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Large area electron field emission nano structure array and its preparation method

A nanostructure and electronic field technology, which is applied in the manufacture of electrode systems, the manufacture of discharge tubes/lamps, circuits, etc., can solve the problem of high production cost, and achieve the effect of low cost, suitable for large area preparation, and good electrical contact performance.

Inactive Publication Date: 2008-03-26
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Relying on photolithography to prepare large-area field emitter arrays with nano-tip structures, the production cost is relatively high

Method used

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  • Large area electron field emission nano structure array and its preparation method
  • Large area electron field emission nano structure array and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Aluminum foil (purity 99.995%) with a thickness of 0.2 mm is mechanically polished with a lapping paste, then annealed at a temperature of 500 degrees Celsius for 5 hours under the protection of a nitrogen atmosphere, in ethanol: dichloromethane: acetone (volume ratio 1: 2: 1) Ultrasonic cleaning is performed in the mixed solution, followed by alkaline cleaning with 0.24 mol / L NaOH solution, to remove the natural oxide film with a thickness of about 30-1000 Ȧ on the surface. Electrochemical polishing was carried out for 3 minutes in a mixed solution of perchloric acid:ethanol (volume ratio 1:9), the polishing voltage was selected as 20V, and the temperature of the polishing solution was controlled at 5°C (±0.5°C).

[0022] After the above-mentioned pretreatment, the aluminum foil is anodized once in 0.3M / L oxalic acid solution, the voltage selection during oxidation is 40V, the temperature is 5°C (± 0.5°C), and the oxidation time is 2 hours; then mixed acid solution (6wt...

Embodiment 2

[0028] On the monocrystalline silicon wafer, a layer of silver with a thickness of 500 nm is plated by magnetron sputtering, and then a layer of aluminum with a thickness of 5 microns is plated on the silver by evaporation to obtain aluminum attached to the silver substrate.

[0029] The obtained aluminum adhered to the silver substrate was placed in a 0.3M / L oxalic acid solution for anodic oxidation. The voltage for oxidation was 40V, the temperature was 5°C (±0.5°C), and the oxidation time was 30 minutes. The prepared aluminum oxide film with nano-holes retains the matrix of the holes and is completely integrated with the silver substrate.

[0030] Use oxalic acid solution with a volume ratio of 5% as the etching solution to etch the aluminum oxide film prepared by the anodic oxidation method. The temperature of the etching solution is 40 degrees Celsius, the stirring rate is 30 rpm, and the etching time is 5 minute.

[0031] Through the above process, a large-area ordered ...

Embodiment 3

[0036] The operation steps as described in Example 1 are performed first to obtain an aluminum oxide film with nano-holes that is completely integrated with the un-oxidized aluminum foil. Then, the unoxidized aluminum foil was removed with a saturated HgCl solution to obtain an aluminum oxide film with nanopores. Copper with a thickness of 20 microns is plated on the aluminum oxide film with nano-holes as a substrate by magnetron sputtering. Use a sulfuric acid solution with a volume ratio of 10% as the etching solution to etch the obtained aluminum oxide film attached to the copper substrate. The temperature of the etching solution is 60 degrees Celsius, and the stirring speed is 50 revolutions per minute. The time is 50 minutes.

[0037]Through the above process, a large-area ordered aluminum oxide nanowire array is prepared.

[0038] The ratio of the length of the nanowires to the root diameter of the nanowires in the nanowire array is 3500nm:62nm=56.45.

[0039] Electro...

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Abstract

This invention discloses a new type of large area electronic field emission nano-structured array and its preparation method, in which, the structure includes: Alumina nano-conical cones of pinpoint structure are distributed uniformly on a matrix vertically and are coated with a layer of electronic field emission material and holes of the matrix are filled with conductive electrode materials. The preparation method includes: carrying out electrochemical anode oxidation process to an Al foil or Al adhered on the matrix to get a matrix with Almina film and nm holes at the surface, corroding the film with a corroding solution reacting with Almina to get the large area serial Almina nm conical array, filling the holes of the matrix with conductive electrode material and then coaring a layer of field emission material on the array to get a new type of large area electronic field emission nm-structured array.

Description

technical field [0001] The invention relates to a large-area electron field emission nanostructure array and its preparation technology. Background technique [0002] The study found that the tip structure of the field emitter can enhance the field strength at the tip and significantly improve the emission performance of the emitter material. Such as the literature "Lo HC, Das D, Chen KH, et al. SiC-cappednahotip arrays for field emission with ultralow turn-on field. Appl. Phys. Lett. 2003, 83: 14 20-1422.", using plasma etching The technology has prepared Si nano-tips arranged in an orderly manner on the surface of the silicon wafer, with a SiC "cap" several nanometers thick on the top of the tip. The turn-on electric field of this nano-structure is only 0.35V / μm. For example, in the literature "Tang C, Bando Y. Effect of BN coatings onoxidation resistance and field emission of SiC nanowires. Appl. Phys. Lett. 2003, 83: 659-661." SiC nanowires are wrapped with a layer of 2...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02
Inventor 任山刘向阳
Owner SUN YAT SEN UNIV
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