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Preparation method of carbon/carbon thermal insulation cover for monocrystalline silicon draw machines

A silicon drawing furnace and heat-insulating hood technology are applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., which can solve the problem that it is difficult to meet the requirements of the development of semiconductor single crystal silicon production, difficult to form large-sized products, and high temperature resistance. Problems such as poor thermal shock performance, to achieve the effect of strong practicability, light weight and low cost

Active Publication Date: 2007-10-31
XIAN CHAOMA SCI TECH
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  • Abstract
  • Description
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Problems solved by technology

[0003] At present, the insulation covers for single crystal silicon drawing furnaces are basically made of graphite. Due to the low strength of graphite products, high thermal conductivity, poor high temperature thermal shock resistance, short service life, frequent replacement, and difficulty in forming large-scale products, it is difficult to meet Requirements for the development of semiconductor monocrystalline silicon production

Method used

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  • Preparation method of carbon/carbon thermal insulation cover for monocrystalline silicon draw machines

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Experimental program
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Effect test

Embodiment 1

[0025] (1) Use carbon fiber non-weft cloth and thin carbon fiber mesh tires to alternate circumferentially and radially needle-punch all-carbon fiber quasi-three-way structure prefabricated body; the prefabricated body density is 0.25g / cm 3 ;

[0026] (2) Use furfurone resin to impregnate the carbonized dense preform, immerse in the impregnation tank for about 3 hours under the pressure of -0.094MPa, leave the tank, and transfer to the carbonization furnace at 900°C for carbonization treatment;

[0027] (3) Density of heat preservation cover prefabricated product ≥ 1.20g / cm 3 At the end of the densification process, the heat preservation cover prefabricated product is subjected to high-temperature purification treatment under the condition of 2100 ° C by feeding chlorine gas and Freon.

[0028] (4) After mechanical processing, a carbon / carbon heat preservation cover for a single crystal silicon drawing furnace with a diameter of 750 mm, a height of 1000 mm and a thickness of ...

Embodiment 2

[0031] (1) Using carbon fiber non-weft cloth and thin carbon fiber mesh tires alternately circumferentially wound and radially needled all-carbon fiber quasi-three-way structure preform; the preform density is 0.30g / cm 3 ;

[0032] (2) Use furfurone resin to impregnate the carbonized dense preform, immerse in the impregnation tank for about 3 hours under the pressure of -0.096MPa, leave the tank, and transfer to the carbonization furnace at 950°C for carbonization treatment;

[0033] (3) Density of heat preservation cover prefabricated product ≥ 1.20g / cm 3 At the end of the densification process, the thermal insulation cover prefabricated product is subjected to high-temperature purification treatment under the condition of 2300 ° C by feeding chlorine gas and Freon.

[0034] (4) A charcoal / charcoal insulation cover for a single crystal silicon drawing furnace with a diameter of 900 mm, a height of 1200 mm and a thickness of 50 mm can be obtained after mechanical processing. ...

Embodiment 3

[0037] (1) Use carbon fiber non-weft cloth and thin carbon fiber mesh tires to alternate circumferentially and radially needle-punch all-carbon fiber quasi-three-way structure prefabricated body; prefabricated body density is 0.35g / cm 3 ;

[0038] (2) Use furfurone resin to impregnate the carbonized dense preform, immerse in the impregnation tank for about 3 hours under the pressure of -0.098MPa, and leave the tank, then transfer to the carbonization furnace at 1100°C for carbonization treatment;

[0039] (3) Density of heat preservation cover prefabricated product ≥ 1.20g / cm 3 At the end of the densification process, the heat preservation cover prefabricated product is subjected to high-temperature purification treatment under the condition of feeding chlorine gas and Freon at 2500°C.

[0040] (4) After mechanical processing, a carbon / carbon heat preservation cover for a single crystal silicon drawing furnace with a diameter of 1100 mm, a height of 1500 mm and a thickness of...

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Abstract

The invention discloses a preparing method of carbon / carbon thermal insulation cover of single-crystal silicon drawing oven, which comprises the following steps: toroidal-binding with carbon fiber weftless cloth and thin carbon fabric net tyre; needling radially; producing pseudo three-dimensional thermal insulation cover preformed body with low density; vacuum-dipping with furfural ketone resin; hardening; charring; proceeding fine and close fro 2-4 times repeatedly; reaching density not less than 1. 2g / cm3; ending; leading into chlorine gas or Freon; proceeding high-temperature purified treatment; machining; getting the product. This invention possesses the advantages of simple craft, low cost and long durability.

Description

technical field [0001] The invention belongs to the technical field of heat preservation cover materials for single crystal silicon drawing furnaces, and in particular relates to a preparation method of a carbon / carbon heat preservation cover for single crystal silicon drawing furnaces. Background technique [0002] In addition to the furnace body being made of stainless steel, the single crystal furnace uses graphite parts for the heating system and supports including the crucible. The production of single crystal silicon is to melt the single crystal silicon material with a graphite heater in an inert gas environment, and grow a dislocation-free single crystal by the Czochralski method. Single crystal silicon is made of high-purity silicon powder, under protective atmosphere conditions such as hydrogen or argon, through 1400-1600 ℃ high-temperature melting seedlings to pull the crystal grains to grow gradually. During the drawing process, the graphite crucible and the qua...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/06
Inventor 肖志超苏君明李永军彭志刚邓红兵孟凡才邵海成李睿
Owner XIAN CHAOMA SCI TECH
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