Process for flattening diamond film by utilizing compound diamond-like carbon (DLC) film

A diamond thin film and flattening technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of diamond surface pollution, high investment and processing cost, easy residual graphite, etc., to increase polishing area, improved film quality, and the effect of a simple preparation method

Inactive Publication Date: 2011-01-05
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The efficiency of purely mechanical diamond powder grinding is low, and the surface is prone to scratches and micro-cracks; the pure chemical polishing method is expensive and the pollution of the diamond surface is inevitable; abrasive water jet method, ion beam polishing, plasma polishing equipment The input and processing costs are high; the surface of the laser polishing method will undergo some denaturation, and graphite will easily remain, which will affect the performance of the diamond film after processing.
These removal methods cannot overcome the high hardness of the diamond film, and the uniformity and efficiency of processing need to be further improved, and its commercial and industrial application prospects are not optimistic.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Using a single-sided polished silicon wafer as the substrate, use a microwave plasma chemical vapor deposition device (SEKI Corporation of Japan, model AX6550), using a deposition process, place the pretreated silicon wafer in the reaction chamber, and react with the mixed gas The ratio is 91% (H 2 ): 1.5% (O 2 ): 7.5% (CH 4 ), the microwave power is 4KW, the working pressure is 9.3KPa, the deposition is 10h, and the thickness of the final deposited diamond film is 20-30μm.

[0023] 2) Deposit a diamond-like carbon film of 10 μm-15 μm on the prepared diamond film, which is prepared by an electron cyclotron resonance microwave plasma chemical vapor deposition device (developed by Shenyang Scientific Instrument, Chinese Academy of Sciences), with a total gas flow of 50 sccm, wherein CH 4 40sccm, H 2 The deposition pressure is 10sccm, the deposition pressure is 5Pa, the deposition time is 2h, and the negative bias voltage of the sample stage is 400V.

[0024] 3) Pla...

Embodiment 2

[0026] 1) On a single-sided polished silicon wafer, use HFCVD (Shanghai Jiaoyou Masonry Coating Co., Ltd. model DB300) to deposit a diamond film. The specific process is: the reaction pressure is 2.5-3.0KPa, the mixed gas ratio: acetone: H 2 =3.0%:97.0%, the distance between the filament and the substrate is 8mm, the substrate temperature is 950°C, the deposition is 6h, and finally a diamond film of 20μm-30μm is grown.

[0027] 2) Deposit a diamond-like carbon film of 10 μm-15 μm on the prepared diamond film, which is prepared by microwave plasma chemical vapor deposition (Japan SEKI company, model: AX6550), microwave power 3KW, total gas flow rate is 40sccm, wherein CH 4 30sccm, H 2 It is 10sccm, the deposition pressure is 4.5KPa, and the deposition time is 4h.

[0028] 3) Adopt planarized sample preparation equipment (Shenyang Kejing Automation Equipment Co., Ltd., model UNIPOL-1260 improved type), with B 4 C is abrasive, KMnO 4 and KNO 3 In order to mix the oxidant, th...

Embodiment 3

[0030] Step 1), 2) are identical with embodiment 1.

[0031] 3) Planarized sample preparation equipment (Shenyang Kejing Automation Equipment Co., Ltd., improved model UNIPOL-1260) was used, with corundum as the abrasive, KMnO 4 As an oxidant, the prepared diamond composite film is subjected to chemical mechanical polishing with a pressure of 8 pounds per square inch (psi), a polishing table speed of 50r / min, a polishing head speed of 250r / min, and a polishing table temperature of 300°C. 40min. After testing, the roughness of the diamond film is 1.374nm.

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Abstract

The invention relates to a process for flattening a diamond film by utilizing a compound diamond-like carbon (DLC) film. The process comprises the following steps of: (1) preparing a diamond film by adopting a conventional deposition process, wherein a silicon wafer of which one side is polished is used as a substrate; (2) depositing a DLC film on the silicon wafer deposited with the diamond film by adopting a chemical vapor deposition method; and (3) flattening the DLC film by adopting a chemical and mechanical polishing method so as to obtain a highly flattened diamond film. The preparation method has the advantages of simplicity, low removal quantity, small surface hardness, high polishing efficiency, and the like, overcomes the defects of various removal type polishing processes, increases the polishing area and improves the film quality; the grinding material of non-diamond powder is adopted, thus the cost can be greatly reduced; proved by experiments, the diamond film of which the surface roughness Ra is smaller than 1.5nm can be obtained at high efficiency with original properties unchanged.

Description

(1) Technical field [0001] The invention relates to a micro-nano electronic ultra-precision processing technology, in particular to a technology for flattening a diamond film by using a diamond-like composite film. (2) Background technology [0002] The diamond film prepared by the conventional chemical vapor deposition method has a large grain size and grows in a columnar or conical shape. The roughness is usually several microns or even more than ten microns. The orientation of diamond particles is different, and at the same time, it is difficult to find harder materials to process the high-hardness surface, which brings great difficulties to surface treatment and limits the popularization and application of diamond films. Therefore, many studies have been devoted to improving the surface roughness of conventional diamond thin films. [0003] Existing diamond film planarization technologies such as purely mechanical diamond powder grinding, thermochemical polishing, chemi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/56
Inventor 张楷亮王莎莎王芳曲长庆孙大智
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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