A diamond film flat field emission cathode and method for making same

Abstract

The invention belongs to a diamond film planar field emission cathode applied to plate display and its making method. It includes: a substrate, where a measuring metal electrode is deposited on one surface of the substrate and a measuring lead wire is connected with them; there is a diamond film layer on the other surface of the substrate; a metal silicide transition layer is situated between the substrate and diamond film layer. Its making method includes: firstly making a metal silicide transition layer on one surface of the substrate; then adopting various traditional methods to grow a diamond film on the metal silicide, because it is difficult in directly growing diamond film on the metal silicide, normally nucleating at bias voltage and then growing the diamond film; adopting spurting or depositing process to deposit 300-1000 nm thick Au electrode on the other surface of the substrate. The metal silicide transition layer provides two interface barriers tunneled by electron resonance, thus realizing high-density electron injection. And the making method is easy to spread.

Description

technical field

[0001] The invention belongs to a field emission cathode, in particular to a metal silicide (such as CoSi 2 、TiSi 2 、FeSi 2 、TaSi 2 、MoSi 2 、WSi 2 、NiSi 2 etc.) a transition layer and a diamond thin film, a planar field emission cathode used in the field of flat panel display and a manufacturing method thereof. Background technique

[0002] The diamond film planar field emission cathode made in the prior art is made of doped or non-doped diamond film material, with metal or single crystal silicon as the substrate, a layer of diamond film is grown on it, and the measurement is set on the other side of the substrate. The electrode uses the excellent physical and chemical properties of the diamond film, such as wide bandgap and electronegativity, to make a field emission cathode, and realizes electron emission on the surface of the diamond film under the action of an external electric field. Among them, the diamond film planar cathode made on silicon is g...

Examples

Embodiment 1

[0034]The specific structure of the diamond film planar field emission cathode of this embodiment can be found in figure 2 A polished N-type (001) single crystal silicon wafer is used as the substrate 2, and a layer of 50nm-thick metal silicide CoSi is grown on one side of the substrate 2 by the molecular beam epitaxy method. 2 4. The growth conditions are: use gas containing Si and Co as the source, and the gas pressure is 5×10 -9 Torr, the substrate temperature is 500 degrees, and the growth time is 8 minutes. at CoSi 2 A diamond film 1 with a thickness of 0.5 μm is grown on the surface by a microwave plasma chemical vapor deposition method, and the growth conditions are as follows: first, the diamond is nucleated, a negative bias voltage is applied to -140V, and the mixing ratio of methane / hydrogen is 10:100 by volume; The substrate temperature is 700°C, the reaction pressure is 30mbar, the microwave power is 1000W, and the nucleation time is 17 minutes; secondly, the d...

Embodiment 2

[0036] The specific structure of the planar diamond film field emission cathode of this embodiment can be found in figure 2 , the substrate 2 is made of polished metal Mo, and a layer of metal silicide TiSi with a thickness of 80 nm is grown on one side of the substrate 2 by reactive sputtering method. 2 4. The growth conditions are: the substrate temperature is 850 degrees, the silicon target sputtering power is 200W, the Ti target sputtering power is 80W, the flow rate of Ar is 20sccm, and the pressure is 1×10 -2 Torr, the sputtering time is 10 minutes, the sample is taken out after sputtering, in 1:1 H 2 SO 4 and H 2 o 2 Medium corrosion for 30 minutes can obtain high-purity C54 phase TiSi 2 membrane. At TiSi 2 A diamond film 1 with a thickness of 1 μm is grown on the surface by hot filament chemical vapor deposition method. The growth conditions are as follows: first, the diamond is nucleated, the temperature of the filament is 2000 degrees, the negative bias volta...

Embodiment 3

[0038] The specific structure of the planar diamond film field emission cathode of this embodiment can be found in figure 2 A polished N-type (001) single crystal silicon wafer is used as the substrate 2, and a layer of metal silicide FeSi with a thickness of 60 nm is grown on one side of the substrate 2 by ion implantation and annealing method. 2 4. Growth conditions: substrate temperature is 350 degrees, Fe + The injection energy is 200KV, and the metering is 2×10 17 / cm 2 , 1000 degrees annealing time 20 seconds after taking out the sample, in 1:1 H 2 SO 4 and H 2 o 2 Medium corrosion for 30 minutes, high purity FeSi can be obtained 2 membrane. In FeSi 2 A diamond film 1 with a thickness of 1 μm was grown on the surface by a hot filament chemical vapor deposition method, and the growth conditions were the same as those in Example 2. On the other side of the substrate 2, an Au / Ni electrode 3 was deposited by vacuum evaporation. The thickness of Ni was 50nm, and the...

technical field

[0001] The invention belongs to a field emission cathode, in particular to a metal silicide (such as CoSi 2 、TiSi 2 、FeSi 2 、TaSi 2 、MoSi 2 、WSi 2 、NiSi 2 etc.) a transition layer and a diamond thin film, a planar field emission cathode used in the field of flat panel display and a manufacturing method thereof. Background technique

[0002] The diamond film planar field emission cathode made in the prior art is made of doped or non-doped diamond film material, with metal or single crystal silicon as the substrate, a layer of diamond film is grown on it, and the measurement is set on the other side of the substrate. The electrode uses the excellent physical and chemical properties of the diamond film, such as wide bandgap and electronegativity, to make a field emission cathode, and realizes electron emission on the surface of the diamond film under the action of an external electric field. Among them, the diamond film planar cathode made on silicon is g...

Examples

Embodiment 1

[0034]The specific structure of the diamond film planar field emission cathode of this embodiment can be found in figure 2 A polished N-type (001) single crystal silicon wafer is used as the substrate 2, and a layer of 50nm-thick metal silicide CoSi is grown on one side of the substrate 2 by the molecular beam epitaxy method. 2 4. The growth conditions are: use gas containing Si and Co as the source, and the gas pressure is 5×10 -9 Torr, the substrate temperature is 500 degrees, and the growth time is 8 minutes. at CoSi 2 A diamond film 1 with a thickness of 0.5 μm is grown on the surface by a microwave plasma chemical vapor deposition method, and the growth conditions are as follows: first, the diamond is nucleated, a negative bias voltage is applied to -140V, and the mixing ratio of methane / hydrogen is 10:100 by volume; The substrate temperature is 700°C, the reaction pressure is 30mbar, the microwave power is 1000W, and the nucleation time is 17 minutes; secondly, the d...

Embodiment 2

[0036] The specific structure of the planar diamond film field emission cathode of this embodiment can be found in figure 2 , the substrate 2 is made of polished metal Mo, and a layer of metal silicide TiSi with a thickness of 80 nm is grown on one side of the substrate 2 by reactive sputtering method. 2 4. The growth conditions are: the substrate temperature is 850 degrees, the silicon target sputtering power is 200W, the Ti target sputtering power is 80W, the flow rate of Ar is 20sccm, and the pressure is 1×10 -2 Torr, the sputtering time is 10 minutes, the sample is taken out after sputtering, in 1:1 H 2 SO 4 and H 2 o 2 Medium corrosion for 30 minutes can obtain high-purity C54 phase TiSi 2 membrane. At TiSi 2 A diamond film 1 with a thickness of 1 μm is grown on the surface by hot filament chemical vapor deposition method. The growth conditions are as follows: first, the diamond is nucleated, the temperature of the filament is 2000 degrees, the negative bias volta...

Embodiment 3

[0038] The specific structure of the planar diamond film field emission cathode of this embodiment can be found in figure 2 A polished N-type (001) single crystal silicon wafer is used as the substrate 2, and a layer of metal silicide FeSi with a thickness of 60 nm is grown on one side of the substrate 2 by ion implantation and annealing method. 2 4. Growth conditions: substrate temperature is 350 degrees, Fe + The injection energy is 200KV, and the metering is 2×10 17 / cm 2 , 1000 degrees annealing time 20 seconds after taking out the sample, in 1:1 H 2 SO 4 and H 2 o 2 Medium corrosion for 30 minutes, high purity FeSi can be obtained 2 membrane. In FeSi 2 A diamond film 1 with a thickness of 1 μm was grown on the surface by a hot filament chemical vapor deposition method, and the growth conditions were the same as those in Example 2. On the other side of the substrate 2, an Au / Ni electrode 3 was deposited by vacuum evaporation. The thickness of Ni was 50nm, and the...

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