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Method for preparing field emission cathode by micromachining of 157nm deep ultraviolet laser

A field emission and deep ultraviolet technology, used in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve the problem of unsatisfactory emitter current density and emission uniformity, high cost, and insufficient color purity. and other problems, to achieve the effect of easy digital display, low production cost and good color reproducibility

Inactive Publication Date: 2011-05-11
YICHANG SENDE ELECTRICAL EQUIP MFR
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  • Application Information

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Problems solved by technology

The existing field emission array cathode cone preparation process includes dry or wet etching, coating and other processing processes. The precision of the prepared microcone array is limited, and the process is complicated, the cycle is too long, and the cost is high. The current density and emission uniformity are not ideal, which restricts the industrialization process of this type of display
[0005] In addition, from the existing research on foldable displays, at present, it is mainly focused on organic materials, such as research on organic light-emitting diodes (OLEDs), and good progress has been made, but limited by the performance of organic materials themselves, this type of display There are also some disadvantages: (1) It is easy to age and causes a short lifespan, usually only 5000 hours, which is lower than the lifespan of LCD at least 10,000 hours; (2) The color difference is poor; there is a problem of insufficient color purity, and it is not easy to display bright and rich colors. color
However, the point beam focusing processing of the femtosecond laser cannot form a flat processing effect in the depth direction, and is only suitable for cutting and drilling. Therefore, there are still certain difficulties in the precision processing of the three-dimensional microstructure of the femtosecond laser; Ultraviolet excimer pulsed laser, its working wavelength is 157nm, and its pulse width is ns level

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  • Method for preparing field emission cathode by micromachining of 157nm deep ultraviolet laser
  • Method for preparing field emission cathode by micromachining of 157nm deep ultraviolet laser
  • Method for preparing field emission cathode by micromachining of 157nm deep ultraviolet laser

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Embodiment Construction

[0022] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0023] according to figure 1 The present invention is introduced in detail:

[0024] exist figure 1 The 157nm deep ultraviolet laser source in the vertical direction is passed through CaF 2 After the lens 2 made of material converges into parallel light, it enters the sealed vacuum device 3, and the parallel laser beam 4 converged by the lens is directly directed to the mask plate 5 engraved with the shape of the cathode processing, so that only the laser beam passing through the mask plate The laser beam of the hole can be irradiated on the workpiece 6 of monocrystalline silicon material for etching. The workpiece of monocrystalline silicon material is moved through the precision processing table, and the parameters of laser processing are optimized to improve the etching efficiency and ensure the quality of processing. Then the workpiece of...

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Abstract

The invention relates to a method adopting 157nm deep ultraviolet laser as a light source for preparing a field emission cathode. The method can ideally control the state of distribution of cathodes of a field emission display and the shape and the sharpness of a pointed cone of each cathode, thereby increasing the density and the emission uniformity of cathode emission current. The technical scheme is as follows: under vacuum environment, silicon materials are irradiated by the 157nm deep ultraviolet laser matched with corresponding masking techniques so as to form a corresponding inverted-cone structure, and organic polymer materials are injected inside; and after consolidation and formation, the silicon materials are removed, thereby obtaining a folding and soft tip cone-array substrate. The method can accurately control technological processes, has low power consumption and high brightness, the prepared cathode is ultra-thin, and the state of distribution of the cathodes of the field emission display and the shape and the sharpness of the pointed cone of each cathode can be ideally controlled.

Description

technical field [0001] The invention relates to a preparation method of a field emission display (FED) cathode, especially for the emission of the cathode of the display. Background technique [0002] At present, the mainstream displays on the market include cathode ray tube displays, liquid crystal displays, and plasma displays, while field emission displays have the advantages of low power consumption, high brightness, and ultra-thin. The advantages of flat panel displays have therefore become a hot research topic. [0003] FED (Field Emission Display) can realize large-area display like PDP (Plasma Display), and it has more advantages than LCD (Liquid Crystal Display) and PDP in terms of luminous efficiency, brightness, and viewing angle. FED also has the characteristics of high resolution, good color reproducibility, good contrast, fast response, high and low temperature resistance, vibration and shock resistance, minimal electromagnetic radiation, easy to realize digit...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/02
Inventor 童杏林姜德生林凯
Owner YICHANG SENDE ELECTRICAL EQUIP MFR