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Preparation method of n-type crystalline silicon

A crystalline silicon, n-type technology, applied in the field of crystalline silicon growth, can solve problems such as reducing the comprehensive electrical properties of silicon wafers, and achieve the effects of improving yield, reducing manufacturing costs, and reducing deviation range

Inactive Publication Date: 2010-08-25
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this compensation material meets the requirements of battery preparation in terms of resistivity, it reduces the comprehensive electrical properties of the silicon wafer

Method used

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  • Preparation method of n-type crystalline silicon
  • Preparation method of n-type crystalline silicon
  • Preparation method of n-type crystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The n-type polycrystalline silicon ingot is prepared by directional solidification under the action of a DC electric field, see Figure 3, and the following steps are used to realize:

[0031] 1) Calculate the doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant.

[0032] 2) An anode 14 is arranged at the bottom of the crucible 1, silicon material and dopant are put into the crucible according to a certain ratio, then a cathode 13 is arranged above the silicon material, and the anode 14 is connected to the positive pole of the DC power supply 11 with a wire 12, and the cathode 13 Connect to the negative pole. When arranging the electrodes, pay attention to make the direction of the electric field parallel to the growth direction of the crystal. The anode 14 and the cathode 13 are made of high-purity graphite, and the wire 12 is made of high-purity molybdenum ...

Embodiment 2

[0038] Under the action of a DC electric field, the n-type single crystal silicon rod is drawn by the CZ method, see Figure 4, and the following steps are used to achieve:

[0039] 1) Calculate the doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant.

[0040] 2) The crucible 1 made of high-purity graphite is used as the cathode, and is connected to the negative electrode of the power supply 11 with a wire 12; the silicon material and the dopant are put into the crucible 1 according to a certain ratio, heated to melt the silicon material, and the temperature control system is adjusted Pulling is started, and after the necking and shouldering growth is completed and the equal-diameter growth stage is entered, the growing crystal 3 is used as the anode and connected to the positive electrode of the power supply 11 .

[0041] 3) Start to apply a DC electric field to t...

Embodiment 3

[0046] Under the action of a DC electric field, the n-type single crystal silicon rod is manufactured by the FZ method, see Figure 5, and the following steps are used to realize:

[0047] 1) Calculate the doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer. The dopant can be pre-added in the silicon rod 5 to be melted or added during the zone melting process.

[0048] 2) Assuming that the induction coil 20 moves from bottom to top, with the growing crystal 3 as the anode and the crystal to be melted 5 as the cathode, connect them to the positive pole and the negative pole of the power supply 11 with wires 12 respectively.

[0049] 3) Increase the power of the induction coil 20 to heat and melt the part of the silicon rod 5 to be melted, and then start to apply a DC electric field to the silicon liquid 2. The voltage between the electrodes is 0.1-10V or the current density is 0.1-10A / cm 2...

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Abstract

The invention discloses a preparation method of n-type crystalline silicon, which is characterized in that during the manufacturing process of a polycrystalline silicon ingot or the crystal growth process of a single crystal silicon rod, a DC electric field which is parallel with the crystal growth direction is applied on molten silicon liquid, so that doping in liquid phase are shifted to the solid-liquid interface direction; under the double action of the electric field and solidification segregation, a high-concentration area is formed in the liquid phase of a crystal growth tip, thereby improving the doping content of the follow-up grown crystal, weakening the impact of solidification segregation, obtaining the n-type polycrystalline silicon ingot or the n-type single crystal silicon rod which is uniformly doped in the crystal growth direction, reducing the deviation range of resistivity, improving the product pass rate, so as to reduce the manufacturing cost of an n-type silicon chip. The method is particularly applicable in manufacturing P-, As- or Sb-doped n-type polycrystalline silicon ingots or n-type single crystal silicon rods.

Description

technical field [0001] The invention relates to a method for growing crystalline silicon, in particular to a method for n-type crystalline silicon. Background technique [0002] Crystalline silicon solar cells (including monocrystalline and polycrystalline) are the mainstream products of photovoltaic power generation. The silicon wafers used to produce batteries are obtained from polycrystalline silicon ingots or monocrystalline silicon rod slices. It is completed in the production process of single crystal rods. Usually, group III elements are doped to obtain p-type semiconductors during the growth of crystalline silicon, and group V elements are doped to obtain n-type semiconductors. By adjusting the doping concentration, the resistivity of silicon wafers is controlled at 0.5-3Ω·cm to meet the requirements for preparing solar cells. As the doping of silicon, a shallow energy level must be formed in the band gap of silicon, and it has the characteristics of large solid sol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06
Inventor 蒋君祥徐璟玉胡建锋熊斌戴宁褚君浩
Owner 上海太阳能电池研究与发展中心