Process for flattening diamond film by utilizing compound diamond-like carbon (DLC) film
A diamond thin film and flattening technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of diamond surface pollution, high investment and processing cost, easy residual graphite, etc., to increase polishing area, improved film quality, and the effect of a simple preparation method
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Embodiment 1
[0022] 1) Using a single-sided polished silicon wafer as the substrate, use a microwave plasma chemical vapor deposition device (SEKI Corporation of Japan, model AX6550), using a deposition process, place the pretreated silicon wafer in the reaction chamber, and react with the mixed gas The ratio is 91% (H 2 ): 1.5% (O 2 ): 7.5% (CH 4 ), the microwave power is 4KW, the working pressure is 9.3KPa, the deposition is 10h, and the thickness of the final deposited diamond film is 20-30μm.
[0023] 2) Deposit a diamond-like carbon film of 10 μm-15 μm on the prepared diamond film, which is prepared by an electron cyclotron resonance microwave plasma chemical vapor deposition device (developed by Shenyang Scientific Instrument, Chinese Academy of Sciences), with a total gas flow of 50 sccm, wherein CH 4 40sccm, H 2 The deposition pressure is 10sccm, the deposition pressure is 5Pa, the deposition time is 2h, and the negative bias voltage of the sample stage is 400V.
[0024] 3) Pla...
Embodiment 2
[0026] 1) On a single-sided polished silicon wafer, use HFCVD (Shanghai Jiaoyou Masonry Coating Co., Ltd. model DB300) to deposit a diamond film. The specific process is: the reaction pressure is 2.5-3.0KPa, the mixed gas ratio: acetone: H 2 =3.0%:97.0%, the distance between the filament and the substrate is 8mm, the substrate temperature is 950°C, the deposition is 6h, and finally a diamond film of 20μm-30μm is grown.
[0027] 2) Deposit a diamond-like carbon film of 10 μm-15 μm on the prepared diamond film, which is prepared by microwave plasma chemical vapor deposition (Japan SEKI company, model: AX6550), microwave power 3KW, total gas flow rate is 40sccm, wherein CH 4 30sccm, H 2 It is 10sccm, the deposition pressure is 4.5KPa, and the deposition time is 4h.
[0028] 3) Adopt planarized sample preparation equipment (Shenyang Kejing Automation Equipment Co., Ltd., model UNIPOL-1260 improved type), with B 4 C is abrasive, KMnO 4 and KNO 3 In order to mix the oxidant, th...
Embodiment 3
[0030] Step 1), 2) are identical with embodiment 1.
[0031] 3) Planarized sample preparation equipment (Shenyang Kejing Automation Equipment Co., Ltd., improved model UNIPOL-1260) was used, with corundum as the abrasive, KMnO 4 As an oxidant, the prepared diamond composite film is subjected to chemical mechanical polishing with a pressure of 8 pounds per square inch (psi), a polishing table speed of 50r / min, a polishing head speed of 250r / min, and a polishing table temperature of 300°C. 40min. After testing, the roughness of the diamond film is 1.374nm.
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