Semiconductor device and its making method
A manufacturing method and semiconductor technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of rising contact resistance of contact plugs, and achieve the effects of preventing contact resistance from decreasing and inhibiting oxidation.
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no. 1 approach
[0111] 8 to 13 are cross-sectional views during the manufacturing process of the semiconductor device according to the first embodiment of the present invention.
[0112] In order to manufacture this semiconductor device, first, the steps of Fig. 1(a) to Fig. 3(a) described above are carried out.
[0113] Thereafter, as shown in FIG. 8( a ), a conductive film 24 is formed on the insulating adhesive film 15 , in the first opening 14 a, and in the first hole 11 a.
[0114] The conductive film 24 is made of a material that does not easily lose conductivity even after high-temperature annealing in an oxygen atmosphere such as reduction annealing performed later. As such a conductive film 24, there is any one of the following single-layer films, or a laminated film in which at least two of them are laminated: for example, a titanium film, a titanium nitride film, an aluminum titanium nitride film, an iridium film, an oxide Iridium (IrO 2 ) film, platinum film and ruthenium film. ...
no. 2 approach
[0168] 14 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention. In addition, in FIG. 14, the same code|symbol as that of 1st Embodiment is attached|subjected to the element demonstrated in 1st Embodiment, and description is abbreviate|omitted below.
[0169] In this embodiment, as shown in FIG. 14 , the diameter of the first contact plug 26 is larger than the diameter of the second contact plug 13b. The configurations other than those described above are the same as those of the first embodiment.
[0170] As illustrated in Fig. 3 (a), in the case of filling the first hole 11a with the second tungsten film 18, in order to prevent the film from falling off due to the strong stress of tungsten, the diameter of the first hole 11a is reduced, and it is necessary to use a thin film. thickness of the second tungsten film 18 to form the first hole 11a.
[0171] In contrast, in the first embodiment, as illustrated in FIG. 8(a),...
no. 3 approach
[0175] 15 to 18 are cross-sectional views during the manufacturing process of the semiconductor device according to the third embodiment of the present invention. In addition, in these drawings, the same code|symbol as those of these embodiment is attached|subjected to the element demonstrated in 1st, 2nd embodiment, and the description is abbreviate|omitted below.
[0176] In order to manufacture this semiconductor device, first, the cross-sectional structure diagram of FIG. 1(a) mentioned above is obtained. Afterwards, as shown in FIG. 15(a), a photoresist is applied on the first insulating film 11, and exposed and developed, so that the first and second source / drain regions 8a, 8b, a first resist pattern 30 having first and second windows 30a and 30b, respectively, is formed.
[0177] Afterwards, the first insulating film 11 and the protective insulating film 10 are etched through the above-mentioned first and second windows 30a and 30b to form first and second contact hol...
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