High-strength high-conductivity nanocrystal copper material and preparation method thereof
A nanocrystalline, high conductivity technology, applied in the field of high strength and high conductivity nanocrystalline copper materials and preparation, can solve the problems of copper conductivity decline, magnetic influence, low strength, etc., to achieve comprehensive mechanical properties improvement, applicability Strong, highly conductive effect
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Embodiment l
[0025] 1. Preparation of nanocrystalline thin film Cu material by magnetron sputtering technology:
[0026] 1) Using magnetron sputtering technology to prepare nanocrystalline Cu thin film materials: the substrate material is p-Si (111) substrate with single-sided polishing. Since the surface of Si (111) is basically clean, ultrasonic cleaning is used. method. The steps are as follows: first use 10% HF acid and acetone to remove the dirt on the surface of the substrate, and then wash it with alcohol and deionized water. Each step generally requires ultrasonic vibration for about 20 minutes, and finally put the substrate into a drying oven at 100°C. Dry in the box for later use. The experiment uses a copper target with a purity of 99.999%, a diameter of 60mm, and a thickness of about 3mm. The sputtering gas is high-purity argon (Ar purity is 99.999%), the argon flow rate is 45 sccm, and the background vacuum of the system during coating is -5 Pa, the working pressure is 0.5Pa,...
Embodiment 2
[0032] 1) Using magnetron sputtering technology to prepare nanocrystalline Cu thin film materials: the substrate material is p-Si (111) type substrate with single-sided polishing. Since the surface of Si (111) is basically clean, ultrasonic cleaning is used. The method, the steps are as follows: first use 10% HF acid and acetone to remove the dirt on the surface of the substrate, and then clean it with alcohol and deionized water. Each step generally requires ultrasonic oscillation for about 20 minutes, and finally put the substrate at 100°C Dry it in a drying oven for later use. The experiment uses a copper target with a purity of 99.999%, a diameter of 60mm, and a thickness of about 3mm. The sputtering gas is high-purity argon (Ar purity is 99.999%), the argon flow rate is 45 sccm, and the background vacuum of the system during coating is -5 Pa, the working pressure is 0.5Pa, the target-base distance is 90mm, the substrate is p-type Si (111) polished on one side, the substrat...
Embodiment 3
[0035] 1) Using magnetron sputtering technology to prepare nanocrystalline Cu thin film materials: the substrate material is p-Si (111) substrate with single-sided polishing. Since the surface of Si (111) is basically clean, ultrasonic cleaning is used. The method, the steps are as follows: first use 10% HF acid and acetone to remove the dirt on the surface of the substrate, and then clean it with alcohol and deionized water. Each step generally requires ultrasonic oscillation for about 20 minutes, and finally put the substrate at 100°C Dry in a dry oven for standby. The experiment uses a copper target with a purity of 99.999%, a diameter of 60mm, and a thickness of about 3mm. The sputtering gas is high-purity argon (Ar purity is 99.999%), and the argon flow rate is 45sccm. The background vacuum of the system during coating is -5 Pa, the working pressure is 0.5Pa, the target-base distance is 90mm, the substrate is p-type Si (111) polished on one side, the substrate temperature ...
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