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Plasma immersion ion injection method for improving anti-oxidation property of copper film

A plasma immersion and anti-oxidation technology, applied in ion implantation plating, coating, metal material coating process, etc., can solve the problems of increased production cost, environmental pollution, complicated preparation process, etc. Controllability, Antioxidant Improvement, Highly Environmentally Friendly Effects

Inactive Publication Date: 2010-12-22
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Both of the above two technologies have proposed a copper film preparation process, but the preparation process is relatively complicated, and a solution must be used in the copper film preparation process, which is likely to cause environmental pollution and increase subsequent production costs, and the prepared copper film is not taken. Other subsequent processing, the resulting copper film is easily oxidized in the use environment

Method used

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  • Plasma immersion ion injection method for improving anti-oxidation property of copper film
  • Plasma immersion ion injection method for improving anti-oxidation property of copper film
  • Plasma immersion ion injection method for improving anti-oxidation property of copper film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The substrate is a 2cm×2cm ordinary glass slide. Take some slides of this specification, degrease them, then ultrasonically clean them in deionized water, anhydrous acetone and anhydrous ethanol in turn, dry them, and then fix them on a magnetron sputtering On the sample stage of the sputtering equipment, pure copper with a purity of 99.99% is used as the target material, and the linear distance between the target material and the center of the sample stage is 10 cm, and the magnetron sputtering equipment is sealed. Before depositing the copper film, the glass slide needs to be cleaned by sputtering. The process is as follows:

[0038] Vacuum down to 4×10 -3 Pa, the Ar working gas is introduced, the flow rate is 20SCCM, and the working pressure is maintained at 4×10 -1 Pa, open voltage to 500V (at this time the copper target is temporarily shielded by a partition), and the cleaning time is as long as 5min.

[0039] After cleaning, remove the copper target separator, m...

Embodiment 2

[0047] Referring to Example 1, the glass slide with the copper film was fixed on the sample stage of the plasma immersion ion implantation equipment, and the airtight equipment was evacuated to 5 × 10 -4 Pa, and then carry out Al plasma immersion ion implantation, other implantation parameters are as follows:

[0048] Duty cycle: 0.70; workpiece negative bias: -30kV; injection dose: 2×10 17 ions-cm -2 .

[0049] Place the injected copper film in a heating furnace for oxidation, and the parameters are the same as the oxidation process in Example 1.

[0050] According to the XPS results, the maximum oxygen depth of the implanted copper film surface layer after oxidation is 120nm, as shown in the attached figure 1 shown;

[0051] The four-probe test results show that the surface resistance of the implanted copper film before oxidation is 0.37ohm / sq, and the resistance after oxidation is 1.65ohm / sq.

Embodiment 3

[0053] The glass slide with the copper film in Example 1 is fixed on the sample stage of the plasma immersion ion implantation equipment, and the airtight equipment is evacuated to 5 × 10 -4 Pa, and then carry out Al plasma immersion ion implantation, other implantation parameters are as follows:

[0054] Duty cycle: 0.05; workpiece negative bias: -30kV; injection dose: 2×10 17 ions-cm -2 .

[0055] Place the injected copper film in a heating furnace for oxidation, and the parameters are the same as the oxidation process in Example 1.

[0056] According to the XPS results, the maximum depth of oxygen injected into the surface layer of copper film after oxidation is about 30nm. figure 2 shown;

[0057] The four-probe test results show that the surface resistance of the implanted copper film before oxidation is 0.42ohm / sq, and the resistance after oxidation is 0.58ohm / sq.

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Abstract

The invention discloses a plasma immersion ion injection method for improving anti-oxidation property of a copper film in the technical field of material surface solidification, which comprises the following steps of: ultrasonically washing a plurality of glass substrates with de-ionized water and an organic solvent in sequence and drying for latter use; fixing the washed glass substrates on a sample platform of magnetron sputtering equipment and preparing the copper film by using a deposition process; and taking out the uniform copper film obtained by deposition and placing the uniform copper film on plasma immersion ion injection equipment, performing ion injection treatment by using a metal rod as a target source, and oxidizing the obtained copper film in a heating furnace. The plasma immersion ion injection method can obviously improve the anti-oxidation property of the copper film and avoid the problem on the bonding force of film bases between a modified layer and the copper film; and plasma ion immersion injection technology is novel and highly environmentally-friendly material surface modification technology, and magnetron sputtering technology for preparing the copper film is also nuisanceless film deposition technology, so that the plasma immersion ion injection method is highly environmentally-friendly.

Description

technical field [0001] The invention relates to a method in the technical field of material surface modification, in particular to a plasma immersion ion implantation method for improving the oxidation resistance of copper films. Background technique [0002] Copper has excellent electrical conductivity (the resistivity of the bulk material is 1.69 μΩ cm, so it is widely used as a conductive material, especially copper film, which has been widely used in the electronics industry, such as for VLSI and as Thin film transistors, etc. However, the copper film is easily oxidized at room temperature to form copper oxide or cuprous oxide, and when used in electronic components or electronic circuits, the temperature will rise due to the passing of current, which will make the oxidation of the copper film more serious. The oxidation of copper will eventually affect the conductivity of copper electronic components, making electronic components or circuits invalid; in addition, the su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/48C23C14/35C23C14/16
Inventor 蔡珣安全长聂璞林
Owner SHANGHAI JIAO TONG UNIV
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