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Photolithographic process, photomask and manufacturing thereof

A manufacturing method and mask technology, which are applied in microlithography exposure equipment, photolithographic plate-making process of pattern surface, semiconductor/solid-state device manufacturing, etc., can solve the problems of increasing manufacturing efficiency, reducing effective cost, etc., and achieve reduction of refraction , improve resolution, reduce the effect of stray light

Inactive Publication Date: 2008-10-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This size reduction process usually increases manufacturing efficiency and reduces effective cost, but the manufacturing process must be accompanied by technological improvements

Method used

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  • Photolithographic process, photomask and manufacturing thereof
  • Photolithographic process, photomask and manufacturing thereof
  • Photolithographic process, photomask and manufacturing thereof

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0039] figure 1 is a cross-sectional view of the reticle 100 with the wavelength shortening medium according to the first embodiment. The mask 100 includes a transparent substrate 102 , an absorbing layer 104 , and a wavelength-reducing material (WRM) 106 . The transparent substrate 102 can use fused silica (fused SiO 2 ) or relatively defect-free glass such as borosilicate glass or soda-lime glass, other suitable materials may also be used.

[0040] The absorption layer 104 can be formed by many different processes, and its material can be a deposited layer, such as a metal layer composed of chromium oxide and iron oxide, or a metal layer composed of molybdenum silicide (MoSi), zirconium silicate (ZrSiO 2 ) and an inorganic layer composed of silicon nitride (SiN). The absorbing layer 104 can be patterned to form one or more openings 108 so that light can pass through without being absorbed by the absorbing layer 104 . In some embodiments, the absorbing layer 104 may furth...

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PUM

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Abstract

Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask can include at least one antireflection coating (ARC) layer.

Description

technical field [0001] The invention relates to an integrated circuit technology, in particular to a mask plate and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development, and the technical progress in IC materials and design has brought IC into a new era, and each era has smaller and more complex circuits than the previous era. However, such progress increases the complexity of IC process and manufacturing. In order to realize these advances, it is necessary to seek further development in IC process and manufacturing technology. [0003] For example, during the evolution of integrated circuits, effective density (ie, the number of interconnected devices per wafer area) typically increases as feature size (ie, the smallest element or line width that can be obtained using a process) decreases. This process of size reduction usually increases manufacturing efficiency and reduces effectiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/14G03F7/20G03F7/00H01L21/027G03C5/00G03F1/46G03F1/54G03F9/00H01L21/00
CPCG03F1/14G03F1/46G03F1/50
Inventor 林本坚陈政宏陈俊光高蔡胜刘如淦施仁杰
Owner TAIWAN SEMICON MFG CO LTD