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ZnO based LED and its preparing process

A technology of light-emitting diodes and electrodes, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems that the performance of p-type ZnO thin films needs to be improved, the growth conditions are difficult to control, and the equipment maintenance is difficult, so as to improve the repeatability and growth cost. low, the effect of improving device performance

Inactive Publication Date: 2008-01-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, plasma-assisted growth technology generally has high cost, difficult equipment maintenance, and difficult control of growth conditions.
And the performance of the grown p-type ZnO film still needs to be improved

Method used

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  • ZnO based LED and its preparing process

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Clean the surface of the silicon substrate and put it into the growth chamber of the metal-organic chemical vapor deposition system, and the growth chamber is evacuated to 10 -4 pa, heat the substrate to 500°C, feed organic zinc source and oxygen, and deposit n-ZnO film layer on one side of the substrate with Ga as the dopant source, the growth pressure is 50Torr, and the film thickness is 2μm; then feed organic zinc Source, organic magnesium source, oxygen, the growth pressure is 50Torr, deposit n-Zn on the n-ZnO film layer 0.8 Mg 0.2 O thin film layer, the thickness of the film layer is 50nm; then alternately feed organic zinc source, oxygen and organic zinc source, organic magnesium source, oxygen, the growth pressure is 50Torr, deposit ZnO layer and Zn 0.9 Mg 0.1 O layer, forming 5 cycles of ZnO / Zn 0.9 Mg 0.1 O quantum well layer, ZnO and Zn 0.9 Mg 0.1 The O widths are 5nm and 6nm respectively; then lower the temperature to 400°C and feed organic zinc source, ...

Embodiment 2

[0019] Clean the surface of the zinc oxide substrate and put it into the growth chamber of the metal organic chemical vapor deposition system, and the growth chamber is evacuated to 10 -4 Pa, heat the substrate to 550°C, feed organic zinc source and oxygen, and deposit n-ZnO film layer on one side of the substrate with Ga as the dopant source, the growth pressure is 50 Torr, and the film thickness is 1.5 μm; Zinc source, organic magnesium source, oxygen, growth pressure of 50Torr, deposit n-Zn on the n-ZnO film layer 0.75 Mg 0.25 O film layer, the thickness of the film layer is 50nm; then alternately feed organic zinc source, oxygen and organic zinc source, organic magnesium source, oxygen, the growth pressure is 50 Torr, deposit ZnO layer and Zn 0.8 Mg 0.2 O layer, forming 7 periods of ZnO / Zn 0.8 Mg 0.2 O quantum well layer, ZnO and Zn 0.8 Mg 0.2 The O widths are 5nm and 5nm respectively; then lower the temperature to 400°C and feed organic zinc source, organic magnesiu...

Embodiment 3

[0021] Clean the gallium nitride substrate surface and put it into the growth chamber of the metal-organic chemical vapor deposition system, and the growth chamber is evacuated to 10 -4 Pa, heat the substrate to 600°C, feed organic zinc source and oxygen, and deposit n-ZnO film layer on one side of the substrate with Al as the doping source, the growth pressure is 50Torr, and the film thickness is 2μm; then feed organic zinc Source, organic magnesium source, oxygen, the growth pressure is 50Torr, deposit n-Zn on the n-ZnO film layer 0.5 Mg 0.5 O film layer, the thickness of the film layer is 30nm; then alternately feed organic zinc source, oxygen and organic zinc source, organic magnesium source, oxygen, the growth pressure is 50Torr, deposit ZnO layer and Zn 0.6 Mg 0.4 O layer, forming 10 cycles of ZnO / Zn 0.6 Mg 0.4 O quantum well layer, ZnO and Zn 0.6 Mg 0.4 The O widths are 4nm and 4nm respectively; then lower the temperature to 400°C and feed organic zinc source, org...

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Abstract

The invention relates to a ZnO-base light emitting diode, which uses ZnO as base, to deposit a n-ZnO film layer, a n-Zn1-xMgxO film while 0<x<0.6, a ZnO quantum well layer, a p-Zn1-xMgxO film while 0<x<0.6, a p-ZnO film, and a second electrode on one face of a liner from down to up, and deposit a first electrode on another face of the liner. The ZnO quantum well layer is composed of z periodical ZnO / Zn1-yMgyO quantum well layers, while 0<y<0.5, and z value is 5-10.The invention uses metal organic chemical gas deposit method to grow product, wherein the p-ZnO and p-Zn1-xMgxO film use the non-plasma of O2 / NO mixed gas to assist nitrogen doping. The invention optimizes the NO / O2 ratio to improve the nitrogen doping density, to improve the device property. The ZnO-base light emitting diode uses quantum well as active layer to improve lighting efficiency.

Description

technical field [0001] The invention relates to a ZnO-based light-emitting diode and a preparation method thereof. Background technique [0002] ZnO is considered as an ideal material for short-wavelength light-emitting devices due to its direct bandwidth of 3.37eV and exciton binding energy of 60meV at room temperature. The preparation of n-type and p-type ZnO conductive crystal films with controllable properties is the key to realize the application of ZnO-based optoelectronic devices. At present, people's research on n-type ZnO crystal thin films has been relatively mature, and the real-time doped growth of n-type ZnO crystal thin films with excellent properties has been realized. However, the p-type doping of ZnO has encountered many difficulties, mainly because the solid solubility of acceptor elements in ZnO is very low, the acceptor energy level is generally deep, and there are many intrinsic donor defects in ZnO itself. Highly self-compensating effects on acceptors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 叶志镇曾昱嘉卢洋藩徐伟中
Owner ZHEJIANG UNIV
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