Method for growing zinc oxide monocrystalline under hydrothermal condition by utilizing mineralizer
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANDONG UNIV
- Publication Date
- 2013-01-02
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Abstract
Description
Technical field
[0001] The invention relates to a method for growing a zinc oxide single crystal under hydrothermal conditions by using a mineralizer, and belongs to the field of crystal materials. Background technique
[0002] Zinc oxide is an important wide band gap II-VI group compound semiconductor material. It has the characteristics of high electron migration saturation rate, low dielectric constant, and good thermal stability. It is used to manufacture blue and green light-emitting devices, and is resistant to radiation and high frequency. , High-power and high-density integrated electronic device candidate material; in the field of optoelectronics, zinc oxide can also be used in solar cells, color sensors and other light collection devices; in the field of piezoelectric, zinc oxide can be used in piezoelectric conversion and sensor devices. In addition, due to the vigorous development of nanotechnology, the coupling effect between various properties of zinc oxide enables ...