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Method for producing electromagnetic wave shielding material

A shielding material, electromagnetic wave technology, applied in the fields of magnetic/electric field shielding, shielding, electrical components, etc., can solve the problem of high polymer film strength and release film thickness, difficult to obtain pressure-sensitive adhesive and protective film, and reduce production efficiency. and yield and other issues, to achieve the effect of inhibiting the pickling time from being too long, saving production processes and improving production efficiency.

Active Publication Date: 2007-11-07
TIANNUO PHOTOELECTRIC MATERIAL
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

This kind of process must use high light-transmitting polymer film, and has high requirements on the strength of polymer film and the thickness of release film. This process needs to be applied in a thousand-level clean room, and This pressure-sensitive adhesive and protective film are not easy to obtain, which undoubtedly increases the production cost and reduces the production efficiency and yield

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  • Method for producing electromagnetic wave shielding material
  • Method for producing electromagnetic wave shielding material

Examples

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Embodiment 1

[0051] On the polyester film (PET) surface with a length of 200 meters, a width of 1030mm, and a thickness of 75 microns, the surface pretreatment is carried out with plasma, and the surface dyne value is 20, and then vacuum magnetron sputtering copper plating is carried out on the treated surface. Vacuum degree is 2.5×10 -2 Pa, the moving speed of the polyester film is 1.5m / min, and the surface resistance of the material at this time is 100-150Ω / sq.

[0052] A thick metal copper layer of 5 μm is electroplated on the vacuum magnetron sputtering coating to produce a PET film copper-clad board.

[0053] Alkaline pyrophosphate copper plating conditions are as follows: plating solution contains copper pyrophosphate: 50g / L; potassium pyrophosphate: 300g / L; ammonium citrate: 20g / L; ammonia water: 3ml / L; pH value: 8.3; temperature: 45℃; current density: 1.0A / dm 2 ; Cathode moving speed: 5.0m / h, using air stirring, normal filtration, voltage 4V, the surface resistance of the materia...

Embodiment 2

[0057] The surface of the polyimide film (PI) with a length of 200 meters, a width of 1030 mm and a thickness of 50 microns is pretreated with plasma, and the surface dyne value is 20, and then vacuum magnetron sputtering nickel plating is carried out, and the vacuum degree is 2.1 ×10 -2 Pa, the moving speed of the polyimide film is 1.2m / min, and the surface resistance of the material at this time is 70-100Ω / sq.

[0058] A thick metal nickel layer of 10 μm is electroplated on the vacuum magnetron sputtering coating to produce a metallized PI film.

[0059] Acidic nickel plating conditions: nickel sulfate: 200g / L; nickel chloride: 40g / L; boric acid: 30g / L; pH value: 4.0; temperature: 40°C; current density: 5A / dm 2 ; Cathode moving speed: 8.0m / h, using air stirring, normal filtration, voltage 4V. At this time, the surface resistance of the material was 0.010Ω / sq.

[0060] The above-mentioned metal nickel layer was pasted on the plexiglass with a thickness of 5 mm and a light ...

Embodiment 3

[0063] The surface of the polyethylene film with a length of 200 meters, a width of 1030 mm and a thickness of 125 microns is pretreated with plasma, and the surface dyne value is 22, and then vacuum magnetron sputtering is carried out to plate copper and nickel, and the vacuum degree is 2.2×10 -2 Pa, the moving speed of the polyethylene film is 2.0m / min, and the surface resistance of the material at this time is 150-200Ω / sq.

[0064] On the vacuum magnetron sputtering coating, a 1.5 μm copper layer is first electroplated, and then a 0.1 μm metallic nickel (protective copper layer) is electroplated, thus producing a polyethylene film copper-plated with nickel.

[0065] Alkaline pyrophosphate copper plating conditions are as follows: plating solution contains copper pyrophosphate: 50g / L; potassium pyrophosphate: 300g / L; ammonium citrate: 20g / L; ammonia water: 3ml / L; pH value: 8.3; temperature: 45℃; current density: 1.0A / dm 2 ; Cathode moving speed: 10.0m / h, using air stirring,...

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Abstract

A method for preparing shield-material of electromagnetic wave includes carrying out plasma treatment on one surface of polymer film to make dyne value be less than 30, forming metal layer on treated surface, sticking said metal layer on at least one surface of glass with high light transparency, removing off polymer film and carrying out etching at metal layer on glass for forming metal lattice with high light transparency.

Description

Technical field: [0001] The invention relates to a preparation method of an electromagnetic wave shielding material applied to display equipment on various electronic machines and communication devices. Background technique: [0002] In recent years, with the rapid development of the information society, the technology of information-related devices has been rapidly developed and gradually spread. Various electronic equipment and communication devices, such as cathode ray tubes (CRT), liquid crystal, EL, PDP, FED and other display devices, used for televisions, personal computers, guidance displays at stations and airports, and other various kind of information. From these electronic machines, pachinko, slot machines and other electronically controlled game machines, electromagnetic waves emitted from communication devices such as portable electronics or the influence of electromagnetic waves on these machines is worrying. For example, people have considered the problem of...

Claims

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Application Information

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IPC IPC(8): H05K9/00G12B17/02
Inventor 夏祥华耿秋菊曾海军林磊夏登峰刘世明夏登收张军
Owner TIANNUO PHOTOELECTRIC MATERIAL
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