Method for preparing patterned polymer brush

A technology of polymer brushes and mixed solutions, which is applied in the field of preparation of patterned polymer brushes, can solve the problems of limited use and the influence of surface microstructure stability, and achieves fast initiation speed, simple operation and high graft density. Effect

Inactive Publication Date: 2009-10-21
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology has high requirements on the light transmittance and photosensitivity of the polymer, and the hardness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing patterned polymer brush
  • Method for preparing patterned polymer brush
  • Method for preparing patterned polymer brush

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1. Substrate treatment

[0021] Boil the silicon substrate in a mixed solution of concentrated sulfuric acid and hydrogen peroxide for 1 hour. The mass ratio of concentrated sulfuric acid and hydrogen peroxide in the mixed solution is 7:3. Then place the substrate in acetone for 30 minutes and rinse it with deionized water. , drying to remove organic matter and impurities on the surface of the substrate.

[0022] 2. Self-assembly of epoxy silane coupling agent

[0023] The cleaned and dried substrate was immersed in a 5 mM toluene solution of 3-glycidyl propoxytrimethoxysilane and allowed to stand for 12 hours. Then, the taken-out substrate was ultrasonically cleaned in toluene and acetone successively, and dried to obtain a silicon chip self-assembled by the epoxy silane coupling agent.

[0024] 3. Initiator DAB-16-TX grafting

[0025] Immerse the self-assembled substrate of the epoxy silane coupling agent in a chloroform solution with a photoinitiator DAB-16-TX con...

Embodiment 2

[0032] 1. Substrate treatment

[0033] Boil the silicon substrate in a mixed solution of concentrated sulfuric acid and hydrogen peroxide for 1.5 hours. The mass ratio of concentrated sulfuric acid to hydrogen peroxide in the mixed solution is 7:3. Then place the substrate in acetone for 20 minutes of ultrasonication. Rinse and dry to remove organic matter and impurities on the surface of the substrate.

[0034] 2. Self-assembly of epoxy silane coupling agent

[0035] The cleaned and dried silicon wafer was immersed in a 5 mM toluene solution of 3-glycidyl propoxytrimethoxysilane and allowed to stand for 12 hours. Then, the silicon chip taken out was cleaned ultrasonically in toluene and acetone successively, and then dried to obtain the self-assembled substrate of epoxy silane coupling agent.

[0036] 3. Initiator DAB-16-TX grafting

[0037] Immerse the self-assembled substrate of the epoxy silane coupling agent in a chloroform solution with a photoinitiator DAB-16-TX conc...

Embodiment 3

[0043] 1. Substrate treatment

[0044] Boil the silicon substrate in a mixed solution of concentrated sulfuric acid and hydrogen peroxide for 2 hours. The mass ratio of concentrated sulfuric acid and hydrogen peroxide in the mixed solution is 7:3. Then place the substrate in acetone for 10 minutes and rinse it with deionized water. , drying to remove organic matter and impurities on the surface of the substrate.

[0045] 2. Self-assembly of epoxy silane coupling agent

[0046] The cleaned and dried silicon wafer was immersed in a 10 mM toluene solution of 3-glycidyl propoxytrimethoxysilane and allowed to stand for 12 hours. Then, the silicon chip taken out was cleaned ultrasonically in toluene and acetone successively, and then dried to obtain the self-assembled substrate of epoxy silane coupling agent.

[0047] 3. Initiator DAB-16-TX grafting

[0048] Immerse the self-assembled substrate of the epoxy silane coupling agent in a chloroform solution with a photoinitiator DAB-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Concentrationaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing a patterned polymer brush, which belongs to the technical field of micro nano material preparation. The micron patterned polymer brush is obtained by fixing a thioxanthone photoinitiator containing coinitiator amine on the surface of a base material by covalent bond self-assembly technology, performing patterned photobleaching on the initiator through mask photoetching and performing photo-initiation monomer polymerization. The method is simple and effective, is suitable for large-scale preparation of various patterned polymer brushes, can prepare functional patterned polymer brushes and develops direction for potential application of the polymer brush.

Description

technical field [0001] The invention relates to a method for preparing a patterned polymer brush. It belongs to the technical field of micro-nano material preparation. Background technique [0002] Surface micro-nano patterning can realize artificial control of the surface properties and structure of materials, and has become a very active research hotspot at present. In particular, the patterning of surface polymers has a wide range of applications in the fields of microelectronics, chemical and biological analysis, microfluidics, photonic crystals, and biochips. The commonly used polymer patterning method is vacuum ultraviolet photolithography ("Submicron patterning of the surface of polymethyl methacrylate film", "Materials Herald: Research", April 2009 (Part 2), Volume 23, No. 4 issues). This technology has high requirements on the light transmittance and photosensitivity of the polymer, and the hardness of the polymer has a great influence on the stability of the sur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C17/30C04B41/49
Inventor 印杰姜学松贾新雁刘睿
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap