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Method for preparing column-shape neodymium-doping bismuth titanate ferroelectric thin film used for ferroelectric memory

A ferroelectric memory, neodymium bismuth titanate technology, applied in the direction of ferroelectric carrier recording, can solve the problems of unfavorable anti-fatigue properties and unfavorable compatibility of film capacitors, and achieve the effects of good anti-fatigue properties, large size and low crystallization temperature

Inactive Publication Date: 2008-04-30
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the one hand, this is not conducive to the improvement of the anti-fatigue characteristics of film capacitors, and on the other hand, it is also not conducive to compatibility with existing CMOS processes.

Method used

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  • Method for preparing column-shape neodymium-doping bismuth titanate ferroelectric thin film used for ferroelectric memory
  • Method for preparing column-shape neodymium-doping bismuth titanate ferroelectric thin film used for ferroelectric memory
  • Method for preparing column-shape neodymium-doping bismuth titanate ferroelectric thin film used for ferroelectric memory

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Experimental program
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Effect test

Embodiment 1

[0031] (1) preparation has Pt as the Si substrate of bottom electrode;

[0032] The specific method is:

[0033] (1.1) surface-treating and cleaning the silicon substrate 1 according to a standard CMOS process;

[0034] (1.2) A silicon dioxide barrier layer 2 with a thickness of 150 nm is formed on the surface of the silicon substrate 1 by a thermal oxidation method;

[0035] (1.3) Prepare a 20nm-thick titanium dioxide bonding layer 3 on the silicon dioxide barrier layer 2 by magnetron sputtering, the process conditions of the magnetron sputtering are: sputtering pressure 1.5Pa, sputtering substrate temperature 200°C , the sputtering atmosphere is O 2 :Ar=1:9;

[0036] (1.4) Prepare the lower electrode metal layer Pt with a thickness of 150nm on the titanium dioxide bonding layer 3 by magnetron sputtering. The shooting atmosphere is Ar gas;

[0037] (2) adopt the following raw materials (its purity is analytically pure 99.9%), use the sol-gel method to prepare the Bi that...

Embodiment 2

[0057] (1) preparation has Pt as the Si substrate of bottom electrode;

[0058] The specific method is:

[0059] (1.1) surface-treating and cleaning the silicon substrate 1 according to a standard CMOS process;

[0060] (1.2) A silicon dioxide barrier layer 2 with a thickness of 150 nm is formed on the surface of the silicon substrate 1 by a thermal oxidation method;

[0061] (1.3) Prepare a 20nm-thick titanium dioxide bonding layer 3 on the silicon dioxide barrier layer 2 by magnetron sputtering, the process conditions of the magnetron sputtering are: sputtering pressure 1.5Pa, sputtering substrate temperature 200°C , the sputtering atmosphere is O 2 :Ar=1:9;

[0062] (1.4) Prepare the lower electrode metal layer Pt with a thickness of 150nm on the titanium dioxide bonding layer 3 by magnetron sputtering. The shooting atmosphere is Ar gas;

[0063] (2) Adopt the following raw materials (its purity is analytically pure 99.9%), use the sol-gel method to prepare the Bi that...

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Abstract

The invention discloses a method for preparing a columnar neodymium-doped bismuth titanate ferroelectric thin film for ferroelectric memory, belonging to the scope of new microelectronic materials and devices. The ferroelectric memory columnar neodymium-doped bismuth titanate ferroelectric film of the present invention is prepared by a sol-gel method, the concentration of the precursor solution is 0.04-0.05 mol / liter, and after each spin coating, it is baked and pyrolyzed. The thin film is annealed. During annealing, the thin film sample is directly placed in a tube furnace that has been heated to 645-655°C from room temperature and atmospheric environment, and annealed for 5-10 minutes in an air atmosphere. The columnar neodymium-doped bismuth titanate ferroelectric thin film used in the ferroelectric memory of the present invention is a polycrystalline thin film with preferred orientation, the crystal grains are columnar and larger in size, and has the advantages of better fatigue characteristics and lower crystallization temperature, and can be compared with the existing CMOS Process compatible.

Description

technical field [0001] The invention belongs to microelectronic new material and device technology, and specifically relates to a preparation method of a columnar neodymium-doped bismuth titanate ferroelectric thin film for ferroelectric memory. Background technique [0002] Compared with traditional semiconductor memory, ferroelectric random access memory (FeRAM) has many outstanding advantages, and has broad application prospects and huge economic benefits. Bismuth titanate doped with neodymium and Nd is a new type of ferroelectric material for FeRAM, which has high remnant polarization and good fatigue resistance. Existing literature has reported the preparation of this material using the sol-gel method, wherein, people such as Lu C.J. use the precursor solution of higher molar concentration, in the traditional annealing mode (multi-layer coating one-time annealing, heating rate during annealing Slower), the number of film grains produced is large, and the grain size is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50C04B35/462G11B9/02
Inventor 于军杨斌郑朝丹李佳王耘波高俊雄周文利
Owner HUAZHONG UNIV OF SCI & TECH
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