Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method

Abstract

The invention relates to a high-temperature press sensor of silicon-silicon-bonded-based silicon on an insulator (SOI) and a producing method, belonging to the field of sensor chip, characterized in that a shallow slot and a gas vent on a support silicon substrate are all formed through anisotropic etch; suitable depth of the shallow slot can be obtained by controlling etching time so as to accomplish over-voltage protection for the device; the support silicon substrate is bonded with an inverted SOI chip; a piezoresistor is produced on the top layer of silicon after reducing and polishing the back of the SOI chip. The device can operate normally at high temperature using SOI buried oxide layer for isolation of sensitive component and elastic component.

Description

technical field [0001] The invention relates to a silicon-on-insulator silicon-on-insulator (SOI) high-temperature pressure sensor chip and a manufacturing method thereof, which belong to the field of sensor chips. Background technique [0002] As the most commercially successful MEMS device, silicon-based pressure sensors have been widely used and technologically advanced in the fields of petroleum, aerospace, medical equipment, and automotive electronics in the past few decades. However, because the traditional bulk silicon pressure sensor uses a pn junction as an electrical isolation means, it will eventually fail due to the increase of the reverse leakage current in an environment above 125 ° C (Diem et al. published on pages 8 of Sensors and Actuators A 46-47 (1995) SOI 'SIMOX' from bulk to surface micromachining, a new age for silicon sensors and actuators. A paper). The use of SOI materials can play a significant role in improving the high temperature performance of ...

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Problems solved by technology

[0003] Ordinary SOI high temperature pressure sensors (such as Q.Wang et al. published in Sensors and Actuators A120 (2005) page 468 on Fabrication and temperature coefficient compensation technology of low cost high temperature pressure sensor article) take a long time anisotropic etching to form a silicon cup The structure is used as a process for making stress films, so it is difficult to ensure the uniformity of the different positions of the film and the stress films prepared in different batches, making the process stability not high

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