Method for preparing single-layer graphene

A single-layer graphene and graphene technology, applied in the field of two-dimensional thin film material preparation, can solve problems such as methods that are not suitable for large-scale preparation and application of industrial production, difficult to reuse, and expensive for single-crystal metal substrates. The effect of controllable growth of mass and large area and uniform distribution of layers

Active Publication Date: 2011-07-27
PEKING UNIV
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Problems solved by technology

[0005] In the existing literature reports, in order to effectively control the number of layers of graphene, people have tried different metal substrates for growth. The low-pressure chemical vapor deposition method on copper foil can prepare single-layer graphene with a uniformity of 95%. However, the preparation conditions are harsh, and the formation of multilayer graphene cannot be completely avoided.
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  • Method for preparing single-layer graphene
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  • Method for preparing single-layer graphene

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Embodiment 1

[0035] Embodiment 1, preparation monolayer graphene

[0036] 1) Select a molybdenum foil with a thickness of 200 μm as the metal substrate, and use the electron beam evaporation method, in a vacuum of 1×10 -7 mbar, a polycrystalline nickel film with a thickness of 200nm is vapor-deposited on the molybdenum foil metal substrate at a temperature of 25°C to obtain an alloy substrate;

[0037] 2) In hydrogen gas (flow rate of 400 sccm) and argon gas (flow rate of 500 sccm), the alloy substrate obtained in step 1) was heated from room temperature to 900° C. for 25 minutes in a tube furnace, then annealed at a constant temperature for 20 minutes, and then subjected to Heat up to the catalytic growth temperature of 1000° C. in 5 minutes. At this time, feed carbon source methane (flow rate is 50 sccm) and stay for 5 minutes to grow. The volume ratio of methane gas to hydrogen gas is 16:1, and then 15° C. / min The cooling rate is reduced to 700°C, the heater is turned off, and the temp...

Embodiment 2

[0044] Embodiment 2, prepare single-layer graphene (thinning the thickness of metal substrate to 1 / 8 of embodiment 1, increasing the carbon source concentration to 8 times of embodiment 1 during growth, extending the growth time to 6 times of embodiment 1)

[0045] 1) Select a molybdenum foil with a thickness of 25 μm as the metal substrate, and use the electron beam evaporation method, in a vacuum of 1×10 -7 mbar, a polycrystalline nickel film with a thickness of 200nm is vapor-deposited on the molybdenum foil metal substrate at a temperature of 25°C to obtain an alloy substrate;

[0046] 2) In hydrogen gas (flow rate of 400 sccm) and argon gas (flow rate of 500 sccm), the alloy substrate obtained in step 1) was heated from room temperature to 900° C. for 25 minutes in a tube furnace, then annealed at a constant temperature for 20 minutes, and then subjected to Heat up to the catalytic growth temperature of 1000° C. in 5 minutes. At this time, feed carbon source methane (flow...

Embodiment 3

[0049] Embodiment 3, prepare single-layer graphene (thinning the thickness of metal substrate to 1 / 8 of embodiment 1, increase the carbon source concentration to 8 times of embodiment 1 during growth, reduce the cooling rate to 1 / 8 of embodiment 1 4)

[0050] 1) Select a molybdenum foil with a thickness of 25 μm as the metal substrate, and use the electron beam evaporation method, in a vacuum of 1×10 -7 mbar, a polycrystalline nickel film with a thickness of 200nm is vapor-deposited on the molybdenum foil metal substrate at a temperature of 25°C to obtain an alloy substrate;

[0051] 2) In hydrogen gas (flow rate of 400 sccm) and argon gas (flow rate of 500 sccm), the alloy substrate obtained in step 1) was heated to 900°C in a tube furnace, then annealed at a constant temperature for 20 minutes, and then heated to a catalytic growth temperature of 1000°C At this time, the carbon source methane (flow rate is 50sccm) is passed through for 5 minutes to grow, the volume ratio of...

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Abstract

The invention discloses a method for preparing single-layer graphene. The method comprises the following steps of: 1) preparing an alloy substrate; and 2) in the hydrogen and inert atmosphere, catalyzing to grow graphene on the surface of the alloy substrate obtained in the step 1) by a chemical vapor deposition method, thereby finishing the preparation of the single-layer graphene. The method makes use of the characteristics of two or more alloy metals in the alloy substrate, realizes control on the decomposition, diffusion and precipitation processes of a carbon source, simply and efficiently restrains the precipitation process of carbon dissolved in the metal substrate to enable the graphene to be capable of growing in a surface catalytic manner to obtain the single-layer graphene withuniform layer distribution, and is suitable for industrial production and particularly for the controllable preparation of single-layer or few-layer graphene.

Description

technical field [0001] The invention belongs to the technical field of preparation of two-dimensional thin film materials, and relates to a method for preparing single-layer graphene. Background technique [0002] Graphene is made of carbon atoms according to sp 2 Two-dimensional monoatomic layer materials formed by bonding. Graphene has many excellent properties, such as high electron mobility, long-range ballistic transport properties at room temperature, and adjustable band gap. It is considered to be a strong competitor for building a new generation of electronic device materials. Graphene's good electrical conductivity and light transmission properties make it have a very good application prospect in transparent conductive electrodes, and it is expected to be widely used in touch screens, liquid crystal displays, organic photovoltaic cells, organic light-emitting diodes and other fields. The unique two-dimensional structure of graphene makes it have bright application...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 刘忠范戴博雅付磊
Owner PEKING UNIV
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