Method for preparing film of absorbing layer of copper zinc tin selenium (CZTS) solar cell

A technology of copper, zinc, tin, selenium and solar cells, which is applied in the field of preparation of solar cell technology, can solve the problems of expensive equipment and difficulty in large-area deposition, and achieve the effect of avoiding expensive equipment and simple equipment requirements

Active Publication Date: 2010-06-16
SHANGHAI FUYI VACUUM EQUIP CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Found through literature retrieval to prior art, Kim et al published "Pulsed laser deposition ofquaternary Cu 2 ZnSnSe 4 thin films” (pulsed laser deposition to prepare Cu 2 ZnSnSe 4 Since thin film), professionals have developed pulsed laser deposition, sputtering, vacuum coating and other Cu 2 ZnSnSe 4 Preparation methods, but these methods have disadvantages such as expensive equipment and difficulty in large-area deposition

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing film of absorbing layer of copper zinc tin selenium (CZTS) solar cell
  • Method for preparing film of absorbing layer of copper zinc tin selenium (CZTS) solar cell
  • Method for preparing film of absorbing layer of copper zinc tin selenium (CZTS) solar cell

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0028] Add 0.25mmol zinc acetylacetonate, 0.25mmol tin octoate, 0.5mmol copper acetate, 1mmol selenium powder into the reaction tube, add 1.25mmol oleylamine, heat treatment at 100°C for 24 hours, dissolve the obtained product in ethanol, and centrifuge at 8000rpm for 10 minutes , remove the lower layer of precipitation, add chloroform, centrifuge at 7000rpm for 5 minutes, take the supernatant, add 0.1mL oleylamine and 2.5mL of ethanol, take the lower layer of precipitation after centrifugation at 8000rpm for 10 minutes, evaporate the solvent to obtain copper zinc tin selenium nanoparticles , the diameter of CuZnSnSe nanoparticles is 5nm.

example 2

[0030] Add 0.5mmol of zinc sulfate, 0.3mmol of tin acetate, 0.5mmol of cuprous cyanide, and 4.4mmol of selenium powder into the reaction tube, add 15mmol of oleylamine, heat at 350°C for 10 hours, and dissolve the obtained product in 3.8mL of n-butanol. Centrifuge at 8000rpm for 10 minutes, remove the lower precipitate, add 2.5ml tetrachlorethylene, centrifuge at 7000rpm for 5 minutes, take the supernatant, add 0.1mL oleylamine and 2.5mL ethylene glycol, centrifuge at 8000rpm for 10min, remove the lower layer, evaporate After drying the solvent, the copper-zinc-tin-selenium nanoparticles are obtained, and the diameter of the copper-zinc-tin-selenium nanoparticles is 8nm.

example 3

[0032] Add 0.3mmol of zinc acetate, 0.28mmol of tin bromide acetylacetonate, 0.5mmol of cuprous chloride, and 1.5mmol of selenium powder into the reaction tube, add 6mmol of oleylamine, heat at 500°C for 1 hour, and dissolve the obtained product in 2.85mL of ethyl alcohol. Diol, centrifuge at 8000rpm for 10 minutes, remove the lower layer of precipitate, add 2.5ml of n-hexane, centrifuge at 7000rpm for 5 minutes, take the supernatant, add 0.1mL oleylamine and 2.5mL of ethylene glycol, centrifuge at 8000rpm for 10 minutes, then remove the lower layer Precipitate and evaporate the solvent to obtain copper-zinc-tin-selenium nanoparticles, and the diameter of the copper-zinc-tin-selenium nanoparticles is 9 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a film of an absorbing layer of a copper zinc tin selenium (CZTS) solar cell in the technical field of solar cells. The method comprises the following steps: preparing CZTS nanoparticles; dissolving the CZTS nanoparticles in a dissolving agent to prepare CZTS nanoparticle slurry through ultrasonic dispersion treatment; coating the CZTS nanoparticle slurry on a substrate to carry out heat treatment on the substrate so as to prepare the film of the absorbing layer of the CZTS solar cell. The method overcomes the defects of expensive equipment, difficult deposition in large area and the like, and has the advantages of no pollution, simple equipment requirement and industrial large-scale production.

Description

technical field [0001] The invention relates to a preparation method in the technical field of solar cells, in particular to a preparation method for an absorbing layer thin film of a copper-zinc-tin-selenium solar cell. Background technique [0002] Copper Zinc Tin Selenium (Cu 2 ZnSnSe 4 , the English abbreviation is CZTSe) the bandgap width is very close to the optimal bandgap width (1.5eV) required by semiconductor solar cells. And the material is to replace the copper indium gallium selenide (Cu 2 InGaSe 2 , the English abbreviation is CIGS), the indium and gallium elements in CIGS are environmentally friendly and are one of the candidate materials to replace the absorber layer of copper indium gallium selenide solar cells. [0003] Found through literature retrieval to prior art, Kim et al published "Pulsed laser deposition ofquaternary Cu 2 ZnSnSe 4 thin films” (pulsed laser deposition to prepare Cu 2 ZnSnSe 4 Since thin film), professionals have developed pu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 魏浩苏言杰郭炜张亚非王艳艳
Owner SHANGHAI FUYI VACUUM EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap