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Preparation method of crystal silicon photovoltaic cell with deep energy level impurities

A photovoltaic cell and deep energy level technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as low photoelectric conversion efficiency, achieve the effect of enhancing absorption and improving photovoltaic efficiency

Inactive Publication Date: 2012-12-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] On the other hand, Si is also used in the preparation of thermal photovoltaic cells [4] , but the photoelectric conversion efficiency is low due to its wide band gap

Method used

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  • Preparation method of crystal silicon photovoltaic cell with deep energy level impurities
  • Preparation method of crystal silicon photovoltaic cell with deep energy level impurities
  • Preparation method of crystal silicon photovoltaic cell with deep energy level impurities

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preparation example Construction

[0048] Based on the above realization principles, the present invention provides a method for preparing a crystalline silicon photovoltaic cell with a deep energy level of impurities, such as figure 1 As shown, the method includes:

[0049] Step 1: In weak n-type (n - ) The surface of the Si substrate is textured to form a textured surface;

[0050] Step 2: preparing an n-type Si layer with deep energy levels of impurities on the textured surface;

[0051] Step 3: Cover the p-type semiconductor film on the n-type Si layer with impurity deep energy level, and form a pn junction with the n-type Si layer;

[0052] Step 4: Perform high-temperature annealing treatment on the doped Si sheet forming the pn junction to activate the impurities;

[0053] Step 5: Prepare a p-electrode on the p-type semiconductor film, prepare an n-electrode on the n-type Si layer, and prepare an n-electrode on the lower surface of the weak n-type Si substrate.

[0054] Wherein, the step 1 includes: u...

Embodiment

[0062] with NaOH and C 2 h 5 OH mixed alkaline solvent corrodes the Si surface, because it has different corrosion rates for each (hkl) crystal plane of Si, so it can form a textured surface with a pyramidal surface structure; or use a pulse width less than 100 picoseconds, a frequency less than 5kHz, and an energy density About 4kJ / m 2 The ultrafast laser scans the Si surface in the atmosphere of sulfur (S), selenium (Se) and tellurium (Te) elements, so that it forms a textured surface of micron-sized crystal cones;

[0063] Ion implantation is adopted, that is, the ionized elements are separated by a mass spectrometer, and a single element of sulfur (S), selenium (Se), and tellurium (Te) is uniformly implanted into the Si surface layer after vertical high-voltage acceleration and lateral bias scanning. ; or adopt thermal diffusion, that is, uniformly dope the above single element into the Si surface layer through a uniform high-temperature furnace body and a continuously i...

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Abstract

The invention discloses a preparation method of a crystal silicon photovoltaic cell with deep energy level impurities, which comprises the following steps: step 1: texturing on the surface of a weak n-type Si substrate, and forming texture; step 2: preparing an n-type Si layer with deep energy level impurities on the texture; step 3: covering a p-type semiconductor film on the n-type Si layer with deep energy level impurities, and forming a pn junction with the n-type Si layer; step 4: carrying out high temperature annealing treatment for the doped Si chip forming the pn junction so as to activate the impurities; and step 5: preparing a p electrode on the p-type semiconductor film, preparing a first n electrode on the n-type Si layer, and preparing a second n electrode on the lower surface of the weak n-type Si substrate. The invention can realize that Si absorbs more infrared light, and the built-in electric field of the cell can be regulated, so that the cell is covered with the n-type Si layer with deep energy level impurities, thereby separating photo-induced electron-hole pairs in the region; and the invention can solve the output problem of photo-induced carriers on the deep energy level impurities, thereby improving the photovoltaic efficiency of the whole solar cell.

Description

technical field [0001] The invention relates to the technical field of Si optoelectronic materials, in particular to a method for preparing a crystalline silicon photovoltaic cell with impurity deep energy levels. Background technique [0002] Silicon solar cells are the main body in today's photovoltaic market, and crystalline silicon solar cells have the highest conversion efficiency, with a world record of 24.7%. It has high quantum efficiency in the 600-900nm band, but it cannot absorb because of the forbidden band width above 1100nm, and cannot fully utilize the energy of a single photon below 300nm. Therefore, in order to continue to improve battery efficiency, it is necessary to work hard on long-wave and short-wave bands. [0003] Multi-level light absorption is a broad-spectrum light absorption method [1] , Whether multi-level light absorption can be achieved in Si materials has always been of great interest to the photovoltaic community. 1959Fan and Ramdas [2] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 韩培德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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