Reactor surface passivation through chemical deactivation

a technology of passivation and reactor surface, which is applied in the direction of chemically reactive gases, vacuum evaporation coating, crystal growth process, etc., can solve the problems of destroying the self-limiting nature of deposition, film buildup can delaminate the reactor surface, and contaminating the substrate surfa

Active Publication Date: 2006-10-10
ASM IP HLDG BV
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Problems solved by technology

A shorter duration purge step can increase the available time for adsorption and reaction of the reactants within the reactor, but the vapor phase reactants are not allowed to mix to avoid the risk of CVD reactions destroying the self-limiting nature of the deposition.
The film buildup can delaminate from the reactor surfaces and contaminate the substrate surface.
Hence, this can also increase the pulse and ...

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  • Reactor surface passivation through chemical deactivation
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  • Reactor surface passivation through chemical deactivation

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Embodiment Construction

,” one will understand how the features of this invention provide several advantages to vapor deposition methods and systems.

[0010]According to one aspect of the invention, a method is provided for deactivating surfaces of a vapor deposition reaction space. The surfaces are treated to render the vapor deposition process conducted therein selective to the substrate, rather than the treated surfaces. In one embodiment, treatment comprises an ex situ treatment prior to assembly of the parts defining the reaction space. In another embodiment, treatment and periodic re-treatment can be conducted in situ by flowing a treatment gas through the reaction space to deactivate reaction space surfaces.

[0011]In accordance with another aspect of the invention, a vapor deposition reactor is provided with at least some of the surfaces that define a reaction space being deactivated by a monolayer that inhibits deposition reactions thereon. In the example of an atomic layer deposition (ALD) reactor, t...

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Abstract

Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

Description

REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit under 35 U.S.C. §119(e) to provisional patent application No. 60 / 469,181, filed May 9, 2003.FILED OF THE INVENTION[0002]The present invention generally relates to inhibiting deposition on reactor surfaces in chemical vapor deposition (CVD) and atomic layer deposition (ALD) reactors. More specifically, the present invention relates to de-activating a surface of the reactor to limit coating by subsequent gases flowing through the reactor.BACKGROUND OF THE INVENTION[0003]Atomic layer deposition (ALD) is a known process in the semiconductor industry for forming thin films of materials on substrates such as silicon wafers. ALD is a type of vapor deposition wherein a film is built up through self-saturating reactions performed in cycles. The thickness of the film is determined by the number of cycles performed. In an ALD process, gaseous precursors are supplied, alternatingly and repeatedly, to the substrat...

Claims

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Application Information

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IPC IPC(8): B05D7/22C23C16/40C23C16/44C23C16/455C23C22/68C30B25/14
CPCB82Y30/00C23C16/403C23C16/4404C23C16/45525C23C22/68C30B25/14H01J37/32477B05D1/36B05D1/60B05D2203/30B05D2518/12B05D3/104B05D3/044B05D1/185B05D3/0466H01L21/20
Inventor VERGHESE, MOHITHSHERO, ERIC J.
Owner ASM IP HLDG BV
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