Process for preparing silumin electronic package materials

Abstract

The invention discloses a making technology of high-silafont electronic packing material, which comprises the following steps: A) preparing powder: blending industrial pure aluminum and high-pure silicon at 6-8.8:4-1.2 percentage to prepare Al-Si alloy powder; B) proceeding ball grinding disposal for Al-Si alloy powder at 5-15:1 percentage for 8-32 h; C) loading oxide alloy powder in the pure aluminum; proceeding squeezing disposal on the 300-500 ton hydrostatic machine through forward squeezing pattern; keeping temperature at 400-520 deg.c for 0.5-2 h for Al-Si alloy powder before squeezing; placing each squeezing mould in the heat stove at 10-21 squeezing rate to preheat at 200-400 deg.c; squeezing to produce the product. The invention can improve heat conductivity, airtightness and tensile strength obviously, which keeps low expansion coefficient.

Description

technical field

[0001] The invention relates to a preparation process of an aluminum-silicon electronic packaging material, in particular to a preparation process of a high-silicon aluminum alloy electronic packaging material. Background technique

[0002] Since the first semiconductor integrated circuit came out in 1958, so far, the development of IC chip integration has basically followed the MOORE law. The improvement of chip integration will inevitably lead to the increase of its heating rate, which makes the operating temperature of the circuit rise continuously, which leads to the increase of component failure rate. At the same time, electronic packaging is also constantly developing in the direction of miniaturization, light weight and high-density assembly. Since the 1990s, various high-density packaging technologies, such as chip size packaging (CSP), multi-chip components ( The continuous emergence of MCM) and SLIM have further increased the heat generation rate p...

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