Nano-stack TiN gradient film and preparation thereof
A nano-lamination and gradient film technology, which is applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of easy cracking of TiN ion plating coating, so as to improve the phenomenon of easy cracking and peeling, and suppress cracking Generates and expands, enhances wear-resistant effects
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0031] After removing oil stains on the surface and ultrasonic cleaning in trichloroethylene organic solvent for 5-10 minutes, the TiAl valve is taken out and installed on a special fixture and placed in the vacuum chamber of the ion plating equipment, vacuumed to 0.005Pa, and then the workpiece Heat to about 450°C; after the vacuum chamber is heated for 30 minutes, pass high-purity argon to the vacuum chamber to a pressure of about 2Pa, apply a negative bias of about 600 volts to the workpiece, and perform ion bombardment cleaning for about ten minutes; select a time period of 4 minutes , The evaporation source beam flow is 230-300A, the workpiece is applied with a negative bias of about 80-140 volts, high-purity nitrogen is introduced and the nitrogen flow rate is gradually adjusted from 0 to 80 ml / min during the cycle time, and then the nitrogen flow rate is adjusted from 80 ml / min. The minute gradually reaches 0, and the deposition time is 50 minutes. Thus, a nano-layered TiN ...
Embodiment 2
[0038] The difference from Example 1 lies in:
[0039] After removing oil stains on the surface and ultrasonic cleaning in trichloroethylene organic solvent for 10 minutes, the TiAl valve is taken out and installed on a special fixture and placed in the vacuum chamber of the ion coating equipment, evacuated to 0.008Pa, and then the workpiece is heated to About 400℃; after heating and holding the vacuum chamber for 30 minutes, pass high-purity argon to the vacuum chamber to a pressure of about 2Pa, apply a negative bias of about 500 volts to the workpiece, and perform ion bombardment cleaning for about 5 minutes; select time period T = 5 minutes , The evaporation source beam is 200-270A, the workpiece is applied with a negative bias of about 120-180 volts, high-purity nitrogen is introduced and the nitrogen flow is gradually adjusted from 0 to 100 ml / min during the cycle, and then the nitrogen flow is adjusted from 100 ml / min. The minute gradually reaches 0, and the deposition time...
Embodiment 3
[0042] The difference from Example 1 lies in:
[0043] After removing oil stains on the surface and ultrasonic cleaning in trichloroethylene organic solvent for 10 minutes, the TiAl valve is taken out and installed on a special fixture and placed in the vacuum chamber of the ion plating equipment, evacuated to 0.013 Pa, and then heated to About 350°C; after heating and holding the vacuum chamber for 30 minutes, pass high-purity argon to the vacuum chamber to a pressure of about 2Pa, apply a negative bias of about 400 volts to the workpiece, and perform ion bombardment cleaning for about 8 minutes; select time period T = 2 minutes , The evaporation source beam flow is 280-350A, the workpiece is applied with a negative bias of about 140-200 volts, and high-purity nitrogen is introduced. The nitrogen flow rate is gradually adjusted from 0 to 150 ml / min in the cycle time, and then the nitrogen flow rate is adjusted from 150 ml / min. Gradually to 0, the deposition time is 120 minutes. T...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com