Gas purification method

A refining method and gas technology, applied in the direction of separation methods, gas treatment, chemical instruments and methods, etc., can solve the problems of not being disclosed

Inactive Publication Date: 2010-09-01
TAIYO NIPPON SANSO CORP +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, the inventions exemplified in the above-mentioned patent documents all have the volume concentration of impurities contained in the gas to be purified at the % level, and there is no disclosure that the purification of the impurity volume concentration at the ppm level can be performed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas purification method
  • Gas purification method
  • Gas purification method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] (Example 1) Gas purification containing high-concentration impurities

[0055] In Example 1, using figure 1 The carbon membrane module shown is used for the purification of gases containing high concentrations of impurities. The specifications of carbon membrane modules are as follows. Outer diameter of hollow filamentary carbon membrane tube: 0.525mm, length of hollow filamentary carbon membrane tube: 85mm, number of hollow filamentary carbon membrane tubes: 13, total surface area of ​​hollow filamentary carbon membrane tube: 18.22cm 2 . The hollow-fiber carbon membrane is produced by forming and carbonizing an organic polymer membrane made of polyimide (aromatic polyimide) as a raw material.

[0056] The carbon membrane module was maintained at 25°C, and the supply gas pressure was set to 0.5 MPaG with a back pressure regulator at the non-permeated gas outlet.

[0057] (a) A gas mixed with 500 sccm of ammonia gas and 500 sccm of impurity hydrogen was supplied to t...

Embodiment 2

[0064] (Example 2) Gas purification containing low-concentration impurities

[0065] In Example 2, using figure 1 The carbon membrane module shown, refines a gas containing low levels of impurities. The specifications of carbon membrane modules are as follows. Outer diameter of hollow filamentary carbon membrane tube: 0.39mm, length of hollow filamentary carbon membrane tube: 117mm, quantity of hollow filamentary carbon membrane tube: 38 pieces, total surface area of ​​hollow filamentary carbon membrane tube: 54.9cm 2 . The hollow-fiber carbon membrane is produced by forming an organic polymer membrane made of polyphenylene oxide (PPO) and carbonizing it after heat treatment.

[0066] The carbon membrane module was maintained at 70°C, and the supply gas pressure was set to 0.45 MPaG with a back pressure regulator at the non-permeated gas outlet.

[0067] (a) A gas containing 50 sccm of impurity hydrogen (14390 ppb) / helium mixed with 450 sccm of ammonia gas was supplied to ...

Embodiment 3

[0075] (Example 3) Gas purification containing low-concentration impurities

[0076] In Example 3, using figure 1 The carbon membrane module shown, refines a gas containing low levels of impurities. The specifications of carbon membrane modules are as follows. Outer diameter of hollow filamentary carbon membrane tube: 0.20mm, length of hollow filamentary carbon membrane tube: 120mm, quantity of hollow filamentary carbon membrane tube: 100 pieces, total surface area of ​​hollow filamentary carbon membrane tube: 76.9cm 2 . The hollow-fiber carbon membrane is produced by forming an organic polymer membrane made of polyphenylene oxide (PPO) and carbonizing it after heat treatment.

[0077] The carbon membrane module was maintained at 30°C, and the supply gas pressure was set to 0.45 MPaG with a back pressure regulator at the non-permeated gas outlet.

[0078] A gas mixed with 200 sccm of hydrogen (9550 ppb), nitrogen (9700 ppb), methane (9200 ppb), carbon monoxide (9380 ppb) / h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Outer diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Total surface areaaaaaaaaaaa
Login to view more

Abstract

Disclosed is a gas purification method, in which at least one gas selected from the group consisting of a hydride gas, a hydrogen halide gas and a halogen gas each containing 10 ppm or less of impurities is purified by using a carbon membrane having a molecular sieving property. The method is applicable to a recycling system for collecting a used gas and re-using the gas as an ultra-high-purity semiconductor material gas, an apparatus or facility for producing an ultra-high-purity semiconductor material gas, or an apparatus or facility in which an ultra-high-purity semiconductor material gas is filled.

Description

technical field [0001] The present invention relates to a gas purification method, in particular to a gas purification method for refining silane, phosphine and other gases used as semiconductor materials by using a carbon film with molecular sieve function. [0002] This application claims priority based on Japanese Patent Application No. 2007-266495 filed on October 12, 2007 and Japanese Patent Application No. 2008-238357 filed on September 17, 2008 in Japan, and the contents thereof are incorporated herein. Background technique [0003] At present, it is more desirable to use an ultra-high purity gas with an impurity volume concentration of ppt to ppb order as a semiconductor material gas than a high-purity gas with an impurity volume concentration of ppb to ppm order. [0004] Examples of the gas used for the semiconductor material include hydride gases such as ammonia, silane, and phosphine; halide gases such as hydrogen fluoride, hydrogen chloride, and hydrogen bromide...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B01D53/22B01D69/04B01D69/08B01D71/02C01B7/00C01C1/02
CPCC01B3/503C01B7/00B01D53/228C01B2210/0045B01D2257/20B01D71/021C01B2210/0051C01B2210/0062B01D63/02Y02E60/364B01D53/22B01D2258/0216C01C1/024C01B3/04C01B2203/0405Y02E60/36B01D69/04B01D69/08B01D63/06
Inventor 宫泽让小林芳彦原谷贤治吉宗美纪
Owner TAIYO NIPPON SANSO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products