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Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device

a technology of transfer pattern and mask, which is applied in the direction of photomechanical treatment, photomechanical apparatus, instruments, etc., can solve the problem that the resist pattern of the phase shift film to be formed in the mask cannot be directly applied to the light-semi-transmissive film, and achieves high accuracy, high accuracy, and high accuracy

Inactive Publication Date: 2020-05-14
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration allows for the formation of fine transfer patterns in the light-semitransmissive film with high accuracy, addressing the complexities of etching selectivity and optical density, and enabling the manufacture of semiconductor devices with precise patterns.

Problems solved by technology

However, when manufacturing a transfer mask from such a mask blank, the dry etching using as a mask a resist pattern having a transfer pattern to be formed in the phase shift film cannot be performed directly on the light-semitransmissive film.

Method used

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  • Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device
  • Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device
  • Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0136]The transparent substrate 1 was prepared, which had a main surface dimension of about 152 mm×about 152 mm and a thickness of about 6.35 mm, and was made of synthetic quartz glass. The transparent substrate 1 had been polished to have predetermined surface roughness (root mean square roughness Rq of 0.2 nm or less) in its end faces and main surfaces, and subjected to predetermined cleaning and drying processes.

[0137]Next, the transparent substrate 1 was placed in a single-wafer DC sputtering apparatus, a mixed target of molybdenum (Mo) and silicon (Si) (Mo:Si=12 atom %: 88 atom %) was used, and the reactive sputtering (DC sputtering) in a mixed gas atmosphere of argon (Ar), nitrogen (N2), and helium (He) was conducted, such that the light-semitransmissive film 2 made of molybdenum, silicon, and nitrogen (MoSiN film: Mo: 12 atom %, Si: 39 atom %, N: 49 atom %) and having a thickness of 69 nm was formed on the transparent substrate 1. The composition of the MoSiN film was obtaine...

example 2

[0151]The mask blank 100 of Example 2 was manufactured by a procedure similar to Example 1 except that the etching mask film 3 was made of CrSi. In particular, the transparent substrate 1 was placed in the single-wafer DC sputtering apparatus, a mixed target of chromium (Cr) and silicon (Si) (Cr:Si=97 atom %: 3 atom %) was used, and the sputtering (DC sputtering) in an argon (Ar) gas atmosphere was performed, such that the etching mask film 3 made of chromium and silicon (CrSi film) and having a thickness of 4 nm was formed in contact with the surface of the light-semitransmissive film 2.

[0152]In the etching mask film 3, the Si2p narrow spectrum obtained by X-ray photoelectron spectroscopy analysis had the maximum peak at the binding energy of not less than 98 eV and not more than 101 eV. Further, in the etching mask film 3, the respective maximum peaks of O1s and N1s narrow spectra obtained by X-ray photoelectron spectroscopy analysis were not more than the detection lower limit.

[M...

example 3

[0157]The transparent substrate 1 was prepared in a manner similar to Example 1. Then, the transparent substrate 1 was placed in the single-wafer DC sputtering apparatus, a chromium (Cr) target was used, and the reactive sputtering (DC sputtering) in the mixed gas atmosphere of argon (Ar) and methane (CH4) was performed, such that the etching mask film 13 made of chromium and carbon (CrC film: Cr: 95 atom %, C: 5 atom %) and having a thickness of 8 nm was formed in contact with the surface of the transparent substrate 1. The each film composition in the etching mask film 13 and the light shielding film 14 described below was obtained by electron spectroscopy for chemical analysis (ESCA: with RBS correction).

[0158]In the etching mask film 13, the C1s narrow spectrum obtained by the X-ray photoelectron spectroscopy analysis had the maximum peak at the binding energy of not less than 282 eV and not more than 284 eV. Further, in this etching mask film 13, the respective maximum peaks of...

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Abstract

A mask blank is provided which comprises a transparent substrate, an etching mask formed on the transparent substrate, and a light shielding film formed on the etching mask film. The mask blank may also include a light-semitransmissive film formed between the transparent substrate and the etching mask film. The etching mask film contains chromium and carbon, and the light shielding film contains chromium and oxygen. A C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. patent application Ser. No. 15 / 886,634, filed Aug. 25, 2017, the contents of which is incorporated herein by reference in its entirety and which is a National Stage application of International Application No. PCT / JP2015 / 085997, filed Dec. 24, 2015, the contents of which is incorporated herein by reference in its entirety and which claims priority to Japanese Patent Application No. 2015-055902, filed Mar. 19, 2015.TECHNICAL FIELD[0002]The present disclosure relates to a mask blank, a transfer mask, a method for manufacturing a transfer mask, and a method for manufacturing a semiconductor device.BACKGROUND ART[0003]In a manufacturing process of a semiconductor device, a fine pattern is generally formed using a photolithographic method. In the formation of the fine pattern, multiple substrates, which are referred to as transfer masks, are usually used. The transfer mask is formed by providing the f...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F1/32H01L21/308G03F7/20G03F1/78G03F1/80G03F1/54C23C14/06C23C14/14
CPCC23C14/0641G03F1/32G03F1/78H01L21/3086G03F1/54C23C14/0635G03F1/80C23C14/14C23C14/06H01L21/3081G03F7/2002H01L21/3065
Inventor NOZAWA, OSAMUSHISHIDO, HIROAKIOHKUBO, RYO
Owner HOYA CORP
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