Cleaning agent for silicon materials and method for cleaning silicon materials

Abstract

The invention discloses formulas of a cleaning agent SEH-1, a cleaning agent SHE-2 and a cleaning agent SHE-3, wherein the cleaning agent SEH-1 comprises the following components in parts by weight: 5-25 parts of fatty alcohol polyoxyethylene ether, 3-15 parts of alkyl phenyl polyoxyethylene ether, 2-8 parts of alkylolamide, 0.5-7 parts of ethylene glycol alkyl ether, 0.1-5 parts of chelating agent, 5-10 parts of chloracid, 0.5-5 parts of H2O2 (hydrogen peroxide) and the balance of deionized water, and the total number of parts is 100; the cleaning agent SHE-2 comprises the following components in parts by weight: 4-15 parts of coconut oil alkyl amide phosphate, 3-15 parts of triethanolamine oleic soap, 1-5 parts of triethanolamine, 0.1-5 parts of aminotriacetic acid, 1-5 parts of potassium hydroxide and the balance of the deionized water, and the total number of parts is 100; and the cleaning agent SHE-3 comprises the following components in parts by weight: 5-10 parts of acetic acid, 0.5-10 parts of citric acid, 0.1-5 parts of sorbitol and the balance of the deionized water, and the total number of parts is 100. The invention further discloses a method for cleaning silicon materials by utilizing the three cleaning agents. The method is completely in line with the cleaning requirement for production of solar grade single crystal silicon and does not pollute the environment.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal manufacturing, and specifically relates to a silicon material cleaning agent, and also relates to a method for cleaning silicon material by using the silicon material cleaning agent. Background technique [0002] In the manufacturing process of solar-grade silicon single crystal, primary polycrystalline silicon or regenerated silicon material needs to be used as raw material, which is melted in a single crystal furnace and drawn into a single crystal rod. The silicon material used for drawing single crystal rods has higher purity requirements, but the surface of the silicon material will be polluted during processing, transportation, and storage; therefore, it must be cleaned before using these silicon materials, mainly to remove organic matter and oxide layers. Contamination with metal ions, in particular, it is required that no metal impurities remain to the greatest extent. [0...

AI Technical Summary

Problems solved by technology

The strong acid and strong alkali used in the traditional cleaning method are highly corrosive, which is harmful to the operator. The post-treatment of waste gas and waste liquid is cumbersome and seriously pollutes the environment. Due to the chemical reaction between the strong acid or strong alkali and the surface of the silicon material, continuous corrosion , Peel off the surface layer, resulting in a large loss of silicon material, fast chemical corrosion, poor process stability, and high cleaning costs