Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon substrate organic electroluminescent luminescent device and preparation method thereof

A kind of electroluminescence, electromechanical technology, applied in the direction of electric solid state device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of low hole concentration of n-type silicon and difficult anode.

Inactive Publication Date: 2010-09-22
PEKING UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, p-type silicon can be used as the anode of organic light-emitting diodes, but the hole concentration in n-type silicon is very small, so it is difficult to be used as the anode of organic light-emitting diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon substrate organic electroluminescent luminescent device and preparation method thereof
  • Silicon substrate organic electroluminescent luminescent device and preparation method thereof
  • Silicon substrate organic electroluminescent luminescent device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Example 1. Preparation of an organic electroluminescent device with a seven-layer organic and cathode film structure with a metal complex as the light-emitting layer

[0038] The device prepared in this embodiment includes an irradiated n-type silicon electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a light-transmitting cathode stacked in sequence, and the preparation method is as follows:

[0039] The n-type silicon substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 20 minutes in sequence; and soaked in 2% HF solution for 4 minutes to remove the natural oxide layer on the surface, and then began to carry out electron irradiation. The equipment used was from Beijing Normal University. BF-5 electron linear accelerator, the irradiation energy is 5MeV, the dose rate is 1.6×10 12 cm -2 the s -1 , an irradiation time of 4 minutes, followed by a 1x...

Embodiment 2

[0042] Example 2. Preparation of a five-layer organic electroluminescent device with an independent phosphorescent emitting layer

[0043] The device includes sequentially stacked irradiated n-type silicon electrodes, a hole transport layer, a light emitting layer, an electron transport layer and a light-transmitting cathode, as follows:

[0044] The anode and substrate are made of n-type silicon irradiated by electrons, the irradiation energy is 5MeV, and the dose rate is 1.6×10 12 cm -2 the s -1 , the irradiation time is 30 minutes; after that, at 1x10 -5 The hole transport layer, the light-emitting layer, the electron transport layer and the cathode are sequentially thermally evaporated on the n-type silicon under a vacuum of Pa, wherein the hole transport layer is about 30-70 nm thick NPB (N,N'-diphenyl base-N-N'bis(1-naphthyl)-1,1'diphenyl-4,4'-diamine); the phosphorescent material bis(2-phenylpyridine) iridium acetylacetonate [(ppy ) 2 Ir(acac)] and host material (4...

Embodiment 3

[0047] Example 3, organic electroluminescent device with small organic molecules as fluorescent light-emitting layer

[0048] The device includes sequentially stacked irradiated n-type silicon electrodes, a hole transport layer, a light emitting layer, an electron injection layer and a light-transmitting cathode, as follows:

[0049] The anode and substrate are made of n-type silicon irradiated by electrons, the irradiation energy is 5MeV, and the dose rate is 1.6×10 12 cm -2 the s -1 , the irradiation time is 30 seconds; after that, at 1x10 -5 The hole transport layer, the light emitting layer, the electron injection layer and the cathode are sequentially thermally evaporated and evaporated on the n-type silicon under the vacuum of Pa. The hole transport layer is about 30-70 nm thick TPD (N,N'-diphenyl-N-N'bis(1-naphthyl)-1,1'diphenyl-4,4'-bis amine); the light-emitting layer is AlQ doped with 1% mass content of coumarin (Quinacridone, QuinacridoneQA), with a thickness of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a silicon substrate organic electroluminescent luminescent device and a preparation method thereof, and belongs to the field of the organic electroluminescent luminescent device. The invention can cause an n-shaped silicon to be used as the anode of an organic light-emitting diode by irradiating an n-shaped silicon wafer. The device irradiates the n-shaped silicon by the using the low-energy electrons or gamma rays and the like, draws deep energy level defects into the n-shaped silicon and plays an effective role in the generation of the center, thus increasing the luminous efficiency of the organic light-emitting diode formed by the n-shaped silicon and causing the n-shaped silicon to be used the anode of the organic light-emitting diode. The invention causes the applied range of the light-emitting diode with the n-shaped silicon as the anode; simultaneously, the method can be generalized into organic light-emitting diodes with other types of n-shaped semiconductor materials as the anode.

Description

[0001] technical field [0002] The invention belongs to the field of organic electroluminescent devices, in particular to a silicon-based organic electroluminescent device. The invention also relates to a preparation method of the silicon-based organic electroluminescence device. [0003] Background technique [0004] Silicon is a key material for microelectronics, but it has long been considered unsuitable for light sources that play a key role in photonics, because silicon has an indirect bandgap structure, and its luminous efficiency is much lower than that of direct bandgap semiconductors. In 1990, after Canham (Appl. Phys. Lett. 57, 1046) discovered the strong photoluminescence of porous silicon at room temperature, an upsurge of silicon-based luminescence research was set off internationally. However, the electroluminescence efficiency of the silicon-based nano-silicon / silicon oxide composite structure is generally low, and there is still a considerable distance fro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
Inventor 秦国刚李延钊冉广照徐万劲
Owner PEKING UNIV