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Method for preparing silicon-carbon hydride film by magnetron sputtering

A technology of magnetron sputtering coating and hydrogenated silicon carbon, which is applied in sputtering coating, ion implantation coating, metal material coating process, etc. High density effect

Inactive Publication Date: 2010-03-03
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the methods for preparing SiCx:H films by magnetron sputtering at home and abroad now use SiC alloy targets, and the stoichiometric ratio of Si and C in the films prepared by them is basically 1:1, and the thickness of the films can only be adjusted by changing the preparation temperature. optoelectronic performance, and a smaller range

Method used

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  • Method for preparing silicon-carbon hydride film by magnetron sputtering
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  • Method for preparing silicon-carbon hydride film by magnetron sputtering

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Evacuate the air pressure of the vacuum chamber to 6×10 -3 Pa, heat the single crystal Si wafer to 250°C; before coating, pass 20sccm of Ar into the vacuum chamber 1 in the furnace, when the pressure in the vacuum chamber reaches 6Pa and keeps the pressure stable at 6Pa, open the bias voltage from 3 to - 1000V bombards and cleans the vacuum chamber and substrate for 30 minutes;

[0034] After the substrate was cleaned, the Ar was turned off, and the reaction chamber was vacuumed again to 6×10 -3 Pa, through 20sccm of Ar, while passing through H 2 Gas, adjust H 2 : The flow ratio of Ar is 1:4, the air pressure in the vacuum chamber is adjusted to 0.4Pa, the bias voltage is adjusted to -100V, the control power of the Si target and the C target is turned on, and the power of the Si target is adjusted to 4kW; the power of the C target is set to Set at 4KW, the deposition time is 120min; place the grown film in a vacuum furnace for annealing at 1000°C, and the annealing t...

Embodiment 2

[0036] Evacuate the air pressure of the vacuum chamber to 8×10 -4Pa, heat the quartz plate to make its temperature 240°C; before coating, pass 16sccm of Ar into the vacuum chamber 1 in the furnace, when the pressure in the vacuum chamber reaches 4Pa and keeps the pressure stable at 4Pa, open the bias voltage from 3 to -800V to The vacuum chamber and substrate are bombarded and cleaned for 40 minutes;

[0037] After the substrate was cleaned, the Ar was turned off, and the reaction chamber was vacuumed again to 8×10 -4 Pa, through 16sccm of Ar, while passing through H 2 Gas, adjust H 2 : The flow ratio of Ar is 1:3, the air pressure in the vacuum chamber is adjusted to 0.3Pa, the bias voltage is adjusted to -100V, the control power of the Si target and the C target is turned on, and the power of the Si target is adjusted to 4kW; the power of the C target is set to Set at 8KW, the deposition time is 60min; place the grown film in a vacuum furnace for annealing at 1000°C, and ...

Embodiment 3

[0039] Evacuate the air pressure of the vacuum chamber to 5×10 -3 Pa, heat the high-speed steel sheet to 200°C; before coating, pass 24sccm of Ar into the vacuum chamber 1 in the furnace, when the pressure in the vacuum chamber reaches 8Pa and keeps the pressure stable at 8Pa, open the bias voltage from 3 to -900V Bombardment cleaning of vacuum chamber and substrate for 20 minutes;

[0040] After the substrate was cleaned, the Ar was turned off, and the reaction chamber was vacuumed again to 5×10 -3 Pa, pass into 24sccm of Ar, and pass into H at the same time 2 Gas, adjust H 2 : The flow ratio of Ar is 1:6, the air pressure in the vacuum chamber is adjusted to 0.6Pa, the bias voltage is adjusted to -100V, the control power of the Si target and the C target is turned on, and the power of the Si target is adjusted to 4kW; the power of the C target is set to Set at 0.5KW, deposition time 90min.

[0041] Such as figure 2 As shown, the surface of the hydrogenated silicon carb...

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Abstract

The invention discloses a method for preparing a silicon-carbon hydride film by magnetron sputtering. The method comprises the following steps: preprocessing a substrate, placing a pre-treated substrate in a magnetron sputtering coating device, using a plane Si target and a plane C target as resources of corresponding elements, arranging the Si and C targets on an inner wall of a furnace body oppositely, controlling sputtering yield of the targets by adjusting the power of an intermediate frequency impulse power supply; using high-purity Ar as an ionized gas, thereby ensuring effective glow discharge process; using the high-purity H2 as a reaction gas, ionizing the H2 and combining the H2 with the Si and C elements, depositing a silicon-carbon hydride film on the surface of the substrate;changing stoichiometric ratio of Si and C by changing the content of doped C, and further changing the photoelectric properties of the film. The silicon-carbon hydride film prepared by the invention can be widely applied to the fields of solar batteries, thin film transistors, light emitting diodes, ultraviolet image sensors, micro-superfluid coatings, anti-corrosion and oxidation resisting coatings and the like.

Description

technical field [0001] The present invention relates to the preparation of thin film materials, in particular to a method for preparing hydrogenated silicon carbon thin films on single crystal Si wafers, quartz wafers and high-speed steel substrates. The energy band gap of the thin films prepared by the method is continuously variable, which can effectively change the Photoelectric properties. Background technique [0002] Currently commercialized solar cells are mainly silicon series solar cells such as crystalline silicon solar cells, silicon thin film solar cells and compound solar cells. However, the high cost of crystalline silicon solar cells and compound solar cells limits their wide application, and silicon thin film cells solve the cost problem of solar cells to a large extent. [0003] Silicon thin film solar cell materials are mainly divided into amorphous silicon (a-Si:H), microcrystalline silicon (μc-Si:H), polycrystalline silicon (poly-Si:H), and nano-silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 马胜利张旭东
Owner XI AN JIAOTONG UNIV