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Gate dielectric taking TiO2 as MOS structure and preparation method thereof

A technology of MOS structure and gate dielectric, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve problems such as restricting the safe and effective use of CMOS, and achieve reduced radiation effects, easy operation, and uniform surface. Effect

Inactive Publication Date: 2010-06-09
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem of the deviation of the threshold voltage of MOS devices under ionizing radiation has not been effectively solved, mainly because in the continuous irradiation environment, the influence of electron-hole pairs generated by irradiation cannot only improve SiO 2 Therefore, to a certain extent, it restricts the safe and effective use of CMOS in outer space environment and radiation environment in military engineering

Method used

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  • Gate dielectric taking TiO2 as MOS structure and preparation method thereof
  • Gate dielectric taking TiO2 as MOS structure and preparation method thereof
  • Gate dielectric taking TiO2 as MOS structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Fabrication of MOS Structure Gate Dielectric TiO by Electron Beam Evaporation 2 film

[0046] (1) Cleaning and drying of the substrate

[0047] Soak the silicon wafer in acetone solution and clean it with ultrasonic vibration for 10 minutes, then soak it in alcohol solution and clean it with ultrasonic wave for 10 minutes, then rinse it with deionized water, and heat the substrate in concentrated sulfuric acid until white smoke last for 4 minutes; rinse with deionized water and then repeat the heating process of concentrated sulfuric acid; then put deionized water, hydrogen peroxide and ammonia water in a mixed solution whose volume ratio is 6:2:1 and boil for 5 minutes; finally deionized water The substrate rinsed with deionized water is put into a mixed solution of deionized water, hydrogen peroxide and hydrochloric acid with a volume ratio of 6:2:1 and boiled for 5 minutes; rinsed with deionized water and then put into a drying oven to dry. pack it for spare;

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Embodiment 2

[0055] Fabrication of MOS Structure Gate Dielectric TiO by Electron Beam Evaporation 2 film

[0056] Deposition of TiO on silicon substrates by changing the substrate temperature 2 film

[0057] (1) cleaning and drying of the substrate are the same as in Example 1

[0058] (2) Unloading and coating

[0059] Put 99.99% granular TiO 2 Put it into the crucible of the electron beam coating machine, put the cleaned and dried silicon substrate on the heating electric furnace of the electron beam coating machine, so that the silicon substrate is located 30cm above the crucible; close the bell jar, start vacuuming, When the vacuum degree is 3×10 -3 Pa, turn on the baking switch, bake the vacuum chamber for 10 minutes, then turn on the substrate heater to heat the silicon substrate, the temperature of the substrate is controlled at 100°C; -4 At Pa, turn on the power switch and filament switch on the electric control cabinet in order, adjust the filament current at 0.5A, and prehe...

Embodiment 3

[0063] Fabrication of MOS Structure Gate Dielectric TiO by Electron Beam Evaporation 2 film

[0064] (1) cleaning and drying of the substrate are the same as in Example 1

[0065] (2) Unloading and coating

[0066] Put 99.99% granular TiO 2 Put it into the crucible of the electron beam coating machine, put the cleaned and dried silicon substrate on the heating electric furnace of the electron beam coating machine, so that the substrate is located 30 cm above the crucible; close the bell jar, start vacuuming, when Vacuum degree is 3×10 -3 Pa, turn on the baking switch, bake the vacuum chamber for 10 minutes, then turn on the substrate heater to heat the silicon substrate, the temperature of the substrate is controlled at 300°C; -4 At Pa, turn on the power switch and filament switch on the electric control cabinet in order, adjust the filament current at 0.5A, and preheat for 10 minutes; turn on the deflection and focus switches, select the high voltage as 6KV, adjust the be...

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Abstract

The invention relates to a gate dielectric TiO2 film with MOS structure and a preparation method thereof, belonging to the manufacturing field of a semiconductor device. The method uses TiO2 for replacing the traditional SiO2 and being taken as the gate dielectric of the MOS structure; electron beam evaporation is adopted, annealing treatment is carried out on the TiO2 under the oxygen atmosphereto obtain the TiO2 film of anatase having the stoichiometric proportion of 1 / 2. The gate dielectric TiO2 film prepared by the method has dense film forming quality and even surface; the MOS structuretaking the TiO2 film as the gate dielectric has C-V curved line taking on good curve characteristic; under the electronic and gamma irradiation, the C-V curved line has no obvious drift and deformation; in the process of irradiation, the quantivalency of Ti ion is changed, and the generated negative charges catch the positive charges generated by central compensating irradiation, thus the irradiation influence of various high-energy rays in the irradiation environment can be reduced, and the reinforcing effect of irradiation resistance can be achieved.

Description

technical field [0001] The invention relates to a gate dielectric with a MOS structure and a preparation method thereof, in particular to a method using TiO 2 instead of SiO 2 TiO as gate dielectric in MOS structure 2 A thin film and a preparation method thereof belong to the field of semiconductor device manufacture. Background technique [0002] Since MOLL invented the metal-oxide-semiconductor (MOS) structure as a variable capacitor in 1959, the MOS structure has become the basic unit of semiconductor devices, such as CCD, CID, solid-state imaging systems, sensors, etc. The degree of integration of semiconductor devices. However, in the environment of ionizing radiation, the performance of MOS devices will be reduced, or even fail, so the research on the radiation effect of MOS basic devices has become a very important research topic. Since the failure of the American space satellite in the Van Allen belt in the 1960s, countries have begun to pay attention to the rese...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/336C23C14/08
Inventor 刘成士赵利利伍登学廖志君范强王自磊胡又文
Owner SICHUAN UNIV