Method of manufacturing tin indium oxide target material

Abstract

The invention discloses a method for producing a target material of tin indium oxide, comprising the following steps of: A. using ITO powder, of which purity is more than 99.99 percent and an average particle diameter is 0.01 to 10 micrometers, as a main raw material of the target material; B. fully dissolving pure water, a methacrylamide monomer and N-N' dimethyl acrylamide to form a pre-mixed solution, using tetramethyl hydroxylamine as a dispersant, adding the target material obtained in the step A, stirring, pulping and grinding the mixture to obtain a paste; C. dewatering the pulp obtained in a step B after casting; D. densifying the product obtained in the step C to obtain the target material of tin indium oxide. This invention solves the problems of difficulties in high densification, size enlargement and shape diversification of the ITO target material obtained by means of the prior art, thereby greatly improving the production efficiency and the rate of the finished product, and the obtained ITO target materials have high density and are free from restrictions of size and shape.

Description

technical field [0001] The invention relates to the manufacture of semiconductor ceramic products, in particular, the invention is a method for producing an indium tin oxide target. Background technique [0002] Indium Tin Oxide (Indium Tin Oxide, referred to as "ITO") is a flat or cylindrical ceramic semiconductor material with tin oxide doped with indium oxide as the main body. It is used for magnetron sputtering to manufacture ITO transparent conductive films. It is a liquid crystal display , flat panel display, electrostatic shielding, and solar cells are necessary functional materials. At present, the DC magnetron sputtering method is the leading preparation process for transparent conductive films used in international high-end display devices. The process uses ITO semiconductor ceramics (90% In 2 o 3 -10%SnO 2 ) as a sputtering source, using DC magnetron sputtering method to prepare ITO transparent conductive film, the prepared transparent conductive film is of go...

AI Technical Summary

Problems solved by technology

[0005] 1. The use of vacuum hot pressing and hot isostatic pressing to manufacture ITO targets cannot achieve a breakthrough in size. Domestically, only ≤300×400mm, small-sized targets cannot meet the requirements of STN-LCD, PDP and TFT-LCD. The requirements of high-resolution displays for target integration and ultra-high density still need to rely on imported products

[0006] 2. Vacuum hot pressing and hot isostatic pressing processes cause the lack of oxygen atoms inside the ITO target to varying degrees, and the resistance value of the ITO film produced by this is relatively high, so the obtained ITO film cannot be used for high-resolution displays.

[0007] 3. Cold isostatic pressing - sintering, vacuum hot pressing and hot isostatic pressing processes have high production costs, large follow-up processing, and low yield

[0008] 4. When these processes are used to manufacture cylindrical or other special-shaped targets, the cost is more expensive, the processing volume is larger, and the yield is lower.

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