb—Te-based alloy material, it is standard to use a means generally referred to as a physical vapor deposition method such as the vacuum deposition method or the sputtering method. In particular, the thin film is often formed using the magnetron sputtering method from the perspective of operability and film stability.

[0003] Formation of films by way of the sputtering method is performed by physically colliding positive ions such as Ar ions to a target disposed on a cathode, using that collision energy to disch...

Claims

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