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Method for growing barium strontium titanate on metal titanium-based substrate

A technology of barium strontium titanate and metal titanium, which is applied in the field of growing barium strontium titanate thin films, can solve the problems of reduced film performance, complicated process, easy oxidation, etc., and achieves the effects of improving crystallinity, good thermal stability and good crystallization

Inactive Publication Date: 2011-05-04
SHANGHAI UNIV
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Problems solved by technology

However, metals such as Cu, Ni, and Al are chemically active, and are easy to oxidize or interact with the film during the crystallization process of the film, which will significantly reduce the film performance.
In the world, reducing atmosphere or controlling oxygen partial pressure is usually used to prepare barium strontium titanate thin films on active metals, but the process is relatively complicated. At the same time, the increase of oxygen vacancies and the control of dielectric constant are always difficult to solve. contradiction

Method used

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  • Method for growing barium strontium titanate on metal titanium-based substrate
  • Method for growing barium strontium titanate on metal titanium-based substrate
  • Method for growing barium strontium titanate on metal titanium-based substrate

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Embodiment 1

[0019] Embodiment one: the technical process and steps of this embodiment are as follows

[0020] (1) Pretreatment of the titanium substrate: First, mechanically polish the 10×10mm titanium substrate to obtain a flat and smooth surface, then perform ultrasonic cleaning with deionized water, acetone, and absolute ethanol in sequence, and dry it for later use.

[0021] (2) Preparation of sol

[0022] ① Preparation of lanthanum nickelate (LNO) sol: Weigh 1.7448 g of nickel nitrate and 2.2222 g of lanthanum nitrate, add 5 ml of deionized water and stir at 90°C for 2 hours, then lower the solution to 70°C, and then add 0.2777 g of polyethylene Alcohol, stirred for 1 hour, finally cooled to 65°C, then added 15ml of acetic acid, stirred for 24 hours, and finally got 0.3mol / L LaNiO 3 Sol 20ml, spare.

[0023] ② Preparation of barium strontium titanate (BST) sol: Weigh 2.7778 grams of tetrabutyl titanate, add 5 ml of ethylene glycol methyl ether, and stir at 85 ° C for 3 hours; then ...

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Abstract

A method for growing barium strontium titanate thin film on titanium substrate is carried out by inducing into lanthanum nickelate buffer layer between titanium and barium strontium titanate thin layer, pre-treating titanium substrate, preparing lanthanum nickelate sol and barium strontium titanate sol, throwing glue while filming by rotating method, heat treating at 100-720 degree and crystallizing at 700-720 degree to obtain final thin film with perovskite crystal-phase structure. The raw material with Ti / LNO / BST composite structure has excellent dielectric performance and can be used as component of piezoelectric tuning microwave device.

Description

technical field [0001] The invention relates to a method for growing a barium strontium titanate thin film on a metal titanium substrate substrate, and belongs to the technical field of ferroelectric material preparation technology. Background technique [0002] Barium strontium titanate (Ba x Sr 1-x TiO 3 , BST) belongs to ABO 3 Type perovskite structure ferroelectric material, which has excellent dielectric properties: easy adjustment of dielectric constant, high insulation resistance, low dielectric loss, high electrical temperature stability, etc. With the change of strontium content, (Ba x Sr 1-x TiO 3 , BST) Curie temperature can be adjusted in a wide temperature range (-233 ° C ~ 120 ° C), with the high dielectric properties of barium titanate and the high stability and low loss of strontium titanate, convenient Barium strontium titanate (BST) has become one of the most promising ferroelectric materials. It is expected to be used in new voltage-controlled tune...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32
Inventor 程晋荣朱伟诚孟中岩俞圣雯
Owner SHANGHAI UNIV
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